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Philosophical Magazine B Volume 71, 1995 - Issue 5
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Original Articles

Bonding structure and defects in wide band gap a-Si1−xCx:H films deposited in Hz diluted SiH4 + CH4 gas mixtures

F. Demichelis Dipartimento di Fisica, Politecnico di Torino, Corso Duca degli Abruzzi, 24-10129, Torino, Italy
,
F. Giorgis Dipartimento di Fisica, Politecnico di Torino, Corso Duca degli Abruzzi, 24-10129, Torino, Italy
,
C. F. Pirri Dipartimento di Fisica, Politecnico di Torino, Corso Duca degli Abruzzi, 24-10129, Torino, Italy
&
E. Tresso Dipartimento di Fisica, Politecnico di Torino, Corso Duca degli Abruzzi, 24-10129, Torino, Italy
Pages 1015-1033 | Received 02 Aug 1994, Accepted 30 Aug 1994, Published online: 27 Sep 2006

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F. Demichelis, F. Giorgis, C.F. Pirri & E. Tresso. (1995) Compositional and structural properties of hydrogenated amorphous silicon-carbon films prepared by ultra-high-vacuum plasma-enhanced chemical vapour deposition with different carbon sources. Philosophical Magazine A 72:4, pages 913-929.
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Articles from other publishers (28)

Vijaya Rangari & James Davis. 2021. Composite Materials. Composite Materials.
Mingming Li, Lihua Jiang, Yu Peng, Tao Wang, Ting Xiao, Peng Xiang & Xinyu Tan. (2019) The evolution of PL properties of hydrogenated Si-rich silicon carbide/amorphous carbon nano-multilayer films grown by PECVD. Optik 176, pages 401-409.
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Jinghuang Lin, Jin Ba, Yulin Liu, Yiheng Wang, Jiale Guo, Dalin Luo, Yifei Cai, Deshun Mao, Junlei Qi & Jicai Feng. (2017) Interfacial microstructure and improved wetting mechanism of SiO 2f /SiO 2 brazed with Nb by plasma treatment. Vacuum 143, pages 320-328.
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Tuan Anh Cao, Truc Quynh Ngan Luong & Tran Cao Dao. (2016) Green synthesis of a carbon-rich layer on the surface of SiC at room temperature by anodic etching in dilute hydrofluoric acid/ethylene glycol solution. Green Processing and Synthesis 5:5, pages 491-498.
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A. Vasin. (2015) Photoluminescent properties of oxidized stochiometric and carbon-rich amorphous Si1-xCx:H films. Semiconductor physics, quantum electronics and optoelectronics 18:1, pages 63-70.
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Hao Tian, Hai-tao Liu & Hai-feng Cheng. (2013) Effects of SiC contents on the dielectric properties of SiO2f/SiO2 composites fabricated through a sol-gel process. Powder Technology 239, pages 374-380.
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Shui-Yang Lien, Ko-Wei Weng, Jung-Jie Huang, Chia-Hsun Hsu, Chau-Te Shen, Chao-Chun Wang, Yang-Shih Lin, Dong-Sing Wuu & Der-Chin Wu. (2011) Influence of CH4 flow rate on properties of HF-PECVD a-SiC films and solar cell application. Current Applied Physics 11:1, pages S21-S24.
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S. Guruvenket, M. Azzi, D. Li, J.A. Szpunar, L. Martinu & J.E. Klemberg-Sapieha. (2010) Structural, mechanical, tribological, and corrosion properties of a-SiC:H coatings prepared by PECVD. Surface and Coatings Technology 204:21-22, pages 3358-3365.
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Christian Ehling, Dorian Treptow, Gerhard Bilger, Florian Einsele & Markus B. Schubert. (2010) Electronic surface passivation of crystalline silicon solar cells by a-SiC:H. Electronic surface passivation of crystalline silicon solar cells by a-SiC:H.
H. Dibaji, M.M. Larijani, A. Novinrooz, M. Salehkootahi, R. Afzalzadeh & Sh. Noroozian. (2009) The effect of methane dose and post annealing treatment on the formation of nano β-SiC buried layer in the silicon. Surface and Coatings Technology 203:17-18, pages 2514-2520.
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Matthias Kuenle, Stefan Janz, Oliver Eibl, Christoph Berthold, Volker Presser & Klaus-Georg Nickel. (2009) Thermal annealing of SiC thin films with varying stoichiometry. Materials Science and Engineering: B 159-160, pages 355-360.
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B. Garcia & M. Estrada. (2006) Influence of Deposition Conditions of a-Si1-xCx on Film Composition Before and After Excimer Laser Annealing. Influence of Deposition Conditions of a-Si1-xCx on Film Composition Before and After Excimer Laser Annealing.
Bibhu P. Swain. (2006) The analysis of carbon bonding environment in HWCVD deposited a-SiC:H films by XPS and Raman spectroscopy. Surface and Coatings Technology 201:3-4, pages 1589-1593.
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S. Janz, S. Reber, F. Lutz & C. Schetter. (2006) Conductive SiC as an intermediate layer for CSITF solar cells. Thin Solid Films 511-512, pages 271-274.
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A.R. Oliveira & M.N.P. Carreño. (2006) Post thermal annealing crystallization and reactive ion etching of SiC films produced by PECVD. Journal of Non-Crystalline Solids 352:9-20, pages 1392-1397.
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B. García, M. Estrada, K.F. Albertin, M.N.P. Carreño, I. Pereyra & L. Resendiz. (2006) Amorphous and excimer laser annealed SiC films for TFT fabrication. Solid-State Electronics 50:2, pages 241-247.
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B. Racine, A. C. Ferrari, N. A. Morrison, I. Hutchings, W. I. Milne & J. Robertson. (2001) Properties of amorphous carbon–silicon alloys deposited by a high plasma density source. Journal of Applied Physics 90:10, pages 5002-5012.
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J. Cui, Rusli, S. F. Yoon, M. B. Yu, K. Chew, J. Ahn, Q. Zhang, E. J. Teo, T. Osipowicz & F. Watt. (2001) Effects of microwave power on the structural and emission properties of hydrogenated amorphous silicon carbide deposited by electron cyclotron resonance chemical vapor deposition. Journal of Applied Physics 89:5, pages 2699-2705.
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Minseo Park, C. W. Teng, V. Sakhrani, M. B. McLaurin, R. M. Kolbas, R. C. Sanwald, R. J. Nemanich, J. J. Hren & J. J. Cuomo. (2001) Optical characterization of wide band gap amorphous semiconductors (a-Si:C:H): Effect of hydrogen dilution. Journal of Applied Physics 89:2, pages 1130-1137.
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J. P. Conde, V. Chu, M. F. da Silva, A. Kling, Z. Dai, J. C. Soares, S. Arekat, A. Fedorov, M. N. Berberan-Santos, F. Giorgis & C. F. Pirri. (1999) Optoelectronic and structural properties of amorphous silicon–carbon alloys deposited by low-power electron-cyclotron resonance plasma-enhanced chemical-vapor deposition. Journal of Applied Physics 85:6, pages 3327-3338.
Crossref
S.M. Iftiquar & A.K. Barua. (1999) Control of the properties of wide bandgap a-SiC:H films prepared by RF PECVD method by varying methane flow rate. Solar Energy Materials and Solar Cells 56:2, pages 117-123.
Crossref
Shu-Ya Lin & S.T. Chang. (1998) VARIATIONS OF VIBRATIONAL LOCAL MODES AND ELECTRONIC STATES OF HYDROGENATED AMORPHOUS SILICON CARBIDE UNDER THERMAL ANNEALING. Journal of Physics and Chemistry of Solids 59:9, pages 1399-1405.
Crossref
Y Suzaki, T Shikama, S Yoshioka, K Yoshii & K Yasutake. (1997) Concentration and thermal release of hydrogen in amorphous silicon carbide films prepared by rf sputtering. Thin Solid Films 311:1-2, pages 207-211.
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F. Giorgis, C.F. Pirri, E. Tresso, V. Rigato, S. Zandolin & P. Rava. (1997) Wide band gap amorphous silicon-based alloys. Physica B: Condensed Matter 229:3-4, pages 233-239.
Crossref
P. Rava, G. Crovini, F. Demichelis, F. Giorgis & C. F. Pirri. (1996) Characterization of the effect of growth conditions on a -SiC:H films . Journal of Applied Physics 80:7, pages 4116-4123.
Crossref
Shu-Ya Lin. (1996) Vibrational local modes of a -Si1− x C x :H alloys and variation of local modes in different local environments . Journal of Applied Physics 80:3, pages 1399-1404.
Crossref
F. Demichelis, G. Crovini, F. Giorgis, C. F. Pirri & E. Tresso. (1996) Hydrogenated amorphous silicon-nitrogen alloys, a -SiN x :H y : a wide band gap material for optoelectronic devices . Journal of Applied Physics 79:3, pages 1730-1735.
Crossref
S. Wickramanayaka, K. Kitamura, Y. Nakanishi & Y. Hatanaka. (2011) Melting Evaporation and Recrystallization of A-Sic:H Films by Excimer Laser. MRS Proceedings 397.
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