Advanced search
Publication Cover
Philosophical Magazine B Volume 49, 1984 - Issue 3
Journal homepage
42
Views
70
CrossRef citations to date
0
Altmetric
Letters Section

Steady-state photoconductivity in amorphous semiconductors containing correlated defects

H. Okamoto Faculty of Engineering Science, Osaka University, Toyonaka, Osaka, 560, Japan
,
H. Kida Faculty of Engineering Science, Osaka University, Toyonaka, Osaka, 560, Japan
&
Y. Hamakawa Faculty of Engineering Science, Osaka University, Toyonaka, Osaka, 560, Japan
Pages 231-247 | Received 14 Jun 1983, Accepted 08 Oct 1983, Published online: 06 Dec 2006

Citations (70)

Keep up to date with the latest research on this topic with citation updates for this article.

Subscribe to citation updates

Read on this site (18)

MinhQ. Tran. (1995) On thermal quenching of the photoconductivity in hydrogenated amorphous silicon. Philosophical Magazine B 72:1, pages 35-66.
Read now
J. Bullot, P. Cordier & M. Gauthier. (1993) Photoconductivity in hydrogenated amorphous silicon. I. Thermal emission and hopping of trapped charges. Philosophical Magazine B 67:6, pages 751-762.
Read now
J. Hubin, A.V. Shah & E. Sauvain. (1992) Effects of dangling bonds on the recombination function in amorphous semiconductors. Philosophical Magazine Letters 66:3, pages 115-125.
Read now
Y. Almeriouh, J. Bullot, P. Cordier, M. Gauthier & G. Mawawa. (1991) Light intensity dependence of the photoconductivity of hydrogenated amorphous silicon. Philosophical Magazine B 63:5, pages 1015-1030.
Read now
E. Morgado. (1991) Recombination at correlated dangling bonds and the effects of Fermi level position on steady-state photoconductwiry in amorphous silicon. Philosophical Magazine B 63:2, pages 529-542.
Read now
J. Kočka, C.E. Nebel & C.D. Abel. (1991) Solution of the μτ problem in a-Si: H. Philosophical Magazine B 63:1, pages 221-246.
Read now
G.J. Adriaenssens. (1990) Distribution of gap states in a-As2Se3 . Philosophical Magazine B 62:1, pages 79-87.
Read now
M. Imai, T. Mitamura & K. Tsuji. (1990) Pressure dependence of photoconductivity for hydrogenated amorphous silicon. High Pressure Research 3:1-6, pages 40-42.
Read now
J. Bullot, P. Cordier, M. Gauthier & G. Mawawa. (1990) Trapping and recombination in amorphous hydrogenated silicon studied by dual-beam-modulated photoconductivity. Philosophical Magazine B 61:3, pages 413-424.
Read now
W. Grevendonk, M. Verluyten, J. Dauwen, G.J. Adriaenssens & J. Bezemer. (1990) Optical modulation spectroscopy of dangling bonds in a-Si: H. Philosophical Magazine B 61:3, pages 393-402.
Read now
J. Bullot, P. Cordier, M. Gauthier & G. Mawawa. (1989) Trapping in hydrogenated amorphous silicon studied by dual-beam modulated photoconductivity. Philosophical Magazine B 59:6, pages 681-689.
Read now
F. Vaillant, D. Jousse & J.-C. Bruyere. (1988) Recombination at dangling bonds and band tails: Temperature dependence of photoconductivity in hydrogenated amorphous silicon. Philosophical Magazine B 57:5, pages 649-661.
Read now
Kiminori Hattori, Hiroaki Okamoto & Yoshihiro Hamakawa. (1988) Transient photocurrent study of the dangling bond centre in undoped amorphous silicon. Philosophical Magazine B 57:1, pages 13-29.
Read now
V. Halpern. (1986) The statistics of recombination via dangling bonds in amorphous silicon. Philosophical Magazine B 54:6, pages 473-482.
Read now
K. Shimakawa, Y. Yano & Y. Katsuma. (1986) Origin of the non-exponential photocurrent decay in amorphous semiconductors. Philosophical Magazine B 54:4, pages 285-299.
Read now
G.B. Smith & D.R. McKenzie. (1986) Steady-state photoconductivity in a-Si:H prepared by d.c. magnetron methods. Philosophical Magazine B 54:4, pages 255-272.
Read now
P.G. Le Comber & W.E. Spear. (1986) The energy of the dangling-bond states in a-Si. Philosophical Magazine B 53:1, pages L1-L7.
Read now
Hiroaki Okamoto, Hirotsugu Kida, Takeshi Kamada & Yoshihiro Hamakawa. (1985) Below-gap primary photocurrent associated with correlated defects in hydrogenated amorphous silicon. Philosophical Magazine B 52:6, pages 1115-1133.
Read now

Articles from other publishers (52)

Leonardo Kopprio, Christophe Longeaud & Javier Schmidt. (2019) Hydrogenated amorphous silicon characterization from steady state photoconductive measurements. Semiconductor Science and Technology 34:4, pages 045010.
Crossref
N. QamhiehS.T. MahmoudA.I. Ayesh. (2014) Defect states in amorphous Ge 2 Sb 2 Te 5 phase change material . Canadian Journal of Physics 92:7/8, pages 619-622.
Crossref
Tobbeche Souad & Amar Merazga. (2013) Tunneling Recombination Mechanism in n-Type a-Si:H Steady State Regime. Advanced Materials Research 774-776, pages 816-823.
Crossref
Rudolf Brüggemann. 2012. Physics and Technology of Amorphous-Crystalline Heterostructure Silicon Solar Cells. Physics and Technology of Amorphous-Crystalline Heterostructure Silicon Solar Cells 261 299 .
D. Singh, S. Kumar, S. Kaur & R. Thangaraj. (2011) Effect of Ag additive on the photoconductive properties of (Se 80 Te 20 ) 100−x Ag x (1 ≤ x ≤ 4) thin films . The European Physical Journal Applied Physics 55:3, pages 30301.
Crossref
S. Shukla. (2010) Electrical transport in thin films of glassy Ge40Te60-xSbx alloys*. Semiconductor physics, quantum electronics and optoelectronics 13:4, pages 422-425.
Crossref
S Tardon & R Brüggemann. (2010) Characterization of the interface properties in a-Si : H/c-Si heterostructures by photoluminescence. Journal of Physics D: Applied Physics 43:11, pages 115102.
Crossref
S Tobbeche & A Merazga. (2007) Numerical simulation of the transient photoconductivity in hydrogenated amorphous silicon including localized-state electron hopping. Journal of Physics: Condensed Matter 19:43, pages 436220.
Crossref
Vineet Sharma, Anup Thakur, Jeewan Sharma, Vivek Kumar, Sanjeev Gautam & S.K. Tripathi. (2007) Electrical properties of a-Se85−xTe15Snx thin films. Journal of Non-Crystalline Solids 353:13-15, pages 1474-1477.
Crossref
A Merazga, S Tobbeche, C Main, A Al-Shahrani & S Reynolds. (2006) Numerical simulation of the steady state photoconductivity in hydrogenated amorphous silicon including localized state electron hopping. Journal of Physics: Condensed Matter 18:15, pages 3721-3734.
Crossref
Guy J. Adriaenssens. (2011) Phase Transformations in Bulk (Ge2Se7)88Bi5Sb7. MRS Proceedings 918.
Crossref
S.K. Tripathi, Vineet Sharma, Anup Thakur, Jeewan Sharma, G.S.S. Saini & N. Goyal. (2005) Effect of Sb additive on the electrical properties of Se–Te alloy. Journal of Non-Crystalline Solids 351:30-32, pages 2468-2473.
Crossref
A Thakur, V Sharma, G S S Saini, N Goyal & S K Tripathi. (2005) Effect of light intensity and temperature on the recombination mechanism in a-(Ge 20 Se 80 ) 99.5 Cu 0.5 thin film . Journal of Physics D: Applied Physics 38:12, pages 1959-1965.
Crossref
F. A. Rubinelli, L. F. Marsal & J. Pallarès. (2005) Performance of annealed hybrid silicon heterojunctions: A numerical computer study. Journal of Applied Physics 97:3.
Crossref
Vineet Sharma, Anup Thakur, N Goyal, G S S Saini & S K Tripathi. (2005) Effect of In additive on the electrical properties of Se–Te alloy. Semiconductor Science and Technology 20:1, pages 103-107.
Crossref
M L Benkhedir, M Brinza & G J Adriaenssens. (2004) Electronic density of states in amorphous selenium. Journal of Physics: Condensed Matter 16:44, pages S5253-S5264.
Crossref
M.L. Benkhedir, M.S. Aida & G.J. Adriaenssens. (2004) Defect levels in the band gap of amorphous selenium. Journal of Non-Crystalline Solids 344:3, pages 193-198.
Crossref
N Qamhieh, M L Benkhedir, M Brinza, J Willekens & G J Adriaenssens. (2004) Steady-state photoconductivity in amorphous selenium glasses. Journal of Physics: Condensed Matter 16:23, pages 3827-3833.
Crossref
A M Meftah, A F Meftah, F Hiouani & A Merazga. (2004) Numerical simulation of the defect density influence on the steady state response of a silicon-based p–i–n cell. Journal of Physics: Condensed Matter 16:12, pages 2003-2016.
Crossref
Raul Jimenez Zambrano, Francisco A. Rubinelli, Wim M. Arnoldbik, Jatindra K. Rath & Ruud E.I. Schropp. (2004) Computer-aided band gap engineering and experimental verification of amorphous silicon–germanium solar cells. Solar Energy Materials and Solar Cells 81:1, pages 73-86.
Crossref
S.R. Dhariwal & S. Rajvanshi. (2003) Theory of amorphous silicon solar cell (a): numerical analysis. Solar Energy Materials and Solar Cells 79:2, pages 199-213.
Crossref
J.P. Kleider. (2003) Capacitance techniques for the evaluation of electronic properties and defects in disordered thin film semiconductors. Thin Solid Films 427:1-2, pages 127-132.
Crossref
E Klimovsky, J.K Rath, R.E.I Schropp & F.A Rubinelli. (2002) Errors introduced in a-Si:H-based solar cell modeling when dangling bonds are approximated by decoupled states. Thin Solid Films 422:1-2, pages 211-219.
Crossref
F. A. Rubinelli, R. Jiménez, J. K. Rath & R. E. I. Schropp. (2002) Using computer modeling analysis in single junction a -SiGe:H p–i–n solar cells . Journal of Applied Physics 91:4, pages 2409-2416.
Crossref
Orhan Özdemir, İsmail Atılgan & Bayram Katırcıoğlu. (2001) Instability evolution within a-SiNx film assessed through MIS structure under bias and temperature stresses. Journal of Non-Crystalline Solids 296:1-2, pages 27-38.
Crossref
Ruud E. I. Schropp & Miro ZemanRuud E. I. Schropp & Miro Zeman. 1998. Amorphous and Microcrystalline Silicon Solar Cells: Modeling, Materials and Device Technology. Amorphous and Microcrystalline Silicon Solar Cells: Modeling, Materials and Device Technology 117 146 .
J. Hubin, A. V. Shah, E. Sauvain & P. Pipoz. (1995) Consistency between experimental data for ambipolar diffusion length and for photoconductivity when incorporated into the ‘‘standard’’ defect model for a -Si:H . Journal of Applied Physics 78:10, pages 6050-6059.
Crossref
C. Longeaud & J. P. Kleider. (1993) Trapping and recombination via dangling bonds in amorphous and glassy semiconductors under steady-state conditions: Application to the modulated photocurrent experiment. Physical Review B 48:12, pages 8715-8741.
Crossref
Monique Gauthier. (1991) Dual beam modulated photoconductivity: A kinetic analysis. Journal of Non-Crystalline Solids 137-138, pages 611-614.
Crossref
D. Della Sala, C. Reita, G. Conte, F. Galluzzi & G. Grillo. (1990) Gap density of states in amorphous silicon-germanium alloy: Influence on photothermal deflection spectroscopy and steady-state conductivity measurements. Journal of Applied Physics 67:2, pages 814-825.
Crossref
B. Cleve & P. Thomas. (2011) The Influence of Tunneling Transitions on Recombination and Photoconductivity of a-Si:H. MRS Proceedings 192.
Crossref
C.-D. Abel & G.H. Bauer. (1990) Modelling of transport and recombination of photoexcited carriers in a-Si:H and a-SiGe:H. Modelling of transport and recombination of photoexcited carriers in a-Si:H and a-SiGe:H.
A.S. Maan, D.R. Goyal & A. Kumar. (1989) Steady-state photoconductivity and decay kinetics in thin films of a-In20Se80. Journal of Non-Crystalline Solids 110:1, pages 53-60.
Crossref
Jung‐Kee Yoon, Jin Jang & Choochon Lee. (1988) Temperature dependence of photoconductivity and recombination in hydrogenated amorphous silicon. Journal of Applied Physics 64:11, pages 6591-6593.
Crossref
V Augelli, V Berardi, R Murri & L Schiavulli. (1988) Photoconductivity measurements as a tool for the evaluation of the density of states in amorphous silicon. Physica Scripta 38:2, pages 188-190.
Crossref
O. Salyk, F. Schauer, O. Zmeškal, P. Sládek, K. Zubík & J. Polcer. (1987) Amorphous hydrogenated silicon prepared by ion beam assisted reactive evaporation - preparation and basic properties. Journal of Non-Crystalline Solids 97-98, pages 1435-1438.
Crossref
G.J. Adriaenssens, P. Nagels & G. Seynhaeve. (1987) Steady-state photoconductivity in Bi- and Sb-modified Ge2Se7 glasses. Journal of Non-Crystalline Solids 97-98, pages 675-678.
Crossref
Frédéric Vaillant, Didier Jousse & Jean-Claude Bruyere. (1987) Respective influence of dangling bonds and band tails as recombination centers in amorphous semiconductors. Journal of Non-Crystalline Solids 97-98, pages 639-642.
Crossref
Yu. P. Drozhov. (1987) Photo- and Field-Induced Random Field in Relaxation Case Semiconductors. Physica Status Solidi (a) 102:2, pages 733-739.
Crossref
Yu. P. Drozhzhov. (1987) Charge density waves in a relaxation semiconductor. Soviet Physics Journal 30:6, pages 490-497.
Crossref
I. P. Zvyagin, I. A. Kurova, N. N. Ormont & K. B. Chitaya. (1987) Characteristics of recombination processes in doped hydrated amorphous silicon films. Soviet Physics Journal 30:6, pages 451-460.
Crossref
I.A. Kurova & I.P. Zvyagin. (1987) Dangling-bond recombination and photoconductivity of a-Si:H. Journal of Non-Crystalline Solids 90:1-3, pages 207-210.
Crossref
L.A. Balagurov, P. Mackus, E.M. Omeljanovsky & M.N. Starikov. (1987) Energetic spectrum of deep localized states of D-centers originated from silicon dangling bonus in a-Si:H. Journal of Non-Crystalline Solids 90:1-3, pages 107-109.
Crossref
R. Meaudre, A. Mezhoudi, M. Meaudre & J. Tardy. (1986) Photoelectronic and optical properties of B doped DC sputtered hydrogenated silicon nitride compounds. Journal of Non-Crystalline Solids 87:3, pages 321-342.
Crossref
F. Vaillant & D. Jousse. (1986) Recombination at dangling bonds and steady-state photoconductivity in a -Si:H . Physical Review B 34:6, pages 4088-4098.
Crossref
Hiroaki Okamoto, Hirotsugu Kida & Yoshihiro Hamakawa. (1985) Spectroscopic characterization of material and junction in amorphous silicon solar cells. Journal of Non-Crystalline Solids 77-78, pages 1441-1449.
Crossref
H. Yamagishi, H. Kida, T. Kamada, A. Tagliaferro, H. Okamoto & Y. Hamakawa. (1985) Analysis of light and current induced effects on μτ product and localized electronic states in a-Si:H. Journal of Non-Crystalline Solids 77-78, pages 413-416.
Crossref
H. Yamagishi, H. Kida, T. Kamada, H. Okamoto & Y. Hamakawa. (1985) Analysis of light and current induced effects in hydrogenated amorphous silicon. Applied Physics Letters 47:8, pages 860-862.
Crossref
M. Kunst & A. Werner. (1985) Comparative study of time-resolved conductivity measurements in hydrogenated amorphous silicon. Journal of Applied Physics 58:6, pages 2236-2241.
Crossref
I. Sakata & Y. Hayashi. (1985) Theoretical analysis of trapping and recombination of photogenerated carriers in amorphous silicon solar cells. Applied Physics A Solids and Surfaces 37:3, pages 153-164.
Crossref
M Hammam, G J Adriaenssens & W Grevendonk. (1985) Steady-state photoconductivity in amorphous arsenic selenide compounds. Journal of Physics C: Solid State Physics 18:10, pages 2151-2160.
Crossref
Guy J. Adriaenssens. (2011) Defect Levels in the Gap of Arsenic Selenide Glasses. MRS Proceedings 61.
Crossref

Reprints and Corporate Permissions

Please note: Selecting permissions does not provide access to the full text of the article, please see our help page How do I view content?

To request a reprint or corporate permissions for this article, please click on the relevant link below:

Order Reprints Request Corporate Permissions

Academic Permissions

Please note: Selecting permissions does not provide access to the full text of the article, please see our help page How do I view content?

Obtain permissions instantly via Rightslink by clicking on the button below:

Request Academic Permissions

If you are unable to obtain permissions via Rightslink, please complete and submit this Permissions form. For more information, please visit our Permissions help page.

Related research

People also read lists articles that other readers of this article have read.

Recommended articles lists articles that we recommend and is powered by our AI driven recommendation engine.

Cited by lists all citing articles based on Crossref citations.
Articles with the Crossref icon will open in a new tab.