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Original Articles

Hole carrier transport in amorphous silicon films

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Pages 71-86 | Received 07 Mar 1979, Accepted 22 Apr 1979, Published online: 20 Aug 2006

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Read on this site (10)

P.A. Bayley & J.M. Marshall. (1996) Transient photoconductivity in a-Si1− C :H thin films. Philosophical Magazine B 73:3, pages 429-444.
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A.K. Browne, J.M. Marshall, D.M. Goldie & A.R. Hepburn. (1994) Transport properties of glow-discharge amorphous silicon grown under different deposition conditions. Philosophical Magazine B 69:2, pages 349-358.
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G. Seynhaeve, G.J. Adriaenssens, H. Michiel & H. Overhof. (1988) Analysis of time-of-flight transit times based on the multiple-trapping model of charge-carrier transport. Philosophical Magazine B 58:4, pages 421-432.
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J.M. Marshall, R.A. Street, M.J. Thompson & W.B. Jackson. (1988) Hole carrier drift-mobility measurements in a-Si: H, and the shape of the valence-band tail. Philosophical Magazine B 57:3, pages 387-397.
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J.M. Marshall, J. Berkin & C. Main. (1987) Calculation of localized-state energy distributions from transient-photoresponse data. Philosophical Magazine B 56:5, pages 641-652.
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J.M. Marshall, R.A. Street & M.J. Thompson. (1986) Electron drift mobility in amorphous Si: H. Philosophical Magazine B 54:1, pages 51-60.
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J. M. Marshall & C. Main. (1983) Transient photoconductivity and thermalization in amorphous semiconductors. Philosophical Magazine B 47:5, pages 471-480.
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J.C. Anderson. (1982) Theory of photo-capacitance in amorphous silicon MIS structures. Philosophical Magazine B 46:2, pages 151-161.
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P.N. Butcher & J.D. Clark. (1981) The theory of anomalous carrier pulse propagation in amorphous semiconductors. Philosophical Magazine B 43:6, pages 1029-1037.
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Articles from other publishers (13)

Safa O. Kasap. 2022. Photoconductivity and Photoconductive Materials. Photoconductivity and Photoconductive Materials 179 251 .
Wen Chao Chen, Louis-André Hamel & Arthur Yelon. (1997) Monte Carlo simulations of Meyer-Neldel effect on carrier time-of-flight in a-Si:H. Journal of Non-Crystalline Solids 220:2-3, pages 254-260.
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Wen Chao Chen & Louis-André hamel. (2011) Monte Carlo Simulation of Transient Currents in a-Si:H. MRS Proceedings 420.
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C. E. Nebel, R. A. Street, N. M. Johnson & J. Kocka. (1992) High-electric-field transport in a -Si:H. I. Transient photoconductivity . Physical Review B 46:11, pages 6789-6802.
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J.M. Marshall, C. Pickup, A. Browne, J. McNeil, C. Hotham, C. Main & J. Berkin. (1989) Band tail states in a-Si:H — influence of preparation conditions and techniques for characterisation. Journal of Non-Crystalline Solids 114, pages 339-341.
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Toshio Nishida & Yasushi Hoshino. (1986) Space‐charge effect on hole transport in resistive hydrogenated amorphous silicon. Journal of Applied Physics 59:7, pages 2467-2470.
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J. M. Marshal & R. P. Barclay. 1985. Physics of Disordered Materials. Physics of Disordered Materials 567 577 .
J.M. Marshall, R.A. Street & M.J. Thompson. (1984) Time-of-flight studies of compensated a-Si:H. Journal of Non-Crystalline Solids 66:1-2, pages 175-180.
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J.M. Marshall & R.A. Street. (1984) On the sensitivity of transient photodecay measurements as a probe of localised state distributions in amorphous semiconductors. Solid State Communications 50:2, pages 91-95.
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W.E. Spear. (1983) The study of transport and related properties of amorphous silicon by transient experiments. Journal of Non-Crystalline Solids 59-60, pages 1-13.
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J M Marshall. (1983) Carrier diffusion in amorphous semiconductors. Reports on Progress in Physics 46:10, pages 1235-1282.
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R Hrach & H Biederman. (1981) The Monte Carlo method in physical electronics and thin film physics. Vacuum 31:1, pages 39-50.
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John D. Joannopoulos & Douglas C. Allan. 1981. Festkörperprobleme 21. Festkörperprobleme 21 167 190 .

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