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Integrated Ferroelectrics
An International Journal
Volume 7, 1995 - Issue 1-4
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Original Articles

Leakage and interface engineering in titanate thin films for non-volatile ferroelectric memory and ulsi drams

X. Chen Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC, 27695–7907, U.S.A.
,
A. I. Kingon Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC, 27695–7907, U.S.A.
,
H. N. Al-Shareef Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC, 27695–7907, U.S.A.
,
K. R. Bellur Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC, 27695–7907, U.S.A.
,
K. Gifford Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC, 27695–7907, U.S.A.
&
O. Auciello Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC, 27695–7907, U.S.A.; Electronics Technology Division, MCNC, Research Triangle Park, NC, 27709
Pages 291-306 | Received 24 May 1994, Published online: 19 Aug 2006

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Harald Bachhofer, Hans Reisinger, Herbert Schroeder, Thomas Haneder, Christine Dehm, Henning Von Philipsborn & Rainer Waser. (2001) Relaxation effects and steady-state conduction in non-stoichiometric SBT films. Integrated Ferroelectrics 33:1-4, pages 245-252.
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Gernot Steinlesberger, Hans Reisinger, Harald Bachhofer, Herbert Schroeder & Wolfgang S. M. Werner. (2001) Dielectric relaxation and charge transport mechanisms in (Ba,Sr)TiO3 thin films. Integrated Ferroelectrics 38:1-4, pages 249-258.
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Su Jae Lee, Seung Eon Moon, Won Jeong Kim & Eun Kyoung Kim. (2001) Ultralow-frequency dielectric relaxation and fatigue properties of PZT thin film. Integrated Ferroelectrics 37:1-4, pages 225-234.
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Harald Bachhofer, Hans Reisinger, Gernot Steinlesberger, Herbert Schroeder, Nicolas Nagel, Thomas Mdcolajick, Hans Cerva, Henning Von Philipsborn & Rainer Waser. (2001) Interfacial layers and their effect on leakage current in mocvd-deposited SBT thin films. Integrated Ferroelectrics 39:1-4, pages 189-198.
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W.L. Warren, G.E. Pike, D. Dimos, B.A. Tuttle & H.N. Al-shareef. (1997) Charge trapping in resistance degraded ferroelectrics. Integrated Ferroelectrics 18:1-4, pages 49-61.
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Rainer Waser. (1997) Dielectric analysis of intergrated ceramic thin film capacitors. Integrated Ferroelectrics 15:1-4, pages 39-51.
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Cheol Seong Hwang, Byoung Taek Lee, Soon Oh Park, Jin Won Kim, Hag-Ju Cho, Chang Seok Kang, Hideki Horii, Sang In Lee & Moon Yong Lee. (1996) Interface potential barrier height and leakage current behavior of Pt/(Ba, Sr)TiO3/Pt capacitors fabricated by sputtering process. Integrated Ferroelectrics 13:1-3, pages 157-177.
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Articles from other publishers (20)

Prashant Singh, Rajesh Kumar Jha, Manish Goswami & B.R. Singh. (2020) Integration of perovskite Pb[Zr 0.35 Ti 0.65 ]O 3 /HfO 2 ferroelectric-dielectric composite film on Si substrate . Microelectronics International 37:3, pages 155-162.
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Hong-Hsin Huang, Moo-Chin Wang, Chung-Yuan Chen, Nan-Chung Wu & Huey-Jiuan Lin. (2006) Effect of deposition parameters on the growth rate and dielectric properties of the Ba(SnxTi1−x)O3 thin films prepared by radio frequency magnetron sputtering. Journal of the European Ceramic Society 26:15, pages 3211-3219.
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Jong-Ho Park, Chung-Sik Kim, Jong-Seng Bae, Byung-Chun Choi, Jung-Hyun Jeong, Byung Kee Moon, Hyo-Jin Seo, Ill Won Kim & Jin-Soo Kim. (2003) The effect of potential of impedance in the pulsed-laser-deposited SrBi2Ta2O9 thin film. Solid State Communications 126:11, pages 635-638.
Crossref
M. Nayak, S. Ezhilvalavan & T.Y. Tseng. 2002. Handbook of Thin Films. Handbook of Thin Films 99 167 .
Zhigang Zhang, Feng Yan, Jinsong Zhu, Chunhua Song, Xiaobin Chen & Yening Wang. (2000) Preparation and electric properties of SrBi2Ta2O9 thin films by MOD method. Thin Solid Films 375:1-2, pages 176-179.
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Feng Yan, Peng Bao, Zhigang Zhang, Jinsong Zhu, Yening Wang, Helen L.W. Chan & Chung-Loong Choy. (2000) Dielectric properties of (Ba0.5Sr0.5)TiO3 thin films. Thin Solid Films 375:1-2, pages 184-187.
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S Ezhilvalavan, Ming Shiahn Tsai, Tseung Yuen Tseng & Ming Shiahn Tsai. (2000) Dielectric relaxation and defect analysis of Ta 2 O 5 thin films . Journal of Physics D: Applied Physics 33:10, pages 1137-1142.
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F.M Pontes, E Longo, J.H Rangel, M.I Bernardi, E.R Leite & J.A Varela. (2000) Ba1−xSrxTiO3 thin films by polymeric precursor method. Materials Letters 43:5-6, pages 249-253.
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Cheol Seong Hwang, Byoung Taek Lee, Chang Seok Kang, Ki Hoon Lee, Hag-Ju Cho, Horii Hideki, Wan Don Kim, Sang In Lee & Moon Yong Lee. (1999) Depletion layer thickness and Schottky type carrier injection at the interface between Pt electrodes and (Ba, Sr)TiO3 thin films. Journal of Applied Physics 85:1, pages 287-295.
Crossref
D Mou, J Linnros, C.S Petersson & K.V Rao. (1998) Electrical properties of epitaxial PbTiO3/YBa2Cu3O7−x heterostructures. Physica C: Superconductivity 308:3-4, pages 221-225.
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Cheol Seong Hwang, Byoung Taek Lee, Chang Seok Kang, Jin Won Kim, Ki Hoon Lee, Hag-Ju Cho, Hideki Horii, Wan Don Kim, Sang In Lee, Young Bum Roh & Moon Yong Lee. (1998) A comparative study on the electrical conduction mechanisms of (Ba0.5Sr0.5)TiO3 thin films on Pt and IrO2 electrodes. Journal of Applied Physics 83:7, pages 3703-3713.
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S. Aggarwal, T. K. Song, A. M. Dhote, A. S. Prakash, R. Ramesh, N. Velasquez, L. Boyer & J. T. EvansJr.Jr.. (1998) Influence of cationic stoichiometry of La1−xSrxCoO3 electrodes on the ferroelectric properties of lead based thin film memory elements. Journal of Applied Physics 83:3, pages 1617-1624.
Crossref
Duane Dimos, William L. Warren & Husam N. Al-Shareef. 1997. Thin Film Ferroelectric Materials and Devices. Thin Film Ferroelectric Materials and Devices 199 219 .
Yukio Fukuda, Ken Numata, Katsuhiro Aoki Katsuhiro Aoki & Akitoshi Nishimura Akitoshi Nishimura. (1996) Origin of Dielectric Relaxation Observed for Ba 0.5 Sr 0.5 TiO 3 Thin-Film Capacitor . Japanese Journal of Applied Physics 35:9S, pages 5178.
Crossref
William L. Warren, Duane Dimos & Rainer M. Waser. (2013) Degradation Mechanisms in Ferroelectric and High-Permittivity Perovskites. MRS Bulletin 21:7, pages 40-45.
Crossref
M. Sedlar & M. Sayer. (1996) Study of electrical properties of rapid thermally processed lead iron niobate films synthesized by a sol gel method. Journal of Applied Physics 80:1, pages 372-375.
Crossref
Miroslav Sedlar, Michael Sayer & David T. Amm. (1996) Leakage current in rapid thermally processed lead iron niobate films synthesized by a sol gel method. Journal of Applied Physics 80:1, pages 367-371.
Crossref
W. L. Warren, G. E. Pike, K. Vanheusden, D. Dimos, B. A. Tuttle & J. Robertson. (1996) Defect-dipole alignment and tetragonal strain in ferroelectrics. Journal of Applied Physics 79:12, pages 9250-9257.
Crossref
Danielle M. Tahan, Ahmad Safari & Lisa C. Klein. (2005) Preparation and Characterization of Ba x Sr 1‐x , TiO 3 Thin Films by a Sol‐Gel Technique . Journal of the American Ceramic Society 79:6, pages 1593-1598.
Crossref
Dirk J. Wouters, Geert J. Willems & Herman E. Maes. (1995) Electrical conductivity in ferroelectric thin films. Microelectronic Engineering 29:1-4, pages 249-256.
Crossref

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