Electrical characteristics of p-Si/TiO₂/Al and p-Si/TiO₂-Zr/Al Schottky devices

Abstract

Electrical devices involve different types of diode in prospective electronics is of great importance. In this study, p-type Si surface was covered with thin film of TiO₂ dispersion in H₂O to construct p-Si/TiO₂/Al Schottky barrier diode (D1) and the other one with TiO₂ dispersion doped with zirconium to construct p-Si/TiO₂-Zr/Al diode (D2) by drop-casting method in the same conditions. Electrical properties of as-prepared diodes and effect of zirconium as a dopant were investigated. Current–voltage (I–V) characteristics of these devices were measured at ambient conditions. Some parameters including ideality factor (n), barrier height (Φ_B0), series resistance (Rs) and interface state density (Nss) were calculated from I–V behaviours of diodes. Structural comparisons were based on SEM and EDX measurements. Experimental results indicated that electrical parameters of p-Si/TiO₂/Al Schottky device were influenced by the zirconium dopant in TiO₂.

Keywords:

• p-Si/TiO₂-Zr/Al structure
• I–V characteristic
• interface states
• series resistance