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Integrated Ferroelectrics
An International Journal
Volume 68, 2004 - Issue 1
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Original Articles

Improvement in Reliability of 0.25 μ m 15F2 FRAM Using Novel MOCVD PZT Technology

H. J. JOO ATD Team, Memory Division, Samsung Electronics Co. Ltd., Kyungki-Do, Korea, 449-711
,
Y. J. SONG ATD Team, Memory Division, Samsung Electronics Co. Ltd., Kyungki-Do, Korea, 449-711
,
H. H. KIM ATD Team, Memory Division, Samsung Electronics Co. Ltd., Kyungki-Do, Korea, 449-711
,
S. K. KANG ATD Team, Memory Division, Samsung Electronics Co. Ltd., Kyungki-Do, Korea, 449-711
,
J. H. PARK ATD Team, Memory Division, Samsung Electronics Co. Ltd., Kyungki-Do, Korea, 449-711
,
Y. M. KANG ATD Team, Memory Division, Samsung Electronics Co. Ltd., Kyungki-Do, Korea, 449-711
,
H. S. RHIE ATD Team, Memory Division, Samsung Electronics Co. Ltd., Kyungki-Do, Korea, 449-711
,
S. Y. LEE ATD Team, Memory Division, Samsung Electronics Co. Ltd., Kyungki-Do, Korea, 449-711
&
KINAM KIM ATD Team, Memory Division, Samsung Electronics Co. Ltd., Kyungki-Do, Korea, 449-711
 show all
Pages 139-145 | Received 01 May 2004, Accepted 01 Aug 2004, Published online: 12 Aug 2010

Citations (5)

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HEUNG JIN JOO, SEUNG KUK KANG, JUNG HOON PARK, HWI SAN KIM, JAI-HYUN KIM, JU YOUNG JUNG, DO YEON CHOI, EUN SUN LEE, YOUNG MIN KANG, SUNG YUNG LEE, HONG SIK JEONG & KINAM KIM. (2007) A NOVEL ATE (ADDITIONAL TOP-ELECTRODE) SCHEME FOR A 1.6 V FRAM EMBEDDED DEVICE AT 180 NM TECHNOLOGY. Integrated Ferroelectrics 89:1, pages 106-115.
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Articles from other publishers (4)

Ashim Kumar Bain & Prem Chand. 2017. Ferroelectrics. Ferroelectrics 195 306 .
Zhiyuan Jiang, Guangping Zheng, Ke Zhan, Zhuo Han & Hao Wang. (2016) Mechanisms of polarization switching in graphene oxides and poly(vinylidene fluoride)–graphene oxide films. Japanese Journal of Applied Physics 55:4S, pages 04EP04.
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N. Setter, D. Damjanovic, L. Eng, G. Fox, S. Gevorgian, S. Hong, A. Kingon, H. Kohlstedt, N. Y. Park, G. B. Stephenson, I. Stolitchnov, A. K. Taganstev, D. V. Taylor, T. Yamada & S. Streiffer. (2006) Ferroelectric thin films: Review of materials, properties, and applications. Journal of Applied Physics 100:5.
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Dong-Chun Kim & Won-Jong Lee. (2005) Degradation of Ferroelectric Properties of Pt/PZT/Pt Capacitors in Hydrogen-containing Environment. Transactions on Electrical and Electronic Materials 6:5, pages 214-220.
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