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Integrated Ferroelectrics
An International Journal
Volume 33, 2001 - Issue 1-4
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Original Articles

Physical insights on imprint and application to functional memory with ferroelectric materials

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Pages 261-270 | Received 15 Mar 2000, Published online: 19 Aug 2006

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Hiroaki Watanabe, Naoki Fujita & Hiroshi Nozawa. (2012) Improvement and Evaluation of Sorting Algorithm with FeRAM-Based Functional Memory. Integrated Ferroelectrics 132:1, pages 122-129.
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Hiroshi Nozawa. (2011) New Method for Search and Sort with Bit-Serial and Word-Parallel Type of Functional Memory. Integrated Ferroelectrics 124:1, pages 167-169.
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Shinzo Koyama, Masao Takayama & Hiroshi Nozawa. (2001) Circuits simulation of switch devices furnished with gain cell combined to FeRAM. Integrated Ferroelectrics 40:1-5, pages 113-121.
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Articles from other publishers (1)

Yi-Shan Kuo, Shen-Yang Lee, Chia-Chin Lee, Shou-Wei Li & Tien-Sheng Chao. (2021) CMOS-Compatible Fabrication of Low-Power Ferroelectric Tunnel Junction for Neural Network Applications. IEEE Transactions on Electron Devices 68:2, pages 879-884.
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