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Integrated Ferroelectrics
An International Journal
Volume 22, 1998 - Issue 1-4
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Session 7. Testing and characterization

Addition of Ca and Sr in PLZT to improve fram® performance and reliability

T. D. Hadnagy Ramtron International Corporation, Colorado Springs, CO, 80921, USA
&
Tom Davenport Ramtron International Corporation, Colorado Springs, CO, 80921, USA
Pages 183-193 | Received 03 Apr 1998, Published online: 19 Aug 2006

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T. TAMURA, H. HOKO, Y. ARIMOTO & H. ISHIWARA. (2004) Fabrication of Sol-Gel Thin Films of Silicate-Doped PZT. Integrated Ferroelectrics 62:1, pages 105-107.
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Fan Chu & Glen Fox. (2001) Relationship between PB content, crystallographic texture and ferroelectric properties of plzt thin films for FRAM® applications. Integrated Ferroelectrics 33:1-4, pages 19-26.
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T. Domokos Hadnagy, Dave Dalton, Becky Thomas, Shan Sun & Rick Bailey. (2001) Retention after fatigue of ferroelectric memories. Integrated Ferroelectrics 37:1-4, pages 215-223.
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Fan Chu, Glen Fox & Tom Davenport. (2001) High endurance scaled plzt thin films for fram applications. Integrated Ferroelectrics 36:1-4, pages 43-52.
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Seung-Hyun Kim, Dong-Yeon Park, Hyun-Jung Woo, Dong-Soo Lee, Jowoong Ha, Cheol Seong Hwang, Seehwa Jeong & AngusI. Kingon. (2001) The low-volatage-switching behavior of sol-gel-derived Pb(Zr, Ti)O3 thin film capacitors. Integrated Ferroelectrics 39:1-4, pages 13-22.
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GlenR. Fox, Shan Sun, Brian Eastep & T. Domokos Hadnagy. (1999) Comparison of CSD and sputtered PZT with iridium electrodes. Integrated Ferroelectrics 26:1-4, pages 215-223.
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F. Chu, G. Hickert, T.D. Hadnagy & K.K. Suu. (1999) Ferroelectric properties of PLZT thin films prepared using ULVAC ZX-1000 sputtering system. Integrated Ferroelectrics 26:1-4, pages 47-55.
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K. Suu, N. Tani, F. Chu, G. Hickert, T.D. Hadnagy & T. Davenport. (1999) Process stability of ferroelectric PLZT thin film sputtering for FRAM® production. Integrated Ferroelectrics 26:1-4, pages 9-19.
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Articles from other publishers (7)

D. J. Wouters, D. Maes, L. Goux, J. G. Lisoni, V. Paraschiv, J. A. Johnson, M. Schwitters, J.-L. Everaert, W. Boullart, M. Schaekers, M. Willegems, H. Vander Meeren, L. Haspeslagh, C. Artoni, C. Caputa, P. Casella, G. Corallo, G. Russo, R. Zambrano, H. Monchoix, G. Vecchio & L. Van Autryve. (2006) Integration of SrBi2Ta2O9 thin films for high density ferroelectric random access memory. Journal of Applied Physics 100:5.
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Kang-Woon Lee & Won-Jong Lee. (2006) Imprint characteristics of Pt/Pb(Zr,Ti)O3/Ir capacitors. Metals and Materials International 12:1, pages 85-93.
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G. R. Fox, F. Chu & T. Davenport. (2001) Current and future ferroelectric nonvolatile memory technology. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena 19:5, pages 1967-1971.
Crossref
Seung-Hyun Kim, Hyun-Jung Woo, Jowoong Ha, Cheol Seong Hwang, Hae Ryoung Kim & Angus I. Kingon. (2001) Thickness effects on imprint in chemical-solution-derived (Pb, La)(Zr, Ti)O3 thin films. Applied Physics Letters 78:19, pages 2885-2887.
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M. A. McCormick, E. B. Slamovich, P. Metcalf & M. McElfresh. (2011) Effect of Capacitor Configuration on Oxygen-dependent Electrical Properties of Ferroelectric Pb(Zr,Ti)O 3 Thin Films . MRS Proceedings 688.
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Qi Tan & Jianxing Li. (2000) Observation of fine structures of nanodomains in donor-modified Pb(Zr,Ti)O3 ferroelectrics. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena 18:4, pages 2021-2023.
Crossref
G. R. Fox. (2011) Effect of Crystallographic Texture on Ferroelectric Performance of PZT Thin Films. MRS Proceedings 596.
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