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Philosophical Magazine B Volume 38, 1978 - Issue 4
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Original Articles

Defect states in amorphous silicon

S. R. Elliott Cavendish Laboratory, Madingley Road, Cambridge, England; R.S.R.E., St Andrews Road, Great Malvern, Worcestershire, England
Pages 325-334 | Received 12 Jun 1978, Accepted 23 Aug 1978, Published online: 01 Dec 2006

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M. Koóass & I. Póacsik. (1991) Short-term fatigue of photoluminescence in a-Si: H deposited at different temperatures. Philosophical Magazine B 63:5, pages 1079-1086.
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S. Yamasaki, J. Isoya & K. Tanaka. (1991) Optically induced metastable defects in undoped a-Si:H. Philosophical Magazine B 63:1, pages 163-173.
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J. Robertson. (1991) Electronic structure of silicon nitride. Philosophical Magazine B 63:1, pages 47-77.
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G. Schumm, K. Nitsch & G.H. Bauer. (1988) Gap-state distribution in a-Si:H by modulated photocurrent: Shallow-state-deep-state conversion and temperature shift of the electron-transport path. Philosophical Magazine B 58:4, pages 411-420.
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Martin Stutzmann. (1987) Weak bond-dangling bond conversion in amorphous silicon. Philosophical Magazine B 56:1, pages 63-70.
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Gautam Ganguly, Swati Ray & A.K. Barua. (1986) Photo-induced changes in the properties of undoped and boron-doped a-Si:H films. Philosophical Magazine B 54:4, pages 301-309.
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K. Shimakawa, Y. Yano & Y. Katsuma. (1986) Origin of the non-exponential photocurrent decay in amorphous semiconductors. Philosophical Magazine B 54:4, pages 285-299.
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J. Robertson. (1985) Defects in amorphous semiconductors. Philosophical Magazine B 51:2, pages 183-192.
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K.F. Heidemann, M. Grüner & E. te Kaat. (1984) Optical characterization of damage and concentration profiles in H ion implanted amorphous silicon. Radiation Effects 82:1-2, pages 103-131.
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John Robertson. (1983) Electronic structure of amorphous semiconductors. Advances in Physics 32:3, pages 361-452.
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A.R. Long, N. Balkan, W.R. Hogg & R.P. Ferrier. (1982) A.c. loss in sputtered hydrogenated amorphous germanium measurements at around liquid-nitrogen temperatures. Philosophical Magazine B 45:5, pages 497-518.
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K.F. Heidemann. (1981) Complex-refractive-index profiles of 4 MeV Ge ion-irradiation damage in silicon. Philosophical Magazine B 44:4, pages 465-485.
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P. Fazekas. (1981) Laser-induced phase transition in amorphous GeSe2 films. Philosophical Magazine B 44:4, pages 435-452.
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Eliezer Dovid Richmond. (1981) The homopolar amorphous surface Structural and electronic properties. Philosophical Magazine B 44:3, pages 333-341.
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JohnC. Knights & Gerald Lucovsky. (1980) Hydrogen in amorphous semiconductors. Critical Reviews in Solid State and Materials Sciences 9:3, pages 211-283.
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J. Robertson. (1980) Ionicity dependence of defect reactions and negative-U states in glasses, II. Philosophical Magazine B 41:6, pages 661-676.
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J. Robertson. (1980) Ionicity dependence of defect reactions and negative-U states in glasses, I. Philosophical Magazine B 41:6, pages 643-660.
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A.R. Long & N. Balkan. (1980) A.c. loss in amorphous germanium. Philosophical Magazine B 41:3, pages 287-305.
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B. Movaghar, B. Pohlmann & W. Schirmacher. (1980) Theory of electronic hopping transport in disordered materials. Philosophical Magazine B 41:1, pages 49-63.
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S.R. Elliott. (1979) Photo-induced changes in glow-discharge-deposited amorphous silicon: The Staebler-Wronski effect. Philosophical Magazine B 39:4, pages 349-356.
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