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Philosophical Magazine B Volume 40, 1979 - Issue 1
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Original Articles

The interpretation of capacitance and conductance measurements on metal-amorphous silicon barriers

A. J. Snell Carnegie Laboratory of Physics, University of Dundee, Dundee, DD1 4HN, Scotland
,
K. D. Mackenzie Carnegie Laboratory of Physics, University of Dundee, Dundee, DD1 4HN, Scotland
,
P. G. Le Comber Carnegie Laboratory of Physics, University of Dundee, Dundee, DD1 4HN, Scotland
&
W. E. Spear Carnegie Laboratory of Physics, University of Dundee, Dundee, DD1 4HN, Scotland
Pages 1-15 | Received 05 Mar 1979, Accepted 22 Apr 1979, Published online: 20 Aug 2006

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Peter Hugger, J. David Cohen, Baojie Yan, Jeffrey Yang & Subhendu Guha. (2009) Insights and challenges toward understanding the electronic properties of hydrogenated nanocrystalline silicon. Philosophical Magazine 89:28-30, pages 2541-2555.
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P. C. SRIVASTAVA & U. P. SINGH. (1990) Study of extrinsic interface states at the Al/Si interface from capacitance-voltage characteristics. International Journal of Electronics 68:1, pages 69-73.
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D.R. Bapat, K.L. Narasimhan & Ravi Kuchibhotla. (1987) The temperature dependence of the barrier height in amorphous-silicon Schottky barriers. Philosophical Magazine B 56:1, pages 71-78.
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I.W. Archibald & R.A. Abram. (1986) More theory of the admittance of an amorphous silicon Schottky barrier. Philosophical Magazine B 54:5, pages 421-438.
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J.P. V. Drazin & J.C. Anderson. (1986) Photoadmittance in amorphous-silicon Schottky diodes. Philosophical Magazine B 54:1, pages 19-36.
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K.D. Mackenzie, P.G. Le Comber & W.E. Spear. (1982) The density of states in amorphous silicon determined by space-charge-limited current measurements. Philosophical Magazine B 46:4, pages 377-389.
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R.A. Abram & P.J. Doherty. (1982) A theory of capacitance-voltage measurements on amorphous silicon Schottky barriers. Philosophical Magazine B 45:2, pages 167-176.
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A.J. Snell, W.E. Spear & P.G. Le Comber. (1981) The lifetime of injected carriers in amorphous silicon p–n junctions. Philosophical Magazine B 43:3, pages 407-417.
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NancyB. Goodman & H. Fritzsche. (1980) Analysis of field-effect and capacitance–voltage measurements in amorphous semiconductors. Philosophical Magazine B 42:1, pages 149-165.
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Articles from other publishers (38)

O. Dhibi, A. Ltaief, N. Chaaben & A. Bouazizi. (2014) Effect of thin gold interlayer on the electrical and dielectrical behaviors of ITO/MEH-PPV/Al structures. Microelectronic Engineering 129, pages 24-30.
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R. Darwich & P. Roca i Cabarrocas. (2011) Characterization of defects in hydrogenated amorphous silicon deposited on different substrates by capacitance techniques. Thin Solid Films 519:16, pages 5473-5480.
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R. Darwich & P. Roca i Cabarrocas. (2011) High deposition rate hydrogenated polymorphous silicon characterized by different capacitance techniques. Thin Solid Films 519:16, pages 5364-5370.
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S. Paul. (2006) Determination of Density of States in Amorphous Carbon. IEEE Transactions on Electron Devices 53:8, pages 1775-1781.
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J. Drechsel, B. Männig, D. Gebeyehu, M. Pfeiffer, K. Leo & H. Hoppe. (2004) MIP-type organic solar cells incorporating phthalocyanine/fullerene mixed layers and doped wide-gap transport layers. Organic Electronics 5:4, pages 175-186.
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Steven S. Hegedus & William N. Shafarman. (2004) Thin-film solar cells: device measurements and analysis. Progress in Photovoltaics: Research and Applications 12:23, pages 155-176.
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D. Mencaraglia, S. Ould Saad & Z. Djebbour. (2003) Admittance spectroscopy for non-crystalline thin film devices characterization: comparison of Cu(In,Ga)Se2 and a-Si:H cases. Thin Solid Films 431-432, pages 135-142.
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J Drechsel, M Pfeiffer, X Zhou, A Nollau & K Leo. (2002) Organic Mip-diodes by p-doping of amorphous wide-gap semiconductors: CV and impedance spectroscopy. Synthetic Metals 127:1-3, pages 201-205.
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. 2000. Ternary Compounds, Organic Semiconductors. Ternary Compounds, Organic Semiconductors 1 2 .
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A. M. Rodrigues, H. L. Gomes, J. A. Rees, L. Pereira & E. Pereira. (1999) Interface Properties and Capacitance–Voltage Behaviour of Diamond Devices Prepared by Microwave-Assisted CVD. physica status solidi (a) 174:1, pages 165-170.
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H.M. Gupta. (1995) Theory of non-steady-state electrical characteristics of metal-insulator-metal structures with Schottky barriers and uniformly distributed interface impurity states. Solid-State Electronics 38:3, pages 619-625.
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E. Punkka & M.F. Rubner. (1992) Electrical characterization of Langmuir-Blodgett films of poly(3-hexylthiophene) by utilizing rectifying contacts. Thin Solid Films 213:1, pages 117-125.
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H M Gupta. (1992) Theory of electrical characteristics of a Schottky barrier having exponentially distributed impurity states and metal-insulator-metal structures. Journal of Physics: Condensed Matter 4:13, pages 3507-3515.
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S.S. Hegedus & E.A. Fagen. (1992) Characterization of a-Si:H and a-SiGe:H p-i-n and Schottky junctions by admittance circuit modeling. IEEE Transactions on Electron Devices 39:10, pages 2368-2376.
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W.E. Spear & S.H. Baker. (1989) Electronic properties of metal—amorphous silicon barriers and junctions. Electrochimica Acta 34:12, pages 1691-1697.
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I. Balberg. (2011) A Study of the State Distribution in Various a-Si:H Materials by a New Capacitance Method. MRS Proceedings 95.
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C. Pickup, R. W. Cochrane, J. L. Brebner & G. Perluzzo. (2011) Application of a Low Frequency Technique to the Study of Amorphous Materials.. MRS Proceedings 95.
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W. B. Jackson, R. J. Nemanich, M. J. Thompson & B. Wacker. (1986) Schottky barriers on phosphorus-doped hydrogenated amorphous silicon: The effects of tunneling. Physical Review B 33:10, pages 6936-6945.
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J. D. Cohen & D. V. Lang. 1985. Tetrahedrally-Bonded Amorphous Semiconductors. Tetrahedrally-Bonded Amorphous Semiconductors 299 314 .
I. Sakata, M. Yamanaka, Y. Mori & Y. Hayashi. (1984) Optical and electrical properties of hydrogenated amorphous silicon prepared by glow discharge decomposition of disilane. Solar Energy Materials 10:2, pages 121-138.
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R.J. Nemanich. 1984. Hydrogenated Amorphous Silicon - Electronic and Transport Properties. Hydrogenated Amorphous Silicon - Electronic and Transport Properties 375 406 .
J. David Cohen. 1984. Hydrogenated Amorphous Silicon - Electronic and Transport Properties. Hydrogenated Amorphous Silicon - Electronic and Transport Properties 9 98 .
R. J. Nemanich & M. J. Thompson. 1984. Metal-Semiconductor Schottky Barrier Junctions and Their Applications. Metal-Semiconductor Schottky Barrier Junctions and Their Applications 335 366 .
T. Tiedje. 1984. The Physics of Hydrogenated Amorphous Silicon II. The Physics of Hydrogenated Amorphous Silicon II 261 300 .
R. A. Street & D. K. Biegelsen. 1984. The Physics of Hydrogenated Amorphous Silicon II. The Physics of Hydrogenated Amorphous Silicon II 195 259 .
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H.L. Fernandez-Canque, M.C. Abdulrida & J. Allison. (1983) Comparative methods for the determination of the gap state density in magnetron-sputtered hydrogenated amorphous silicon. Thin Solid Films 110:3, pages 241-250.
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Tohru Suzuki, Yukio Osaka & Masataka Hirose. (1983) Theoretical Interpretation of Capacitance-Voltage Characteristics of Metal-a-Si:H Schottky Barriers. Japanese Journal of Applied Physics 22:5R, pages 785.
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KH Levin, R Weil, M Janai & B Pratt. (1983) The effect of an oxide layer on the ohmicity of contacts to amorphous silicon. Vacuum 33:4, pages 235-236.
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H. Pfleiderer & B. Rauscher. (1983) Capacitance of amorphous silicon pin solar cells. Physica Status Solidi (a) 75:2, pages 537-545.
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Isao Sakata, Yutaka Hayashi, Mitsuyuki Yamanaka & Hideyuki Karasawa. (1982) Photo-induced effects in hydrogenated amorphous silicon P-I-N diodes. Solid-State Electronics 25:10, pages 1059-1062.
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W.W. Anderson. (1982) Dielectric relaxation contribution to dispersion of junction admittance. Solid-State Electronics 25:10, pages 1033-1044.
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J. David Cohen & David V. Lang. (1982) Calculation of the dynamic response of Schottky barriers with a continuous distribution of gap states. Physical Review B 25:8, pages 5321-5350.
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W.E. Spear, P.G. Le Comber, A.J. Snell & R.A. Gibson. (1982) Recent applied developments in the amorphous silicon field. Thin Solid Films 90:4, pages 359-370.
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M. K. Han, P. Sung, R. Lahri & W. A. Anderson. 1982. Fourth E.C. Photovoltaic Solar Energy Conference. Fourth E.C. Photovoltaic Solar Energy Conference 759 763 .
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