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Philosophical Magazine Letters Volume 93, 2013 - Issue 9
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Articles

Characterization of Al/n-ZnO/p-Si/Al structure with low-cost solution-grown ZnO layer

S. Çetinkaya Department of Physics, Mustafa Kemal University, 31034, Hatay, TurkeyCorrespondence[email protected]
,
H.A. Çetinkara Department of Physics, Mustafa Kemal University, 31034, Hatay, Turkey
,
S. Kahraman Department of Physics, Mustafa Kemal University, 31034, Hatay, Turkey
&
F. Bayansal Department of Physics, Mustafa Kemal University, 31034, Hatay, Turkey
Pages 550-559 | Received 12 Feb 2013, Accepted 10 Jun 2013, Published online: 30 Jul 2013

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İbrahim Hüdai Taşdemir, Özkan Vural & İlbilge Dökme. (2016) Electrical characteristics of p-Si/TiO2/Al and p-Si/TiO2-Zr/Al Schottky devices. Philosophical Magazine 96:16, pages 1684-1693.
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Articles from other publishers (2)

Gülçin ERSÖZ DEMİR. (2021) Au/p-Si, Au/PVA/p-Si ve Au/PVA:Gr/p-Si Schottky Bariyer Diyotların Üretimi ve Temel Elektriksel Özelliklerinin İncelenmesiThe Fabrication of Au/p-Si, Au/PVA/p-Si and Au/PVA:Gr/p-Si Schottky Barrier Diodes and The Investigation of Their Basic Electrical Properties. Iğdır Üniversitesi Fen Bilimleri Enstitüsü Dergisi 11:1, pages 157-168.
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T. Küçükömeroğlu, S. Yılmaz, İ. Polat & E. Bacaksız. (2018) An evaluation of structural, optical and electrical characteristics of Ag/ZnO rods/SnO2/In–Ga Schottky diode. Journal of Materials Science: Materials in Electronics 29:12, pages 10054-10060.
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