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Integrated Ferroelectrics
An International Journal
Volume 14, 1997 - Issue 1-4
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Materials processing - CVD

Lead content control of PLZT thin films prepared by RF magnetron sputtering

K. Suu Institute for Super Materials, ULVAC Japan, Ltd., 523 YOKOTA SANBU-MACHI SANBU-GUN, CHIBA, 289-12, JAPAN
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A. Osawa Institute for Super Materials, ULVAC Japan, Ltd., 523 YOKOTA SANBU-MACHI SANBU-GUN, CHIBA, 289-12, JAPAN
,
N. Tani Institute for Super Materials, ULVAC Japan, Ltd., 523 YOKOTA SANBU-MACHI SANBU-GUN, CHIBA, 289-12, JAPAN
,
M. Ishikawa Institute for Super Materials, ULVAC Japan, Ltd., 523 YOKOTA SANBU-MACHI SANBU-GUN, CHIBA, 289-12, JAPAN
,
K. Nakamura Institute for Super Materials, ULVAC Japan, Ltd., 523 YOKOTA SANBU-MACHI SANBU-GUN, CHIBA, 289-12, JAPAN
,
T. Ozawa VLSI R&D DIVISION, ROHM CO., Ltd., 21 SAIIN MIZOSAKI-CHO, UKYO-KU, KYOTO, 615, JAPAN
,
K. Sameshima VLSI R&D DIVISION, ROHM CO., Ltd., 21 SAIIN MIZOSAKI-CHO, UKYO-KU, KYOTO, 615, JAPAN
,
A. Kamisawa VLSI R&D DIVISION, ROHM CO., Ltd., 21 SAIIN MIZOSAKI-CHO, UKYO-KU, KYOTO, 615, JAPAN
&
H. Takasu VLSI R&D DIVISION, ROHM CO., Ltd., 21 SAIIN MIZOSAKI-CHO, UKYO-KU, KYOTO, 615, JAPAN
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Pages 59-68 | Received 18 Mar 1996, Published online: 19 Aug 2006

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Takeshi Masuda, Yusuke Miyaguchi, Koukou Suu & Shan Sun. (2000) Preparation of SrBi2(Ta, Nb)2O9 thin films by rf sputtering for ferroelectric memory production. Integrated Ferroelectrics 31:1-4, pages 23-33.
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K. Suu, N. Tani, F. Chu, G. Hickert, T.D. Hadnagy & T. Davenport. (1999) Process stability of ferroelectric PLZT thin film sputtering for FRAM® production. Integrated Ferroelectrics 26:1-4, pages 9-19.
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Koukou Suu, Takeshi Masuda, Yutaka Nishioka & Noriakitani. (1998) Preparation of SrBi2Ta2O9 ferroelectric thin film by rf magnetron sputtering. Integrated Ferroelectrics 21:1-4, pages 407-418.
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Articles from other publishers (10)

. 2020. Handbook of Silicon Based MEMS Materials and Technologies. Handbook of Silicon Based MEMS Materials and Technologies 133 213 .
K. Suu, I. Kimura, H. Kobayashi, Y. Miyaguchi, T. Masuda, Y. Kokaze & T. Jimbo. (2017) Thin-film processing of “exotic” phase-change and ferroelectric materials for IoT applications. Thin-film processing of “exotic” phase-change and ferroelectric materials for IoT applications.
. 2015. Handbook of Silicon Based MEMS Materials and Technologies. Handbook of Silicon Based MEMS Materials and Technologies 124 205 .
Mehdi Rezaei, Jonathan Lueke, Don Raboud & Walied Moussa. (2013) Challenges in fabrication and testing of piezoelectric MEMS with a particular focus on energy harvesters. Microsystem Technologies 19:8, pages 1195-1219.
Crossref
Rudeger H. T. Wilke, Raegan L. Johnson-Wilke, Vincenzo Cotroneo, William N. Davis, Paul B. Reid, Daniel A. Schwartz & Susan Trolier-McKinstry. (2013) Sputter deposition of PZT piezoelectric films on thin glass substrates for adjustable x-ray optics. Applied Optics 52:14, pages 3412.
Crossref
Yi Gui Li, Jian Sun, Jing Quan Liu, Chun Sheng Yang, Dan Nong He, Katsuhiko Tanaka & Susumu Sugiyama. (2010) Evaluation of Properties of Lapped PZT Ceramics and Silicon Cantilever Based on Eutectic Bonding and Dicing Process. Materials Science Forum 663-665, pages 999-1003.
Crossref
T. Masuda, Y. Miyaguchi, M. Tanimura, Y. Nishioka, K. Suu & N. Tani. (2001) Development of PZT sputtering method for mass-production. Applied Surface Science 169-170, pages 539-543.
Crossref
K. Yamakawa, O. Arisumi, K. Okuwada, K. Tsutsumi & T. Katata. (1998) Development of stable PZT sputtering process using ex-situ crystallization and PZT/Pt interface control technique. Development of stable PZT sputtering process using ex-situ crystallization and PZT/Pt interface control technique.
K. Suu, T. Masuda, Y. Nishioka & N. Tani. (1998) Process stability control of Pb(Zr,Ti)O/sub 3/ ferroelectric thin film sputtering for FRAM application. Process stability control of Pb(Zr,Ti)O/sub 3/ ferroelectric thin film sputtering for FRAM application.
N. Inoue, Y. Maejima & Y. Hayashi. (1997) Crystal-orientation controlled PZT FeRAM-capacitors using RF magnetron sputtering with 12"φ single target. Crystal-orientation controlled PZT FeRAM-capacitors using RF magnetron sputtering with 12"φ single target.

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