Preparation of SrBi₂Ta₂O₉ ferroelectric thin film by rf magnetron sputtering

Koukou Suu Institute for Super Materials, ULVAC Japan, Ltd., 523 Yokota Sanbu, Sanbu, Chiba, 289-1226, Japan

Takeshi Masuda Institute for Super Materials, ULVAC Japan, Ltd., 523 Yokota Sanbu, Sanbu, Chiba, 289-1226, Japan

Yutaka Nishioka Institute for Super Materials, ULVAC Japan, Ltd., 523 Yokota Sanbu, Sanbu, Chiba, 289-1226, Japan

Noriakitani Institute for Super Materials, ULVAC Japan, Ltd., 523 Yokota Sanbu, Sanbu, Chiba, 289-1226, Japan

Abstract

SrBi₂Ta₂O₉ (SBT) thin films were deposited on 6-inch Pt/Ti/SiO₂/Si substrates by rf magnetron sputtering using a 12-inch ceramic SBT single target. It is found that several sputtering parameters such as argon (Ar) pressure and rf power were very effective to control the Bi content of SBT thin films which is essential for obtaining good ferroelectric properties.

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Preparation of SrBi₂Ta₂O₉ ferroelectric thin film by rf magnetron sputtering

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Preparation of SrBi₂Ta₂O₉ ferroelectric thin film by rf magnetron sputtering