Citations (21)
Keep up to date with the latest research on this topic with citation updates for this article.
Read on this site (4)
K. Arita, T. Otsuki, Z. Chen, M. Lim, J.W. Bacon & C.A. Paz De Araujo. (1999) Electrical properties of Y1-based ferroelectric gate MOS capacitors for nonvolatile memory applications. Integrated Ferroelectrics 27:1-4, pages 19-29.
Read now
Read now
Frank Hintermaier, Bryan Hendrix, Debra Desrochers, Jeffrey Roeder, Thomas Baum, Peter
Van Buskirk, Dirk Bolten, Michael Grossmann, Oliver Lohse, Marcus Schumacher, Rainer Waser, Hans Cerva, Christine Dehm, Elke Fritsch, Wolfgang Hönlein, Carlos Mazuré, Nicolas Nagel, Peter Thwaite & Hermann Wendt. (1998) Properties of SrBi2Ta2O9 thin films grown by MOCVD for high density FeRAM applications. Integrated Ferroelectrics 21:1-4, pages 367-379.
Read now
Read now
PeterCVan Buskirk, JeffreyF. Roeder, ThomasH. Baum, StevenM. Bilodeau, MichaelW. Russell, StephenT. Johnston, RalphJ. Carl, DeborahJ. Desrochers, BryanC. Hendrix & Frank Hintermaier. (1998) Common and unique aspects of perovskite thin film CVD processes. Integrated Ferroelectrics 21:1-4, pages 273-289.
Read now
Read now
K. Arita, S. Hayashi, T. Otsuki, Z. Chen, M. Lim, J.W. Bacon & C.A. Paz de Araujo. (1998) Characterization of ferroelectric gate Mos capacitors formed by mod technique for nonvolatile memory applications. Integrated Ferroelectrics 22:1-4, pages 143-152.
Read now
Read now
Articles from other publishers (17)
Steven J. Brewer, Samuel C. Williams, Carmen Z. Deng, Aaron B. Naden, Sabine M. Neumayer, Brian J. Rodriguez, Amit Kumar & Nazanin Bassiri‐Gharb. (2017)
Functional and structural effects of layer periodicity in chemical solution‐deposited Pb(Zr,Ti)O
3
thin films
. Journal of the American Ceramic Society 100:12, pages 5561-5572.
Crossref
Crossref
Steven J. Brewer, Hanhan Zhou, Samuel C. Williams, Ryan Q. Rudy, Manuel Rivas, Ronald G. Polcawich, Cory D. Cress, Evan R. Glaser, Elizabeth A. Paisley, Jon F. Ihlefeld, Jacob L. Jones & Nazanin Bassiri-Gharb. (2017) Effect of microstructure on irradiated ferroelectric thin films. Journal of Applied Physics 121:24.
Crossref
Crossref
X.Vendrell, O. Raymond, D.A. Ochoa, J.E. García & L. Mestres. (2015) Growth and physical properties of highly oriented La-doped (K,Na)NbO3 ferroelectric thin films. Thin Solid Films 577, pages 35-41.
Crossref
Crossref
M S Bhuiyan, M Paranthaman & K Salama. (2006) Solution-derived textured oxide thin films—a review. Superconductor Science and Technology 19:2, pages R1-R21.
Crossref
Crossref
Apurba Laha, S. B. Krupanidhi & S. Saha. (2011)
Dielectric Properties of Pulsed Excimer Laser Ablated BaBi
2
Nb
2
O
9
Thin Films
. MRS Proceedings 748.
Crossref
Crossref
S. R. Summerfelt, T. S. Moise, G. Xing, L. Colombo, T. Sakoda, S. R. Gilbert, A. L. S. Loke, S. Ma, L. A. Wills, R. Kavari, T. Hsu, J. Amano, S. T. Johnson, D. J. Vestcyk, M. W. Russell, S. M. Bilodeau & P. van Buskirk. (2001) Demonstration of scaled (⩾0.12 μm2) Pb(Zr,Ti)O3 capacitors on W plugs with Al interconnect. Applied Physics Letters 79:24, pages 4004-4006.
Crossref
Crossref
G Kilian, M Rommel, W Pamler, E Unger, A Höpfner & B.O Kolbesen. (2001) Some aspects of the high-temperature behavior of bismuth, strontium and barium on silicon surfaces studied by total reflection X-ray fluorescence spectrometry. Spectrochimica Acta Part B: Atomic Spectroscopy 56:11, pages 2313-2319.
Crossref
Crossref
R Ramesh, S Aggarwal & O Auciello. (2001) Science and technology of ferroelectric films and heterostructures for non-volatile ferroelectric memories. Materials Science and Engineering: R: Reports 32:6, pages 191-236.
Crossref
Crossref
Apurba Laha, S. Saha & S. B. Krupanidhi. (2011)
Analysis of Alternating Current Conduction and Impedance Spectroscopy Study of BaBi
2
Nb
2
O
9
Thin Films
. MRS Proceedings 688.
Crossref
Crossref
G.F. Derbenwick & A.F. Isaacson. (2001) Ferroelectric memory: on the brink of breaking through. IEEE Circuits and Devices Magazine 17:1, pages 20-30.
Crossref
Crossref
M. Klee, H. van Hal, W. Keur, W. Brand, R. Kiewitt, U. Mackens & C. Metzmacher. 2001. Handbook of Advanced Electronic and Photonic Materials and Devices. Handbook of Advanced Electronic and Photonic Materials and Devices
195
217
.
R.Kenneth Marcus & Robert W. Schwartz. (2000) Compositional profiling of solution-deposited lead zirconate–titanate thin films by radio-frequency glow discharge atomic emission spectroscopy (rf-GD-AES). Chemical Physics Letters 318:4-5, pages 481-487.
Crossref
Crossref
K. S. Brinkman, R. W. Schwartz & J. Ballato. (2011) UV Radiation Effects on the Sol-Gel Processing of Ferroelectric PZT Thin Films. MRS Proceedings 623.
Crossref
Crossref
C. Paz de Araujo, L. McMillan, V. Joshi, N. Solayappan, M. Lim, K. Arita, N. Moriwaki, H. Hirano, T. Baba, Y. Shimada, T. Sumi, E. Fujii & T. Otsuki. (2000) The future of ferroelectric memories. The future of ferroelectric memories.
Robert W. Schwartz, Paul G. Clem, James A. Voigt, Elena R. Byhoff, Melanie Van Stry, Thomas J. Headley & Nancy A. Missert. (2004)
Control of Microstructure and Orientation in Solution‐Deposited BaTiO
3
and SrTiO
3
Thin Films
. Journal of the American Ceramic Society 82:9, pages 2359-2367.
Crossref
Crossref
K. S Brinkman, R. W. Schwartz, R. K Marcus & A. Anfone. (2011) Depth Profiling of Solution-Deposited Lead Zirconate Titanate Thin Films by Radio Frequency Glow Discharge Atomic Emission Spectroscopy (RF-GDAES). MRS Proceedings 596.
Crossref
Crossref
A. Stanishevsky. (1998) Focused ion-beam patterning of nanoscale ferroelectric capacitors. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 16:6, pages 3899.
Crossref
Crossref