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Integrated Ferroelectrics
An International Journal
Volume 10, 1995 - Issue 1-4
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Characterization and testing

The temperature dependence of ferroelectric imprint

J. M. Benedetto Army Research Laboratory, Adelphi, MD, 20783; University of Maryland, College Park, MD, 20742
,
M. L. Roush University of Maryland, College Park, MD, 20742
,
I. K. Lloyd University of Maryland, College Park, MD, 20742
,
R. Ramesh University of Maryland, College Park, MD, 20742
&
B. Rychlik Carnegie-Mellon University, Pittsburgh, PA, 15213
Pages 279-288 | Received 22 Mar 1995, Published online: 19 Aug 2006

Citations (13)

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Read on this site (4)

Y. Fujii, D. Nagasawa, H. Nozawa, K. Kobayashi & K. Tamaru. (2001) Physical insights on imprint and application to functional memory with ferroelectric materials. Integrated Ferroelectrics 33:1-4, pages 261-270.
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M. Grossmann, O. Lohse, D. Bolten, R. Waser, W. Hartner, G. Schindler, C. Dehm, N. Nagel, V. Joshi, N. Solayappan & G. Derbenwick. (1998) Imprint in ferroelectric SrBi2Ta2O9 capacitors for non-volatile memory applications. Integrated Ferroelectrics 22:1-4, pages 95-107.
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S.D. Traynor, T.D. Hadnagy & L. Kammerdiner. (1997) Capacitor test simulation of retention and imprint characteristics for ferroelectric memory operation. Integrated Ferroelectrics 16:1-4, pages 63-76.
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J.M. Benedetto. (1997) Imprint induced failure modes in ferroelectric non-volatile memories. Integrated Ferroelectrics 15:1-4, pages 29-38.
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Articles from other publishers (9)

J. Bouaziz, P. Rojo Romeo, N. Baboux & B. Vilquin. (2021) Imprint issue during retention tests for HfO2-based FRAM: An industrial challenge?. Applied Physics Letters 118:8.
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Franz Fengler, Min Hyuk Park, Tony Schenk, Milan Pešić & Uwe Schroeder. 2019. Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices. Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices 381 398 .
M. Grossmann, O. Lohse, D. Bolten, U. Boettger, R. Waser, W. Hartner, M. Kastner & G. Schindler. (2000) Lifetime estimation due to imprint failure in ferroelectric SrBi2Ta2O9 thin films. Applied Physics Letters 76:3, pages 363-365.
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Akira Furuya & Joe D. Cuchiaro. (1998) Compositional dependence of electrical characteristics of SrBi2(Ta1−xNbx)2O9 thin-film capacitors. Journal of Applied Physics 84:12, pages 6788-6794.
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Sanjeev AggarwalR. Ramesh. (1998) POINT DEFECT CHEMISTRY OF METAL OXIDE HETEROSTRUCTURES. Annual Review of Materials Science 28:1, pages 463-499.
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S. Sadashivan, S. Aggarwal, T. K. Song, R. Ramesh, J. T. EvansJr.Jr., B. A. Tuttle, W. L. Warren & D. Dimos. (1998) Evaluation of imprint in fully integrated (La,Sr)CoO3/Pb(Nb,Zr,Ti)O3/(La,Sr)CoO3 ferroelectric capacitors. Journal of Applied Physics 83:4, pages 2165-2171.
Crossref
S. Aggarwal, T. K. Song, A. M. Dhote, A. S. Prakash, R. Ramesh, N. Velasquez, L. Boyer & J. T. EvansJr.Jr.. (1998) Influence of cationic stoichiometry of La1−xSrxCoO3 electrodes on the ferroelectric properties of lead based thin film memory elements. Journal of Applied Physics 83:3, pages 1617-1624.
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Y. Shimada, K. Nakao, A. Inoue, M. Azuma, Y. Uemoto, E. Fujii & T. Otsuki. (1997) Temperature effects on charge retention characteristics of integrated SrBi2(Ta,Nb)2O9 capacitors. Applied Physics Letters 71:17, pages 2538-2540.
Crossref
R.A. Moore & J.M. Benedetto. (1995) Ionizing radiation-induced asymmetries of the retention characteristics of ferroelectric thin films. IEEE Transactions on Nuclear Science 42:6, pages 1575-1584.
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