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Letters section

The conductivity near a mobility edge

Pages L75-L82 | Received 14 Feb 1984, Accepted 08 May 1984, Published online: 02 Sep 2006

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Read on this site (7)

N.F. Mott. (1990) High temperature superconductivity; The spin polaron theory. Contemporary Physics 31:6, pages 373-385.
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N.F. Mott. (1990) The entropy of the superconducting transition in high-T c materials. Philosophical Magazine Letters 62:1, pages 37-40.
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J.R. Meyer and & F.J. Bartoli. (1987) Mobility edge in Si:P. Philosophical Magazine Letters 56:2, pages 69-77.
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M. Kaveh & N.F. Mott. (1987) The critical conductance. Philosophical Magazine B 55:1, pages 9-16.
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M. Kaveh. (1985) Quantum diffusion and localization in disordered systems. Philosophical Magazine B 51:4, pages 453-464.
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N.F. Mott. (1985) The minimum metallic conductivity. International Reviews in Physical Chemistry 4:1, pages 1-18.
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N.F. Mott. (1984) Metal-insulator transitions. Philosophical Magazine B 50:2, pages 161-167.
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Articles from other publishers (20)

Peter P. Edwards, Roy L. Johnston, Friedrich Hensel, C.N.R. Rao & David P. Tunstall. 1999. 229 338 .
A. Fedotov, F. Komarov & V. Yankovski. (1994) Metal-nonmetal transition in niobium thin layers implanted by nitrogen ions. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 90:1-4, pages 378-382.
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Imre Varga, János Pipek & Béla Vasvári. (1992) Power-law localization at the metal-insulator transition by a quasiperiodic potential in one dimension. Physical Review B 46:8, pages 4978-4981.
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A. Ferreira da Silva. (1991) Spin susceptibility and effective mass in shallow doubly doped semiconductor systems. Physical Review B 43:8, pages 6551-6553.
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Vipin Srivastava. (1990) Confluence of extended and localized states: Implications on the Mott-Cohen-Fritzsche-Ovshinsky model. Physical Review B 41:9, pages 5667-5673.
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M C Maliepaard, M Pepper, R Newbury & G Hill. (1989) The metal-insulator transition in n-type In 0.53 Ga 0.47 As . Journal of Physics: Condensed Matter 1:29, pages 4805-4815.
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N.F. Mott. (1989) Doped antiferromagnetic insulators : a model for high temperature superconductivity. Journal de Physique 50:18, pages 2811-2822.
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Serghey V. Vonsovsky & Mikhail I. KatsnelsonSerghey V. Vonsovsky & Mikhail I. Katsnelson. 1989. Quantum Solid-State Physics. Quantum Solid-State Physics 245 395 .
R. Meaudre & M. Meaudre. (1987) Influence of metastable dangling bonds and donors on the D.C. conductivity of hydrogenated amorphous silicon. Journal of Non-Crystalline Solids 97-98, pages 799-802.
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N Mott. (1987) The mobility edge since 1967. Journal of Physics C: Solid State Physics 20:21, pages 3075-3102.
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R. Meaudre. (1987) Some problems encountered during the measurement of the activation energy of dark conductivity of undoped hydrogenated amorphous silicon films. Thin Solid Films 148:2, pages 121-125.
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Nevill Mott. 1987. Disordered Semiconductors. Disordered Semiconductors 3 10 .
M I Katsnelson & A S Shcherbakov. (1986) Pseudogap formation and coexistence of localised and extended states in disordered transition metal alloys. Journal of Physics C: Solid State Physics 19:26, pages 5173-5185.
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D J Newson & M Pepper. (1986) Critical conductivity at the magnetic-field-induced metal-insulator transition in n-GaAs and n-InSb. Journal of Physics C: Solid State Physics 19:21, pages 3983-3990.
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A Ferreira da Silva. (1986) Metal-Non-metal Transition in the Double-Donors Si:P, As and Si:P, Sb: A Simple Approach. Physica Scripta T14, pages 27-28.
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N.F Mott. (1985) Pre-exponential factor in the conductivity of liquid and amorphous semiconductors. Journal of Non-Crystalline Solids 77-78, pages 115-120.
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H Dubois, G Biskupski, J P Spriet & A Briggs. (1985) Conductivity and mobility in n-InP at very low temperatures: new arguments for a sharp M-I transition. Journal of Physics C: Solid State Physics 18:9, pages L195-L200.
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Nevill Mott. 1985. Electron–Electron Interactions in Disordered Systems. Electron–Electron Interactions in Disordered Systems vii ix .
N.F. Mott. (1985) Is there ever a minimum metallic conductivity?. Solid-State Electronics 28:1-2, pages 57-59.
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Moshe Kaveh. 1985. Localization and Metal-Insulator Transitions. Localization and Metal-Insulator Transitions 311 322 .

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