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Integrated Ferroelectrics
An International Journal
Volume 11, 1995 - Issue 1-4
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Original Articles

Electrical properties of PZT thin films for memory application

Takashi Nakamura ROHM CO., LTD., 21, Saiin Mizosaki–cho, Ukyo–ku, Kyoto, 615, Japan
,
Yuichi Nakao ROHM CO., LTD., 21, Saiin Mizosaki–cho, Ukyo–ku, Kyoto, 615, Japan
,
Akira Kamisawa ROHM CO., LTD., 21, Saiin Mizosaki–cho, Ukyo–ku, Kyoto, 615, Japan
&
Hidemi Takasu ROHM CO., LTD., 21, Saiin Mizosaki–cho, Ukyo–ku, Kyoto, 615, Japan
Pages 161-170 | Received 24 Apr 1995, Published online: 19 Aug 2006

Citations (11)

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Read on this site (2)

S.D. Traynor, T.D. Hadnagy & L. Kammerdiner. (1997) Capacitor test simulation of retention and imprint characteristics for ferroelectric memory operation. Integrated Ferroelectrics 16:1-4, pages 63-76.
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J.M. Benedetto. (1997) Imprint induced failure modes in ferroelectric non-volatile memories. Integrated Ferroelectrics 15:1-4, pages 29-38.
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Articles from other publishers (9)

A.S. Borowiak, G. Niu, V. Pillard, G. Agnus, Ph. Lecoeur, D. Albertini, N. Baboux, B. Gautier & B. Vilquin. (2012) Pulsed laser deposition of epitaxial ferroelectric Pb(Zr,Ti)O3 films on silicon substrates. Thin Solid Films 520:14, pages 4604-4607.
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A. Roy, S. Maity, A. Dhar, D. Bhattacharya & S. K. Ray. (2009) Temperature dependent leakage current behavior of pulsed laser ablated SrBi2Ta2O9 thin films. Journal of Applied Physics 105:4.
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A. Roy, A. Dhar & S. K. Ray. (2008) Interfacial and electrical properties of SrBi2Ta2O9/ZrO2/Si heterostructures for ferroelectric memory devices. Journal of Applied Physics 104:6.
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A Roy, A Dhar, D Bhattacharya & S K Ray. (2008) Structural and electrical properties of metal–ferroelectric–insulator–semiconductor structure of Al/SrBi 2 Ta 2 O 9 /HfO 2 /Si using HfO 2 as buffer layer . Journal of Physics D: Applied Physics 41:9, pages 095408.
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Y.P. Wang, L. Zhou, X.B. Lu & Z.G. Liu. (2003) C–V characteristics of Pt/PbZr0.53Ti0.47O3/LaAlO3/Si and Pt/PbZr0.53Ti0.47O3/La0.85Sr0.15CoO3/LaAlO3/Si structures for ferroelectric gate FET memory. Applied Surface Science 205:1-4, pages 176-181.
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선환 황 & 호정 장. (2002) Characterization of (Bi,LA)Ti3O12 Ferroelectric Thin Films on Pt/Ti/SiO2/Si Substrates by sol-gel Method. Korean Journal of Materials Research 12:11, pages 835~839-835~839.
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Jong-Gul Yoon & Tae Kwon Song. 2002. Handbook of Thin Films. Handbook of Thin Films 309 367 .
Joseph Ya-min Lee & Benjamin Chihming Lai. 2002. Handbook of Thin Films. Handbook of Thin Films 1 98 .
Yong Tae Kim & Dong Suk Shin. (1997) Memory window of Pt/SrBi2Ta2O9/CeO2/SiO2/Si structure for metal ferroelectric insulator semiconductor field effect transistor. Applied Physics Letters 71:24, pages 3507-3509.
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