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Philosophical Magazine B Volume 38, 1978 - Issue 4
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Original Articles

Hole drift mobility in amorphous silicon

D. Allax Carnegie Laboratory of Physics, University of Dundee, Dundee, DD1 4HN, Scotland
Pages 381-392 | Received 30 Jul 1978, Accepted 24 Jul 1978, Published online: 01 Dec 2006

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W.E. Spear, P.G. Lecomber & D.M. Goldie. (1990) The investigation of charge transport in compensated amorphous silicon. Critical Reviews in Solid State and Materials Sciences 16:6, pages 389-402.
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M. Hoheisel & W. Fuhs. (1988) Drift mobility in n– and p–conducting a-Si: H. Philosophical Magazine B 57:3, pages 411-419.
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J.P. V. Drazin & J.C. Anderson. (1986) Photoadmittance in amorphous-silicon Schottky diodes. Philosophical Magazine B 54:1, pages 19-36.
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W.E. Spear & P.G. Le Comber. (1985) Transient mobility and lifetime studies in amorphous silicon and their interpretation. Philosophical Magazine B 52:3, pages 247-260.
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J.C. Anderson. (1983) Noise spectroscopy in amorphous silicon films. Philosophical Magazine B 48:1, pages 31-45.
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W. E. Spear & H. Steemers. (1983) The interpretation of drift mobility experiments on amorphous silicon. Philosophical Magazine B 47:5, pages L77-L82.
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W.E. Spear, Haifa Al-Ani & P.G. Le Comber. (1981) Photoconductivity studies of the mobility edge in amorphous silicon. Philosophical Magazine B 43:5, pages 781-796.
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A.J. Snell, W.E. Spear & P.G. Le Comber. (1981) The lifetime of injected carriers in amorphous silicon p–n junctions. Philosophical Magazine B 43:3, pages 407-417.
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J.M. Marshall & D. Allan. (1979) Hole carrier transport in amorphous silicon films. Philosophical Magazine B 40:1, pages 71-86.
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Articles from other publishers (30)

Gi Woong Shim, Woonggi Hong, Jun‐Hwe Cha, Jung Hwan Park, Keon Jae Lee & Sung‐Yool Choi. (2020) TFT Channel Materials for Display Applications: From Amorphous Silicon to Transition Metal Dichalcogenides. Advanced Materials 32:35, pages 1907166.
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. 2000. Ternary Compounds, Organic Semiconductors. Ternary Compounds, Organic Semiconductors 1 21 .
. 2000. Ternary Compounds, Organic Semiconductors. Ternary Compounds, Organic Semiconductors 1 11 .
. 2000. Ternary Compounds, Organic Semiconductors. Ternary Compounds, Organic Semiconductors 1 2 .
D. Bloom & S. W. S. McKeever. (1997) Temperature dependence of electron mobility in Bi12GeO20 and Bi12SiO20 using the time-of-flight technique. Journal of Applied Physics 82:1, pages 249-258.
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G. Marcano, A. R. Zanatta & I. Chambouleyron. (1994) Photoconductivity of intrinsic and nitrogen-doped hydrogenated amorphous germanium thin films. Journal of Applied Physics 75:9, pages 4662-4667.
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Sharad Nikum, Milan Banerjee, P.B. Vidyasagar, S.V. Bhoraskar & Suvarna Babras. (1991) Tail states in hydrogenated amorphous silicon studied by thermoluminescence. Solid State Communications 80:8, pages 563-566.
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B.-G. Yoon, H. Fritzsche, M. Q. Tran & D.-Z. Chi. (2011) Thermal Quenching of Photoconductivity and the Sign of Photocarriers in Doped a-Si:H. MRS Proceedings 219.
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W.K. Choi, S. Reynolds, J. Hajto, S.M. Gage, A.E. Owen, A.J. Snell, I.M. Flanagan, M.J. Rose, F.J. Djamdji, P.G. LeComber & W.E. Spear. (1987) Pre-formed J-V and C-V characteristics of a-Si:H p+ ni junctions. Journal of Non-Crystalline Solids 97-98, pages 1331-1334.
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G. Campet, Sun Zhi Wen, C. Puprichitkun, J. P. Manaud & J. Claverie. (1987) Physical Properties of (n+)SrTiO3 Films. Physica Status Solidi (a) 103:1, pages 175-184.
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L?szl? T?th & J?nos Gazs?. (1987) The effects of sample capacitance and light intensity on the time-of-flight signal in a-Si:H. Journal of Non-Crystalline Solids 90:1-3, pages 187-190.
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P. Singh & E. A. Fagen. (1986) Field-effect density of states in a -(Si,Ge):H films . Journal of Applied Physics 60:2, pages 692-695.
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Toshio Nishida & Yasushi Hoshino. (1986) Space‐charge effect on hole transport in resistive hydrogenated amorphous silicon. Journal of Applied Physics 59:7, pages 2467-2470.
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H. Kakinuma, S. Nishikawa, T. Watanabe & K. Nihei. (1985) Boron-doping effects on the electrical properties of high-deposition rate amorphous silicon. Journal of Applied Physics 58:6, pages 2413-2415.
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Hideharu Matsuura, Akihisa Matsuda, Hideyo Okushi, Tetsuhiro Okuno & Kazunobu Tanaka. (1984) Metal-semiconductor junctions and amorphous-crystalline heterojunctions using B-doped hydrogenated amorphous silicon. Applied Physics Letters 45:4, pages 433-435.
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Ch. Longeaud, J. Baixeras, E. Arene & D. Mencaraglia. (1984) Influence of hydrogen on electronic transport in dc triode sputtered amorphous silicon. Journal of Applied Physics 55:6, pages 1508-1512.
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T. Tiedje. 1984. Hydrogenated Amorphous Silicon - Electronic and Transport Properties. Hydrogenated Amorphous Silicon - Electronic and Transport Properties 207 238 .
Junji Shirafuji, Hirosuke Matsui & Yoshio Inuishi. (1983) Mechanism of dispersive transport in hydrogenated amorphous silicon. Journal of Applied Physics 54:7, pages 3983-3986.
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P. B. Kirby & William Paul. (1982) Carrier propagation in sputtered -Si:H . Physical Review B 25:8, pages 5373-5383.
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D.E. Carlson. (1981) Amorphous silicon. Progress in Crystal Growth and Characterization 4:3, pages 173-193.
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John D. Joannopoulos & Douglas C. Allan. 1981. Festkörperprobleme 21. Festkörperprobleme 21 167 190 .
W. E. Spear. 1981. Photovoltaic Solar Energy Conference. Photovoltaic Solar Energy Conference 302 308 .
P. G. LeComber. 1981. Fundamental Physics of Amorphous Semiconductors. Fundamental Physics of Amorphous Semiconductors 46 55 .
J. Mort, S. Grammatica, J.C. Knights & R. Lujan. (1980) Studies of hydrogenated amorphous silicon by xerographic discharge techniques. Solar Cells 2:4, pages 451-459.
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N F Mott. (1980) States in the gap in non-crystalline semiconductors. Journal of Physics C: Solid State Physics 13:30, pages 5433-5471.
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J. Mort, I. Chen, A. Troup, M. Morgan, J. Knights & R. Lujan. (1980) Nongeminate Recombination of -Si: H . Physical Review Letters 45:16, pages 1348-1351.
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R. Basset & P. Viktorovitch. (1979) Spectral response of metal—amorphous silicon barriers and hole drift mobility. Physica Status Solidi (a) 56:2, pages 495-499.
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M.M. Alkaisi & M.J. Thompson. (1979) The temperature dependence of the characteristics of sputtered a-SiH solar cells. Solar Cells 1:1, pages 91-98.
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R H Williams, R R Varma, W E Spear & P G Le Comber. (1979) The Fermi level position in doped amorphous silicon. Journal of Physics C: Solid State Physics 12:5, pages L209-L213.
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P. G. LeComber & W. E. Spear. 1985. Amorphous Semiconductors. Amorphous Semiconductors 251 285 .

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