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Philosophical Magazine B Volume 48, 1983 - Issue 2
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Original Articles

A theory of the admittance of an amorphous silicon Schottky barrier

I. W. Archibald Department of Applied Physics and Electronics, University of Durham, South Road, Durham, England
&
R. A. Abram Department of Applied Physics and Electronics, University of Durham, South Road, Durham, England
Pages 111-125 | Received 12 Jan 1983, Accepted 12 Mar 1983, Published online: 20 Aug 2006

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F. Di Quarto & M. Santamaria. (2004) Semiconductor electrochemistry approach to passivity and passivity breakdown of metals and metallic alloys. Corrosion Engineering, Science and Technology 39:1, pages 71-81.
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I.W. Archibald & R.A. Abram. (1987) Experimental determination of the density of gap states in amorphous silicon by Schottky barrier admittance. Philosophical Magazine B 56:4, pages 429-441.
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I.W. Archibald & R.A. Abram. (1986) More theory of the admittance of an amorphous silicon Schottky barrier. Philosophical Magazine B 54:5, pages 421-438.
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J.P. V. Drazin & J.C. Anderson. (1986) Photoadmittance in amorphous-silicon Schottky diodes. Philosophical Magazine B 54:1, pages 19-36.
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Articles from other publishers (28)

F. Di Quarto, F. Di Franco, M. Santamaria & F. La Mantia. 2018. Encyclopedia of Interfacial Chemistry. Encyclopedia of Interfacial Chemistry 75 92 .
F. Di Quarto, F. Di Franco, S. Miraghaei, M. Santamaria & F. La Mantia. (2017) The Amorphous Semiconductor Schottky Barrier Approach to Study the Electronic Properties of Anodic Films on Ti. Journal of The Electrochemical Society 164:9, pages C516-C525.
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F.La Mantia, M. Fan, J. Stojadinović, M. Santamaria, S. Miraghaei & F.Di Quarto. (2015) Assessment on the use of the amorphous semiconductor theory for the analysis of oxide films. Electrochimica Acta 179, pages 460-468.
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Jean-Paul Kleider, José Alvarez, Aurore Brézard-Oudot, Marie-Estelle Gueunier-Farret & Olga Maslova. (2015) Revisiting the theory and usage of junction capacitance: Application to high efficiency amorphous/crystalline silicon heterojunction solar cells. Solar Energy Materials and Solar Cells 135, pages 8-16.
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Candace K. Chan, Harun Tüysüz, Artur Braun, Chinmoy Ranjan, Fabio La Mantia, Benjamin K. Miller, Liuxian Zhang, Peter A. Crozier, Joel A. Haber, John M. Gregoire, Hyun S. Park, Adam S. Batchellor, Lena Trotochaud & Shannon W. Boettcher. 2016. Solar Energy for Fuels. Solar Energy for Fuels 253 324 .
M. Anutgan & I. Atilgan. (2013) Forward bias capacitance spectroscopy for characterization of semiconductor junctions: Application to a-Si:H p-i-n diode. Applied Physics Letters 102:15, pages 153504.
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Fabio La Mantia, Jelena Stojadinović, Monica Santamaria & Francesco Di Quarto. (2012) Dynamic Response of Thin-Film Semiconductors to AC Voltage Perturbations. ChemPhysChem 13:12, pages 2910-2918.
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F. La Mantia, H. Habazaki, M. Santamaria & F. Di Quarto. (2010) A critical assessment of the Mott-Schottky analysis for the characterisation of passive film-electrolyte junctions. Russian Journal of Electrochemistry 46:11, pages 1306-1322.
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F. La Mantia, M. Santamaria, F. Di Quarto & H. Habazaki. (2010) Physicochemical Characterization of Thermally Aged Anodic Films on Magnetron-Sputtered Niobium. Journal of The Electrochemical Society 157:7, pages C258.
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Francesco Di Quarto, Fabio La Mantia & Monica Santamaria. 2009. Modern Aspects of Electrochemistry, No. 46. Modern Aspects of Electrochemistry, No. 46 231 316 .
A. G. Muñoz & G. Staikov. (2006) Electrodeposition of metals on anodized thin Nb films. Journal of Solid State Electrochemistry 10:5, pages 329-336.
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F. Di Quarto, F. La Mantia & M. Santamaria. (2005) Physicochemical characterization of passive films on niobium by admittance and electrochemical impedance spectroscopy studies. Electrochimica Acta 50:25-26, pages 5090-5102.
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F. Di Quarto, S. Piazza, M. Santamaria & C. Sunseri. 2002. Handbook of Thin Films. Handbook of Thin Films 373 414 .
M Schmeits. (1997) Small-signal analysis of semiconductor heterojunctions with interacting interface states. Semiconductor Science and Technology 12:10, pages 1217-1225.
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S. Piazza, L. Calá, C. Sunseri & F. Di Quarto. (2010) Influence of the crystallization process on the photoelectrochemical behaviour of anodic TiO 2 films . Berichte der Bunsengesellschaft für physikalische Chemie 101:6, pages 932-942.
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D M Taylor & H L Gomes. (1995) Electrical characterization of the rectifying contact between aluminium and electrodeposited poly(3-methylthiophene). Journal of Physics D: Applied Physics 28:12, pages 2554-2568.
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M.J. Esplandiu, L.B. Avalle & V.A. Macagno. (1995) Characterization of hafnium oxide films modified by Pt doping. Electrochimica Acta 40:16, pages 2587-2593.
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Carlos da Fonseca, Mário Guerreiro Ferreira & Manuel da Cunha Belo. (1994) Modelling of the impedance behaviour of an amorphous semiconductor schottky barrier in high depletion conditions. Application to the study of the titanium anodic oxide/electrolyte junction. Electrochimica Acta 39:14, pages 2197-2205.
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S.R. Dhariwal & B.M. Deoraj. (1993) Contribution of bulk states to the depletion layer admittance. Solid-State Electronics 36:8, pages 1165-1174.
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F. Di Quarto, V.O. Aimiuwu, S. Piazza & C. Sunseri. (1991) Amorphous semiconductor—electrolyte junction. Energetics at the a-WO3—electrolyte junction. Electrochimica Acta 36:11-12, pages 1817-1822.
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F. Di Quarto, S. Piazza & C. Sunseri. (1990) Amorphous semiconductor—electrolyte junction. Impedance study on the a-Nb2 O5—electrolyte junction. Electrochimica Acta 35:1, pages 99-107.
Crossref
I. Balberg. (2011) A Study of the State Distribution in Various a-Si:H Materials by a New Capacitance Method. MRS Proceedings 95.
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Francesco Di Quarto, Carmelo Sunseri & Salvatore Piazza. (2010) Amorphous Semiconductor‐Electrolyte Junction. A New Interpretation of the Impedance Data of Amorphous Semiconducting Films on Metals. Berichte der Bunsengesellschaft für physikalische Chemie 90:6, pages 549-555.
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I. Balberg. (1985) Relation between distribution of states and the space-charge-region capacitance in semiconductors. Journal of Applied Physics 58:7, pages 2603-2616.
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C. E. Michelson, A. V. Gelatos & J. D. Cohen. (1985) Drive-level capacitance profiling: Its application to determining gap state densities in hydrogenated amorphous silicon films. Applied Physics Letters 47:4, pages 412-414.
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J. D. Cohen & D. V. Lang. 1985. Tetrahedrally-Bonded Amorphous Semiconductors. Tetrahedrally-Bonded Amorphous Semiconductors 299 314 .
T. Tiedje. 1985. Physics of Disordered Materials. Physics of Disordered Materials 461 467 .
J. Kanicki, C.M. Ransom, W. Bauhofer, T.I. Chappell & B.A. Scott. (1984) Transport properties and defect states of a-Si:H grown by HOMOCVD. Journal of Non-Crystalline Solids 66:1-2, pages 51-58.
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