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Philosophical Magazine B Volume 49, 1984 - Issue 1
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Letters section

On the analysis of space-charge-limited current—voltage characteristics and the density of states in amorphous silicon

J. W. Orton Philips Research Laboratories, Redhill, Surrey, RH1 5HA, England
Pages L1-L7 | Received 14 Oct 1983, Accepted 31 Oct 1983, Published online: 01 Dec 2006

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Read on this site (5)

M. Meaudre & R. Meaudre. (1987) Influence of nitrogen incorporation on the density of gap states in amorphous hydrogenated silicon. Philosophical Magazine B 55:3, pages 417-426.
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F.Z. Bathaei & J.C. Anderson. (1987) Electrical noise measurements in intrinsic amorphous silicon. Philosophical Magazine B 55:1, pages 87-100.
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J.C. Anderson & Hengqun Guo. (1986) Metal-semiconductor contacts on hydrogenated amorphous silicon films. Philosophical Magazine B 54:4, pages 317-329.
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J.P. V. Drazin & J.C. Anderson. (1986) Photoadmittance in amorphous-silicon Schottky diodes. Philosophical Magazine B 54:1, pages 19-36.
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J.W. Orton & M.J. Powell. (1984) The relationship between space-charge-limited current and density of states in amorphous silicon. Philosophical Magazine B 50:1, pages 11-21.
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Articles from other publishers (4)

P. N. Krylov, A. S. Alalykin, E. A. Durman, R. M. Zakirova & I. V. Fedotova. (2019) Effect of Ion-Beam Processing during RF Magnetron Sputtering on the properties of ZnO Films. Semiconductors 53:11, pages 1457-1464.
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Gennady Sh. Gildenblat, S. Nakagawa & Vladimir Bolkhovsky. (1989) Theory of space-charge-limited currents in materials with an exponential energy distribution of capture centers. Solid-State Electronics 32:9, pages 717-726.
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K. Shimakawa & Y. Katsuma. (1986) Extended step-by-step analysis in space-charge-limited current: Application to hydrogenated amorphous silicon. Journal of Applied Physics 60:4, pages 1417-1421.
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F. Z. Bathaei & J. C. Anderson. (2011) Frequency-Dependent Noise in Hydrogenated Amorphous Silicon. MRS Proceedings 70.
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