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Radiation Effects and Defects in Solids
Incorporating Plasma Science and Plasma Technology
Volume 171, 2016 - Issue 3-4
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Articles

Optical and electron beam studies of gamma-irradiated AlGaN/GaN high-electron-mobility transistors

Anupama YadavDepartment of Physics, University of Central Florida, Orlando32816, FL, USAView further author information
,
Cameron GlasscockDepartment of Physics, University of Central Florida, Orlando32816, FL, USAView further author information
,
Elena FlitsiyanDepartment of Physics, University of Central Florida, Orlando32816, FL, USACorrespondence[email protected]
View further author information
,
Leonid ChernyakDepartment of Physics, University of Central Florida, Orlando32816, FL, USAView further author information
,
Igor LubomirskyDepartment of Materials and Interfaces, Weizmann Institute of Science, Rehovot76100, IsraelView further author information
,
Sergey KhodorovDepartment of Materials and Interfaces, Weizmann Institute of Science, Rehovot76100, IsraelView further author information
,
Joseph SalzmanDepartment of Electrical Engineering, Israel Institute of Technology, Haifa3200003, IsraelView further author information
,
Boris MeylerDepartment of Electrical Engineering, Israel Institute of Technology, Haifa3200003, IsraelView further author information
,
Carlo CoppolaNordion, LavalH7V 3S8, CanadaView further author information
,
Sebestian GuayNordion, LavalH7V 3S8, CanadaView further author information
&
Jasques BoivinNordion, LavalH7V 3S8, CanadaView further author information
 show all
Pages 223-230 | Received 04 Feb 2016, Accepted 04 Mar 2016, Published online: 11 May 2016

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