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Integrated Ferroelectrics
An International Journal
Volume 19, 1998 - Issue 1-4
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Original Articles

Pb(Zr,Ti)O3-silicon heterostructures fabricated by direct wafer bonding

Marin Alexe Max-Planck Institute of Microstructure Physics, Weinberg, 2, D-06120, Halle (Saale), Germany
,
James F. Scott Max-Planck Institute of Microstructure Physics, Weinberg, 2, D-06120, Halle (Saale), Germany; University of New South Wales, Faculty of Science, Sydney, 2052, Australia
,
Alain Pignolet Max-Planck Institute of Microstructure Physics, Weinberg, 2, D-06120, Halle (Saale), Germany
,
Dietrich Hesse Max-Planck Institute of Microstructure Physics, Weinberg, 2, D-06120, Halle (Saale), Germany
&
Ulrich Gösele Max-Planck Institute of Microstructure Physics, Weinberg, 2, D-06120, Halle (Saale), Germany
Pages 95-109 | Received 15 Sep 1997, Published online: 03 Sep 2006

Citations (6)

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Read on this site (4)

M. Alexe & D. Hesse. (2012) One-Dimensional Ferroelectrics: Nanowires and Nanotubes. Ferroelectrics 433:1, pages 53-64.
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S. Uhlig, M. Nicolai, A. Schönecker & A. Michaelis. (2009) Investigation of domain related topography formation during chemical mechanical polishing of piezoelectric ceramic material. Materials Science and Technology 25:11, pages 1321-1324.
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M. Alexe, St. Senz, A. Pignolet, D. Hesse & U. Gösele. (1999) Direct wafer bonding and layer transfer-a new approach to integration of ferroelectric oxides into silicon technology. Ferroelectrics 231:1, pages 169-178.
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M. Alexe, St. Senz, A. Pignqlet, D. Hesse & U. Gösele. (1999) Structural and electrical properties of metal-ferroelectric-silicon heterostructure fabricated by a direct wafer bonding and layer transfer process. Ferroelectrics 225:1, pages 75-82.
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Articles from other publishers (2)

Örjan Vallin, Kerstin Jonsson & Ulf Lindberg. (2005) Adhesion quantification methods for wafer bonding. Materials Science and Engineering: R: Reports 50:4-5, pages 109-165.
Crossref
James F. ScottJames F. Scott. 2000. Ferroelectric Memories. Ferroelectric Memories 185 187 .

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