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Integrated Ferroelectrics
An International Journal
Volume 213, 2021 - Issue 1
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Research Article

395 nm Light-Emitting Diode with 647 mW Output Power Realized Using a Double p-Type Aluminum Composition Gradient with Polarization-Induced Hole Doping

Wenkai Yuea School of Advanced Materials and Nanotechnology, Xidian University, Xi’an, China;b State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, Xidian University, Xi’an, ChinaView further author information
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Zhimin Lia School of Advanced Materials and Nanotechnology, Xidian University, Xi’an, ChinaView further author information
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Peixian Lia School of Advanced Materials and Nanotechnology, Xidian University, Xi’an, China;b State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, Xidian University, Xi’an, ChinaCorrespondence[email protected]
View further author information
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Xiaowei Zhoua School of Advanced Materials and Nanotechnology, Xidian University, Xi’an, China;b State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, Xidian University, Xi’an, ChinaView further author information
,
Haichen Donga School of Advanced Materials and Nanotechnology, Xidian University, Xi’an, ChinaView further author information
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Yanli Wanga School of Advanced Materials and Nanotechnology, Xidian University, Xi’an, China;b State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, Xidian University, Xi’an, ChinaView further author information
,
Jinxing Wua School of Advanced Materials and Nanotechnology, Xidian University, Xi’an, China;b State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, Xidian University, Xi’an, ChinaView further author information
,
Xiaoshun Luoa School of Advanced Materials and Nanotechnology, Xidian University, Xi’an, ChinaView further author information
&
Junchun Baic Jiangsu Ginjoe Semiconductor Co., Ltd., Xuzhou, ChinaView further author information
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Pages 174-181 | Received 30 Jul 2020, Accepted 01 Dec 2020, Published online: 28 Feb 2021

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Read on this site (2)

Jinxing Wu, Tielin Li, Hong Li, Hongwei Jiang & Rong Yan. (2023) Enhancing current spreading performance of GaN-based ultraviolet light-emitting diode chips through periodic doping composite barrier structures. Ferroelectrics 615:1, pages 437-444.
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Jinxing Wu, Rong Yan & Tielin Li. (2023) Research on the Performance Improvement of GaN-Based Ultraviolet Light-Emitting Diode Chips with Magnetron-Sputtered AlN Nucleation Layers. Integrated Ferroelectrics 237:1, pages 85-93.
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