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Radiation Effects and Defects in Solids
Incorporating Plasma Science and Plasma Technology
Volume 132, 1994 - Issue 4
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Section B: Crystal lattice defects and amorphous materials

Diode parameter determination as applied to mosfets for radiation effects characterization

M. Bendada Centre d'Etudes Fondamentales, Université de Perpignan, 66860, Perpignan Cedex, France
,
P. Mialhe Centre d'Etudes Fondamentales, Université de Perpignan, 66860, Perpignan Cedex, France
&
J. P. Charles Centre Lorrain d'Optique et Electronique des Splides, Supélec, 57078, Metz Cedex, 3, France
Pages 355-360 | Received 21 Jun 1994, Published online: 19 Aug 2006

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E. Bendada, K. Raïs & P. Mialhe. (1998) Characterization of annealing of Co-60 gamma-ray damage in N-channel power MOSFETs. Radiation Effects and Defects in Solids 143:3, pages 247-254.
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E. Bendada, M. De La Bardonnie, P. Mialhe & J.-P. Charles. (1996) Diode ideality factor for MOSFETs characterization of dose effect. Radiation Effects and Defects in Solids 138:1-2, pages 39-48.
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Articles from other publishers (1)

Elmaati Bendada, Abdessamad Malaoui, Mustapha Mabrouki, Kamal Quotb & Khalid Rais. (2009) Annealing of Irradiated-Induced defects in power MOSFETs. Annealing of Irradiated-Induced defects in power MOSFETs.

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