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Integrated Ferroelectrics
An International Journal
Volume 12, 1996 - Issue 2-4
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Session IV: Thin films

Effects of oxidants on the deposition and dielectric properties of the SrTiO3 thin films prepared by liquid source metal-organic chemical vapor deposition (MOCVD)

Cheol Seong Hwang Samsung Electronics Co., Ltd., Semiconductor R&D center, San #24, Nongseo-Ri, Kiheung-Eup, Yongin-Si, Kyungki-Do, 449-900, Korea
,
Chang Seok Kang Samsung Electronics Co., Ltd., Semiconductor R&D center, San #24, Nongseo-Ri, Kiheung-Eup, Yongin-Si, Kyungki-Do, 449-900, Korea
,
Hag-Ju Cho Samsung Electronics Co., Ltd., Semiconductor R&D center, San #24, Nongseo-Ri, Kiheung-Eup, Yongin-Si, Kyungki-Do, 449-900, Korea
,
Soon Oh Park Samsung Electronics Co., Ltd., Semiconductor R&D center, San #24, Nongseo-Ri, Kiheung-Eup, Yongin-Si, Kyungki-Do, 449-900, Korea
,
Byoung Taek Lee Samsung Electronics Co., Ltd., Semiconductor R&D center, San #24, Nongseo-Ri, Kiheung-Eup, Yongin-Si, Kyungki-Do, 449-900, Korea
,
Jin Won Kim Samsung Electronics Co., Ltd., Semiconductor R&D center, San #24, Nongseo-Ri, Kiheung-Eup, Yongin-Si, Kyungki-Do, 449-900, Korea
,
Hideki Horii Samsung Electronics Co., Ltd., Semiconductor R&D center, San #24, Nongseo-Ri, Kiheung-Eup, Yongin-Si, Kyungki-Do, 449-900, Korea
,
Sang In Lee Samsung Electronics Co., Ltd., Semiconductor R&D center, San #24, Nongseo-Ri, Kiheung-Eup, Yongin-Si, Kyungki-Do, 449-900, Korea
&
Moon Yong Lee Samsung Electronics Co., Ltd., Semiconductor R&D center, San #24, Nongseo-Ri, Kiheung-Eup, Yongin-Si, Kyungki-Do, 449-900, Korea
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Pages 199-213 | Received 27 May 1996, Published online: 19 Aug 2006

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Wenhui Ma, Patrick Schäfer, Peter Ehrhart & Painer Waser. (2000) Metalorganic chemical vapor deposition of BaTiO3 and SrTiO3 thin films using a single solution source with a non-contact vaporizer. Integrated Ferroelectrics 30:1-4, pages 139-148.
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Articles from other publishers (7)

Sang Woon Lee, Byung Joon Choi, Taeyong Eom, Jeong Hwan Han, Seong Keun Kim, Seul Ji Song, Woongkyu Lee & Cheol Seong Hwang. (2013) Influences of metal, non-metal precursors, and substrates on atomic layer deposition processes for the growth of selected functional electronic materials. Coordination Chemistry Reviews 257:23-24, pages 3154-3176.
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Sang Woon Lee, Jeong Hwan Han, Sora Han, Woongkyu Lee, Jae Hyuck Jang, Minha Seo, Seong Keun Kim, C. Dussarrat, J. Gatineau, Yo-Sep Min & Cheol Seong Hwang. (2011) Atomic Layer Deposition of SrTiO 3 Thin Films with Highly Enhanced Growth Rate for Ultrahigh Density Capacitors . Chemistry of Materials 23:8, pages 2227-2236.
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Seong Keun Kim, Sang Woon Lee, Jeong Hwan Han, Bora Lee, Seungwu Han & Cheol Seong Hwang. (2010) Capacitors with an Equivalent Oxide Thickness of <0.5 nm for Nanoscale Electronic Semiconductor Memory. Advanced Functional Materials 20:18, pages 2989-3003.
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Toshihiro Nakamura, Takuro Nishimura & Kunihide Tachibana. (2004) Thermal Decomposition Mechanism of a Titanium Source, Ti(MPD)(METHD)[sub 2], in MOCVD. Journal of The Electrochemical Society 151:12, pages C806.
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Toshihiro Nakamura, Takuro Nishimura, Shun Momose & Kunihide Tachibana. (2004) In Situ Infrared Spectroscopic Study on a Titanium Source in MOCVD. Journal of The Electrochemical Society 151:10, pages C605.
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Anne Kosola, Matti Putkonen, Leena-Sisko Johansson & Lauri Niinistö. (2003) Effect of annealing in processing of strontium titanate thin films by ALD. Applied Surface Science 211:1-4, pages 102-112.
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B. M. Gol’tsman & V. K. Yarmarkin. (1999) Ferroelectric materials for dynamic-memory integrated circuits. Technical Physics 44:5, pages 558-561.
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