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Radiation Effects and Defects in Solids
Incorporating Plasma Science and Plasma Technology
Volume 108, 1989 - Issue 1
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Original Articles

Lithium implantation profiles in metals and semiconductors

D. Fink Hahn-Meitner-Institut, Dept. P-AF, P.O. Box 390128, D-1000, Berlin, 39, Germany
,
Tjan Kie Hahn-Meitner-Institut, Dept. P-AF, P.O. Box 390128, D-1000, Berlin, 39, Germany
,
J. P. Biersack Hahn-Meitner-Institut, Dept. P-AF, P.O. Box 390128, D-1000, Berlin, 39, Germany
,
Wang Lihong Hahn-Meitner-Institut, Dept. P-AF, P.O. Box 390128, D-1000, Berlin, 39, Germany
&
Ma Yunru Academia Sinica, Department of High Technology, Beijing, China
Pages 27-44 | Received 10 Mar 1988, Published online: 19 Aug 2006

Citations (13)

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Read on this site (4)

D. Fink, J. Krauser, D. Nagengast, M. Behar, J. Kaschny, P. Grande, V. Hnatowicz, J. Vacik & L. Palmetshofer. (1996) Ion Implantation into Fullerene. Fullerene Science and Technology 4:3, pages 535-552.
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A. Hammoudi & D. Fink. (1994) The influence of the surface on range profile parameters. Radiation Effects and Defects in Solids 132:3, pages 203-210.
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D. Fink, L. Wang, J.P. Biersack & F. Jahnel. (1990) 30 keV to 2 MeV Boron implantation profiles in solids. Radiation Effects and Defects in Solids 115:1-3, pages 93-112.
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D. Fink, K. Tjan & L. Wang. (1990) On the thermal mobility of lithium in metals and semiconductors. Radiation Effects and Defects in Solids 114:1-2, pages 21-50.
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Articles from other publishers (9)

Erwin Hüger, Jochen Stahn, Paul Heitjans & Harald Schmidt. (2019) Neutron reflectometry to measure in situ the rate determining step of lithium ion transport through thin silicon layers and interfaces . Physical Chemistry Chemical Physics 21:30, pages 16444-16450.
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Erwin Hüger & Harald Schmidt. (2018) Lithium Permeability Increase in Nanosized Amorphous Silicon Layers. The Journal of Physical Chemistry C 122:50, pages 28528-28536.
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Erwin Hüger, Lars Dörrer & Harald Schmidt. (2018) Permeation, Solubility, Diffusion and Segregation of Lithium in Amorphous Silicon Layers. Chemistry of Materials 30:10, pages 3254-3264.
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T.R. Yang, G. Kuri & D. Fink. (2000) Depth profiles of MeV C+ and C2+ ions implanted in III–V semiconductors. Materials Science and Engineering: B 68:3, pages 143-148.
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U. Wahl, S.G. Jahn, M. Restle, C. Ronning, H. Quintel, K. Bharuth-Ram & H. Hofsäss. (1996) Alpha-emission channeling investigations of the lattice location of Li in Ge. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 118:1-4, pages 76-81.
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K. Arstila, J. Keinonen & P. Tikkanen. (1995) Stopping power for low-velocity heavy ions: (0.01-0.9) MeV/nucleon Si ions in 18 (Z = 13–79) metals. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 101:4, pages 321-326.
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L. Wang, K. Tjan, D. Fink, P. Goppelt, M. Briére & J.P. Biersack. (1992) 20 keV—40 MeV lithium implantation profiles in aluminium. Surface and Coatings Technology 51:1-3, pages 372-378.
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J. Keinonen, K. Arstila & P. Tikkanen. (1992) Electronic stopping power of Si and Ge for MeV-energy Si and P ions. Applied Physics Letters 60:2, pages 228-230.
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K. Arstila, J. Keinonen, P. Tikkanen & A. Kuronen. (1991) Stopping power for low-velocity Mg ions in Si, Ge, and GaAs. Physical Review B 43:17, pages 13967-13970.
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