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Philosophical Magazine B Volume 38, 1978 - Issue 5
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Original Articles

VII. The Hall effect in inversion layers

C. J. Adkins Cavendish Laboratory, Madingley Road, Cambridge, CB3 0HE, England
Pages 535-548 | Received 20 Jul 1978, Accepted 20 Aug 1978, Published online: 01 Dec 2006

Citations (15)

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Read on this site (2)

N.F. Mott. (1978) VIII. Some comments and suggestions on the Hall effect in non-crystalline systems. Philosophical Magazine B 38:5, pages 549-553.
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J.P. Thompson. (1978) VI. Is the Hall effect in silicon inversion layers consistent with macroscopic inhomogeneities?. Philosophical Magazine B 38:5, pages 527-533.
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Articles from other publishers (13)

J. A. Garrido, T. Heimbeck & M. Stutzmann. (2005) Temperature-dependent transport properties of hydrogen-induced diamond surface conductive channels. Physical Review B 71:24.
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J. Hegarty & M. D. Sturge. 1995. Confined Electrons and Photons. Confined Electrons and Photons 815 826 .
S.C. Jain, K.H. Winters & R. Van Overstraeten. 1990. 103 154 .
J. Gebhardt, G. Nimtz, B. Schlicht & J. P. Stadler. (1985) Viscous-liquid-like electron state in the dilute-metal-like n -type Te . Physical Review B 32:8, pages 5449-5452.
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M. Shayegan, H. D. Drew, D. A. Nelson & P. M. Tedrow. (1985) Electron correlation effects on the magnetic-field-induced metal-insulator transition in Te . Physical Review B 31:9, pages 6123-6126.
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R Balian, R Maynard & G ToulouseROGER BALIAN, ROGER MAYNARD & GERARD TOULOUSE. 1984. Ill-Condensed Matter. Ill-Condensed Matter 483 562 .
Tsuneya Ando, Alan B. Fowler & Frank Stern. (1982) Electronic properties of two-dimensional systems. Reviews of Modern Physics 54:2, pages 437-672.
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C J Adkins & R H Koch. (1982) Noise in inversion layers near the metal-insulator transition. Journal of Physics C: Solid State Physics 15:8, pages 1829-1839.
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N. Hoshi & S. Kawaji. (1982) Anderson localization in silicon MOS inversion layers in a strongly localized regime. Surface Science 113:1-3, pages 189-193.
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H H J M Niederer, A P M Mattey & M J Sparnaay. (1981) Thermally activated conductance of a silicon inversion layer by electrons excited above the mobility edge. Journal of Physics C: Solid State Physics 14:28, pages 4177-4184.
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N F Mott. (1980) States in the gap in non-crystalline semiconductors. Journal of Physics C: Solid State Physics 13:30, pages 5433-5471.
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C. J. Adkins. 1980. The Hall Effect and Its Applications. The Hall Effect and Its Applications 355 373 .
C J Adkins. (1979) Application of effective-medium theory to inversion layers. Journal of Physics C: Solid State Physics 12:16, pages 3395-3400.
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