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Radiation Effects and Defects in Solids
Incorporating Plasma Science and Plasma Technology
Volume 171, 2016 - Issue 3-4
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Articles

Optical and electron beam studies of gamma-irradiated AlGaN/GaN high-electron-mobility transistors

Anupama YadavDepartment of Physics, University of Central Florida, Orlando32816, FL, USAView further author information
,
Cameron GlasscockDepartment of Physics, University of Central Florida, Orlando32816, FL, USAView further author information
,
Elena FlitsiyanDepartment of Physics, University of Central Florida, Orlando32816, FL, USACorrespondence[email protected]
View further author information
,
Leonid ChernyakDepartment of Physics, University of Central Florida, Orlando32816, FL, USAView further author information
,
Igor LubomirskyDepartment of Materials and Interfaces, Weizmann Institute of Science, Rehovot76100, IsraelView further author information
,
Sergey KhodorovDepartment of Materials and Interfaces, Weizmann Institute of Science, Rehovot76100, IsraelView further author information
,
Joseph SalzmanDepartment of Electrical Engineering, Israel Institute of Technology, Haifa3200003, IsraelView further author information
,
Boris MeylerDepartment of Electrical Engineering, Israel Institute of Technology, Haifa3200003, IsraelView further author information
,
Carlo CoppolaNordion, LavalH7V 3S8, CanadaView further author information
,
Sebestian GuayNordion, LavalH7V 3S8, CanadaView further author information
&
Jasques BoivinNordion, LavalH7V 3S8, CanadaView further author information
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Pages 223-230 | Received 04 Feb 2016, Accepted 04 Mar 2016, Published online: 11 May 2016

Citations (5)

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Read on this site (1)

Jonathan Lee, Anupama Yadav, Michael Antia, Valentina Zaffino, Elena Flitsiyan, Leonid Chernyak, Joseph Salzman, Boris Meyler, Shihyun Ahn, Fan Ren & Stephen J. Pearton. (2017) Low dose 60Co gamma-irradiation effects on electronic carrier transport and DC characteristics of AlGaN/GaN high-electron-mobility transistors. Radiation Effects and Defects in Solids 172:3-4, pages 250-256.
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Articles from other publishers (4)

Shijie Pan, Shiwei Feng, Xuan Li, Xiang Zheng, Xiaozhuang Lu, Chaoxu Hu, Xin He, Kun Bai, Lixing Zhou & Yamin Zhang. (2021) Effects of gamma irradiation on GaN high-electron-mobility transistors characterized by the voltage-transient method. Semiconductor Science and Technology 36:9, pages 095011.
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S. J. Pearton, Aman Haque, Ani Khachatrian, Adrian Ildefonso, Leonid Chernyak & Fan Ren. (2021) Review—Opportunities in Single Event Effects in Radiation-Exposed SiC and GaN Power Electronics. ECS Journal of Solid State Science and Technology 10:7, pages 075004.
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S. Pradeep, R. Loganathan, S. Surender, K. Prabakaran, K. Asokan & K. Baskar. (2018) Effect of gamma irradiation on AlInGaN/AlN/GaN heterostructures grown by MOCVD. Superlattices and Microstructures 120, pages 40-47.
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Jonathan Lee, Elena Flitsiyan, Leonid Chernyak, Joseph Salzman & Boris Meyler. (2017) Effects of Gamma Irradiation on AlGaN-Based High Electron Mobility Transistors. ECS Journal of Solid State Science and Technology 6:11, pages S3063-S3066.
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