Characterization of ferroelectric gate Mos capacitors formed by mod technique for nonvolatile memory applications

K. Arita Electronics Research Laboratory, Matsushita Electronics Corporation, 1–1 Saiwai-cho, Takatsuki, Osaka, 569-1193, JAPAN

S. Hayashi Electronics Research Laboratory, Matsushita Electronics Corporation, 1–1 Saiwai-cho, Takatsuki, Osaka, 569-1193, JAPAN

T. Otsuki Electronics Research Laboratory, Matsushita Electronics Corporation, 1–1 Saiwai-cho, Takatsuki, Osaka, 569-1193, JAPAN

Z. Chen Department of Electrical and Computer Engineering, University of Colorado, 1420 Austin Bluffs Parkway, Colorado Springs, CO, 80933–7150, USA

M. Lim Symetrix Corporation, 5055 Mark Dabling Boulevard, Colorado Springs, CO, 80918–3862, USA

J. W. Bacon Symetrix Corporation, 5055 Mark Dabling Boulevard, Colorado Springs, CO, 80918–3862, USA

C. A. Paz de Araujo Electronics Research Laboratory, Matsushita Electronics Corporation, 1–1 Saiwai-cho, Takatsuki, Osaka, 569-1193, JAPAN

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Abstract

Metal/ferroelectric/insulator/semiconductor (MFIS) -structured ferroelectric gate MOS capacitors were fabricated and characterized. The metalorganic decomposition (MOD) technique was employed for the deposition of not only the ferroelectric but also the insulator, which has been usually deposited by e-beam evaporation. the experimental results indicate the usefulness of this technique for the fabrication of this heterostructure, which will accelerate the material research in this field.

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Characterization of ferroelectric gate Mos capacitors formed by mod technique for nonvolatile memory applications

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Characterization of ferroelectric gate Mos capacitors formed by mod technique for nonvolatile memory applications

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