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Integrated Ferroelectrics
An International Journal
Volume 14, 1997 - Issue 1-4
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Materials processing - SOL-GEL

Electrical characteristics of PT-bismuth strontium tantalate(BST)-P-SI with zirconium oxide buffer layer

M. Lim Microelectronics Research Laboratories Department of Electrical and Computer Engineering University of Colorado, Colorado Springs, CO, 80933-7150
&
T. S. Kalkur Microelectronics Research Laboratories Department of Electrical and Computer Engineering University of Colorado, Colorado Springs, CO, 80933-7150
Pages 247-257 | Received 18 Mar 1996, Published online: 19 Aug 2006

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CHOON-HO LEE & SUN-IL KIM. (2004) Electrical Properties of PZT/Mg2TiO4 Thin Films Made by Low Pressure MOCVD. Integrated Ferroelectrics 68:1, pages 37-43.
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T.S. Kalkur & John Lindsey. (2001) Electrical characteristics of Pt-SBT-Polysilicon (MFIP) capacitors with yttrium oxide as the buffer layer. Integrated Ferroelectrics 34:1-4, pages 147-153.
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Yin-Yin Lin, Ting-Ao Tang, Wei-Ning Huang & Guo-Bao Jiang. (2001) C-V characteristics of metal ferroelectrics insulator semiconductor (MFIS) using a Au/Cr/PZT/ZrO2/Si structure. Ferroelectrics 260:1, pages 9-14.
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M. Lim & T.S. Kalkur. (1998) The role of leakge current on the memory window and memory retention in MFIS structure. Integrated Ferroelectrics 22:1-4, pages 205-211.
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Myoungho Lim & T.S. Kalkur. (1997) The role of buffer layer in strontium bismuth tantalate based ferroelectric gate mos structures for non-volatile non destructive read out memory applications. Integrated Ferroelectrics 17:1-4, pages 433-441.
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Articles from other publishers (15)

Robin Khosla & Satinder K. Sharma. (2021) Integration of Ferroelectric Materials: An Ultimate Solution for Next-Generation Computing and Storage Devices. ACS Applied Electronic Materials 3:7, pages 2862-2897.
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Prashant Singh, Rajesh Kumar Jha, Rajat Kumar Singh & B R Singh. (2018) On the structural and electrical properties of metal–ferroelectric–high k dielectric–silicon structure for non-volatile memory applications. Bulletin of Materials Science 41:4.
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Xubing Lu. 2012. High‐k Gate Dielectrics for CMOS Technology. High‐k Gate Dielectrics for CMOS Technology 471 499 .
Xu-Dong Weng, Qing-Qing Sun, An-Quan Jiang & David-Wei Zhang. (2010) Characterization of Au/Pb(Zr0.96Ti0.04)O3/Al2O3/Si antiferroelectric field-effect transistors for memory application. Journal of Electroceramics 25:2-4, pages 174-178.
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Ch.H. Yang, H.T. Wu & D.M. Yang. (2007) Effects of a Bi2Ti2O7 seeding layer on properties of Bi3.5Nd0.5Ti3O12 thin film. Materials Letters 61:19-20, pages 4166-4168.
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Kwang-Ho Kim, Sang-Hyun Jeong, Haeng-Chul Choi, Soon-Won Jung & Jae-Hyun Kim. (2006) Properties of MFS Structures Using Ferroelectric VF<inf>2</inf>-TrFE Copolymer Film Gate. Properties of MFS Structures Using Ferroelectric VF<inf>2</inf>-TrFE Copolymer Film Gate.
S. H. Lim, A. C. Rastogi & S. B. Desu. (2004) Electrical properties of metal-ferroelectric-insulator-semiconductor structures based on ferroelectric polyvinylidene fluoride copolymer film gate for nonvolatile random access memory application. Journal of Applied Physics 96:10, pages 5673-5682.
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Ik Soo Kim, Seong-Il Kim & Yong Tae Kim. (2004) Oxygen plasma rapid thermal annealing to improve the electrical properties of Pt–SrBi2Nb2O9–SiO2–Si gate structure. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 22:3, pages 636-639.
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Hoon Sang Choi, Geun-Sik Lim, Jong-Han Lee, Yong Tae Kim, Seong-Il Kim, Dong Chul Yoo, Jeong Yong Lee & In-Hoon Choi. (2003) Improvement of electrical properties of ferroelectric gate oxide structure by using Al2O3 thin films as buffer insulator. Thin Solid Films 444:1-2, pages 276-281.
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Hoon Sang Choi, Geun-Sik Lim, Jong Han Lee, You Min Jang, Dong Chul Yoo, Jeong Yong Lee & In-Hoon Choi. (2003) Growth and characterization of Al2O3 thin films for the buffer insulator in Pt/SrBi2Nb2O9/Al2O3/Si ferroelectric gate oxide structure. Metals and Materials International 9:3, pages 293-298.
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. (2003) The Heat Treatment Effect of ZrO 2 Buffer Layer on the Electrical Properties of Pt/SrBi 2 Ta 2 O 9 /ZrO 2 /Si Structure . Journal of the Korean Ceramic Society 40:1, pages 52-61.
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Hoon Sang Choi, Eun Hong Kim, In-Hoon Choi, Yong Tae Kim, Jae Hyoung Choi & Jeong Yong Lee. (2001) The effect of ZrO2 buffer layer on electrical properties in Pt/SrBi2Ta2O9/ZrO2/Si ferroelectric gate oxide structure. Thin Solid Films 388:1-2, pages 226-230.
Crossref
James F. ScottJames F. Scott. 2000. Ferroelectric Memories. Ferroelectric Memories 179 184 .
James F. ScottJames F. Scott. 2000. Ferroelectric Memories. Ferroelectric Memories 175 178 .
Myoung-Ho Lim, T. S. Kalkur & Yong-Tae Kim. (2011) Strontium Bismuth Tantalate Based Ferroelectric Gate Field Effect Transistor with Yttrium Oxide as the Buffer Layer. MRS Proceedings 493.
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