78
Views
80
CrossRef citations to date
0
Altmetric
Original Articles

Optical absorption edge of hydrogenated amorphous silicon studied by photoacoustic spectroscopy

Pages 79-97 | Received 18 Aug 1986, Accepted 11 Nov 1986, Published online: 20 Aug 2006

Keep up to date with the latest research on this topic with citation updates for this article.

Read on this site (5)

Masaaki Yamaguchi & Kazuo Morigaki. (1999) Effect of hydrogen dilution on the optical properties of hydrogenated amorphous silicon prepared by plasma deposition. Philosophical Magazine B 79:3, pages 387-405.
Read now
Hitoe Habuchi, Erika Nishimura, Shoji Nitta & Shuichi Nonomura. (1997) Photoluminescence Spectra of Fullerene Films. Fullerene Science and Technology 5:1, pages 231-241.
Read now
W.B. Jackson, C.C. Tsai & C. Doland. (1991) Effect of hydrogen on disorder in amorphous silicon. Philosophical Magazine B 64:5, pages 611-622.
Read now
S. Yamasaki, J. Isoya & K. Tanaka. (1991) Optically induced metastable defects in undoped a-Si:H. Philosophical Magazine B 63:1, pages 163-173.
Read now
M. Stutzmann. (1989) The defect density in amorphous silicon. Philosophical Magazine B 60:4, pages 531-546.
Read now

Articles from other publishers (75)

Mounir Kassmi. 2023. Application and Characterization of Rubber Materials. Application and Characterization of Rubber Materials.
Yoshio Kawamata, Daisuke Ono, Hiroshi Ito, Hiroyuki Nikkuni & Mikio Ito. (2022) Film structure and optical characteristics of a-Si:H prepared with a rotary table type layer-by-layer sputtering method for application in short-wave near-infrared filters. Optical Materials Express 12:11, pages 4223.
Crossref
Yoshio KAWAMATA, Hiroshi ITO, Hiroyuki NIKKUNI & Mikio ITO. (2021) Deposition Temperature Dependence of Optical Properties of a-Si:H for Short-wave Near-infrared Filter by DC SputteringDCスパッタリングによる短波近赤外線フィルター用a-Si:Hの光学特性の成膜温度依存性. Vacuum and Surface Science 64:8, pages 375-381.
Crossref
M. Kassmi, R. Samti, W. Dimassi & M. Amlouk. (2021) Optical properties of material compositions in hydrogenated amorphous silicon through the degree of passivation. Journal of Non-Crystalline Solids 562, pages 120771.
Crossref
Yoshio KAWAMATA, Hiroshi ITO, Hiroyuki NIKKUNI & Mikio ITO. (2020) Basic Characteristics of a-Si:H by dc Sputtering and Application to Bandpass Filter for Shortwave Near Infrared, and Durability EvaluationDCスパッタリングによるa-Si:Hの基礎特性と短波近赤外用バンドパスフィルターへの応用及び耐久性評価. Vacuum and Surface Science 63:9, pages 482-487.
Crossref
Jonathan Linke, Johannes Rinder, Giso Hahn & Barbara Terheiden. (2020) Correlation between the optical bandgap and the monohydride bond density of hydrogenated amorphous silicon. Journal of Non-Crystalline Solids: X 5, pages 100044.
Crossref
Merid Legesse, Michael Nolan & Giorgos Fagas. (2014) A first principles analysis of the effect of hydrogen concentration in hydrogenated amorphous silicon on the formation of strained Si-Si bonds and the optical and mobility gaps. Journal of Applied Physics 115:20.
Crossref
Merid Legesse, Michael Nolan & Giorgos Fagas. (2013) Revisiting the Dependence of the Optical and Mobility Gaps of Hydrogenated Amorphous Silicon on Hydrogen Concentration. The Journal of Physical Chemistry C 117:45, pages 23956-23963.
Crossref
Satoshi Yasuno, Takashi Kita, Shinya Morita, Toshihiro Kugimiya, Kazushi Hayashi & Shingo Sumie. (2012) Transient photoconductivity responses in amorphous In-Ga-Zn-O films. Journal of Applied Physics 112:5.
Crossref
Alexander V. Kolobov & Junji TominagaAlexander V. Kolobov & Junji Tominaga. 2012. Chalcogenides. Chalcogenides 49 63 .
Kazuro Murayama, Wataru Sano, Taichi Ito & Chisato Ogiwara. (2008) Excitation energy evolution of photoluminescence spectrum in amorphous hydrogenated silicon. Solid State Communications 146:7-8, pages 315-319.
Crossref
Kazuro Murayama, Takuya Hoshino & Chisato Ogiwara. (2008) Temperature dependence of hopping‐edge in amorphous hydrogenated silicon. physica status solidi c 5:3, pages 772-776.
Crossref
Kazuro Murayama, Tatuya Fujisaki & Yukio Nomura. (2008) Electron hopping‐randomwalk at localized band tail states with exponential density in amorphous hydrogenated silicon. physica status solidi c 5:3, pages 777-781.
Crossref
A. Ben Othman, M. Daouahi, J. Henocque, K. Zellama & H. Bouchriha. (2004) Effect of the hydrogen dilution on the short-range and intermediate-range-order in radiofrequency magnetron sputtered hydrogenated amorphous silicon films. The European Physical Journal Applied Physics 28:1, pages 19-26.
Crossref
S. Gupta, G. Morell & B.R. Weiner. (2004) Role of H in hot-wire deposited a-Si:H films revisited: optical characterization and modeling. Journal of Non-Crystalline Solids 343:1-3, pages 131-142.
Crossref
Yue Kuo. 2004. Thin Film Transistors. Thin Film Transistors 203 239 .
Masaaki Yamaguchi, Chisato Ogihara & Kazuo Morigaki. (2003) Optical absorption of nanometer-sized band-edge-modulated amorphous silicon–nitrogen films. Materials Science and Engineering: B 97:2, pages 135-140.
Crossref
N. Yoshida, Y. Sobajima, H. Kamiguchi, T. Iida, T. Hatano, H. Mori, Y. Nakae, M. Itoh, A. Masuda, H. Matsumura & S. Nonomura. (2002) Photoinduced volume expansion and contraction in a-Si:H films. Journal of Non-Crystalline Solids 299-302, pages 516-520.
Crossref
Minoru Kumeda, Hiroshi Itoh, Norio Shitakata & Tatsuo Shimizu. (2011) Relation between Erbium Photoluminescence and Dangling-Bond Defects in a-Si:H. MRS Proceedings 664.
Crossref
Alexander V. Kolobov & Kazunobu Tanaka. 2001. Handbook of Advanced Electronic and Photonic Materials and Devices. Handbook of Advanced Electronic and Photonic Materials and Devices 47 90 .
Takahide Umeda, Satoshi Yamasaki, Junichi Isoya & Kazunobu Tanaka. (2000) Microscopic origin of light-induced ESR centers in undoped hydrogenated amorphous silicon. Physical Review B 62:23, pages 15702-15710.
Crossref
Tong Li, Jerzy Kanicki, Wei Kong & Fred L. TerryJr.Jr.. (2000) Interference fringe-free transmission spectroscopy of amorphous thin films. Journal of Applied Physics 88:10, pages 5764-5771.
Crossref
K. Saito & A. J. Ikushima. (2000) Absorption edge in silica glass. Physical Review B 62:13, pages 8584-8587.
Crossref
Tatiana Globus, Gautam Ganguly & Pere Roca i Cabarrocas. (2000) Optical characterization of hydrogenated silicon thin films using interference technique. Journal of Applied Physics 88:4, pages 1907-1915.
Crossref
A. J. Ikushima, T. Fujiwara & K. Saito. (2000) Silica glass: A material for photonics. Journal of Applied Physics 88:3, pages 1201-1213.
Crossref
John Robertson. (2000) Deposition mechanism of hydrogenated amorphous silicon. Journal of Applied Physics 87:5, pages 2608-2617.
Crossref
John Robertson. (2011) Growth Processes of Hydrogenated Amorphous Silicon. MRS Proceedings 609.
Crossref
J. Robertson & M.J. Powell. (1999) Deposition, defect and weak bond formation processes in a-Si:H. Thin Solid Films 337:1-2, pages 32-36.
Crossref
Sadao AdachiSadao Adachi. 1999. Optical Constants of Crystalline and Amorphous Semiconductors. Optical Constants of Crystalline and Amorphous Semiconductors 663 672 .
Taro Toyoda & Satoshi Shimamoto. (1998) Photoacoustic spectroscopy of ceramic ZnO doped with Bi2O3. Materials Science and Engineering: B 54:1-2, pages 29-32.
Crossref
J Robertson, C.W Chen, M.J Powell & S.C Deane. (1998) Local hydrogen reactions of H2* in a-Si:H. Journal of Non-Crystalline Solids 227-230, pages 138-142.
Crossref
Keiji Maeda & Ikurou Umezu. (1998) Defect formation mechanism during plasma enhanced chemical vapor deposition of undoped a-Si:H. Journal of Non-Crystalline Solids 227-230, pages 43-47.
Crossref
J Robertson & M J Powell. (2011) Deposition, Defect and Weak Bond Formation Processes in a-Si:H. MRS Proceedings 507.
Crossref
T. Toyama, Y. Kotani, A. Shimode, K. Shimizu & H. Okamoto. (2011) Temperature Dependence of Electroluminescence from Nanocrystalline Silicon thin Films. MRS Proceedings 507.
Crossref
Keiji Maeda, Ikurou Umezu & Hotaka Ishizuka. (1997) Defect formation during deposition of undoped a-Si:H by rf glow discharge. Physical Review B 55:7, pages 4323-4331.
Crossref
Keiji Maeda & Ikurou Umezu. (2011) Defect Formation Mechanism During PECVD of a-Si:H. MRS Proceedings 467.
Crossref
Andreas Mandelis. 1997. Handbook of Optical Constants of Solids. Handbook of Optical Constants of Solids 59 97 .
A. K. Ghosh & B. K. Chaudhuri. (1996) Photoacoustic spectroscopic estimation of optical absorption and thermal diffusivity of amorphous Ge15As x Se85− x . Journal of Applied Physics 80:9, pages 5292-5296.
Crossref
A. K. Ghosh & B. K. Chaudhuri. (1996) Photoacoustic determination of the optical and thermal properties of isovalent S-substituted polymeric Ge–Se system. Journal of Applied Physics 79:2, pages 723-728.
Crossref
H. Oheda. (1995) Photoluminescence mechanism in hydrogenated amorphous silicon studied by frequency-resolved spectroscopy. Physical Review B 52:23, pages 16530-16541.
Crossref
G. Morell, R. S. Katiyar, S. Z. Weisz, H. Jia, J. Shinar & I. Balberg. (1995) Raman study of the network disorder in sputtered and glow discharge a -Si:H films . Journal of Applied Physics 78:8, pages 5120-5125.
Crossref
Stephen K. O’Leary, Stefan Zukotynski & John M. Perz. (1995) Hydrogen-induced quantum confinement in amorphous silicon. Journal of Applied Physics 78:6, pages 4282-4284.
Crossref
A. K. Ghosh, K. K. Som, S. Chatterjee & B. K. Chaudhuri. (1995) Photoacoustic spectroscopic study of energy gap, optical absorption, and thermal diffusivity of polycrystalline (0≤ x ≤1) alloys . Physical Review B 51:8, pages 4842-4848.
Crossref
H. Kishida, H. Tachibana, M. Matsumoto & Y. Tokura. (1994) Optical spectra of Si/Ge-network copolymers: [Si(C6H13)]1− x [Ge(C6H13)] x . Applied Physics Letters 65:11, pages 1358-1360.
Crossref
M. Okamura & S. Suzuki. (1994) Infrared photodetection using a-Si:H photodiode. IEEE Photonics Technology Letters 6:3, pages 412-414.
Crossref
Jong-Hwan Yoon. (1993) Origin of saturated light-induced defect density in hydrogenated amorphous silicon. Journal of Applied Physics 74:3, pages 1838-1843.
Crossref
A. Abd El-Mongy. (1993) The Density of Gap States in a-Si: H. Physica Status Solidi (a) 136:1, pages 113-117.
Crossref
Atsuko Yamaguchi, Tetsuya Tada & Toshiyuki Ninomiya. (1993) Time-Resolved Spectroscopy of Photoluminescence in Hydrogenated Amorphous Silicon. Journal of the Physical Society of Japan 62:1, pages 332-339.
Crossref
D J Dunstan. (1992) On the measurement of absolute radiative and non-radiative recombination efficiencies in semiconductor lasers. Journal of Physics D: Applied Physics 25:12, pages 1825-1828.
Crossref
S. Q. Gu, M. E. Raikh & P. C. Taylor. (1992) Photoluminescence excitation spectroscopy in a -Si:H: Evidence for phonon-assisted absorption . Physical Review Letters 69:18, pages 2697-2700.
Crossref
G. Amato & F. Fizzotti. (1992) Gap-states distribution in amorphous-silicon films as obtained by photothermal deflection spectroscopy. Physical Review B 45:24, pages 14108-14113.
Crossref
G. Amato, F. Giorgis & R. Spagnolo. (1992) A deconvolution procedure for photothermal and photoconductive spectra of amorphous silicon films. Journal of Applied Physics 71:7, pages 3479-3485.
Crossref
G. Amato, F. Fizzotti, C. Manfredotti, P. Menna, G. Nobile & R. Spagnolo. (2006) Optical and Structural Properties of Amorphous Silicon Obtained by Low Pressure Chemical Vapour Deposition. physica status solidi (b) 170:1, pages 119-128.
Crossref
S.Q. Gu & P.C. Taylor. (2011) Subband Recombination in a-Si:H. MRS Proceedings 258.
Crossref
G. Amato, G. Benedetto, L. Boarino & R. Spagnolo. 1992. Photoacoustic and Photothermal Phenomena III. Photoacoustic and Photothermal Phenomena III 408 410 .
A. Asano & M. Stutzmann. (1991) Depth profiling of nonuniform optical absorption in thin films: Application to hydrogenated amorphous silicon. Journal of Applied Physics 70:9, pages 5025-5034.
Crossref
J. H. Yoon, X. Xu, M. Kotharay & S. Wagner. (2011) Reducing the Saturated Defect Density- in a-Sl:H by Post-Growth Anneals. MRS Proceedings 219.
Crossref
S. Q. Gu, S. Nitta & P. C. Taylor. (2011) Surface Absorption Below the Band Gap in a-Si:H Using Photoluminescence Absorption Spectroscopy. MRS Proceedings 219.
Crossref
Y.-M. Li & W. Paul. (2011) Comments on the Determination of Defect Density in a-Si:H Alloys by Integrating the Sub-Bandgap Optical Absorption Coefficient. MRS Proceedings 219.
Crossref
S. Nitta, H. Miyazima, M. Mukai, S. Nonomura, S.Q. Gu & P.C. Taylor. (1991) Interface properties of a-Si:H/Si3N4+x and a-Si:H/SiO2 elucidated by plas and its improvement by the atomic hydrogen. Journal of Non-Crystalline Solids 137-138, pages 1071-1074.
Crossref
S. Yamasaki, H. Okushi, A. Matsuda, K. Tanaka & J. Isoya. (1990) Origin of optically induced electron-spin resonance in hydrogenated amorphous silicon. Physical Review Letters 65:6, pages 756-759.
Crossref
G. Amato, G. Benedetto, F. Fizzotti, C. Manfredotti & R. Spagnolo. (1990) Photothermal and Photoconductive Measurements of Low Pressure Chemically Vapour Deposited Amorphous Silicon. physica status solidi (a) 119:1, pages 169-176.
Crossref
G. Amato, G. Benedetto & R. Spagnolo. (1990) Elimination of interference fringes from thin film photothermal spectra. Materials Letters 9:4, pages 173-176.
Crossref
Roberto Murri, Luigi Schiavulli, Giovanni Bruno, Pio Capezzuto & Gianni Grillo. (1989) Deposition rate, ion bombardment and gap states density in glow discharge a-Si:H,F films. Thin Solid Films 182:1-2, pages 105-114.
Crossref
G. Weiser & H. Mell. (1989) Temperature dependence of the optical absorption edge in a-Si:H. Journal of Non-Crystalline Solids 114, pages 298-300.
Crossref
Atsuko Yamaguchi, Tetsuya Tada, Kazuro Murayama & Toshiyuki Ninomiya. (1989) Photoluminescence peak shift with increasing temperature and excitation intensity in a-Si:H. Solid State Communications 71:4, pages 233-236.
Crossref
Yoshinori Katayama, Makoto Yao, Yoshitami Ajiro, Masanori Inui & Hirohisa Endo. (1989) Photo-Induced Phenomena in Isolated Selenium Chains. Journal of the Physical Society of Japan 58:5, pages 1811-1822.
Crossref
A. Mandelis, R. E. Wagner, K. Ghandi, R. Baltman & Phat Dao. (1989) Photopyroelectric spectroscopy of a -Si:H thin semiconducting films on quartz . Physical Review B 39:8, pages 5254-5260.
Crossref
Hideyo Okushi, Tatsuya Furui, Ratnabali Banerjee & Kazunobu Tanaka. (1989) Light-induced changes of gap-state profile in phosphorus-doped hydrogenated amorphous silicon. Applied Physics Letters 54:5, pages 439-441.
Crossref
Yoshihiro Hamakawa & Hiroaki Okamoto. 1989. Advances in Solar Energy. Advances in Solar Energy 1 98 .
A. Mandelis, R. E. Wagner, K. Ghandi, R. Baltman & Phat Dao. 1989. Review of Progress in Quantitative Nondestructive Evaluation. Review of Progress in Quantitative Nondestructive Evaluation 1255 1262 .
K. N. Madhusoodanan & J. Philip. (1988) Optical energy gap and thermal diffusivity of GeSe semiconducting glasses. Physica Status Solidi (a) 108:2, pages 775-782.
Crossref
Hideharu Matsuura. (1988) A novel method for determining the gap-state profile and its application to amorphous Si1− x Ge x :H films . Journal of Applied Physics 64:4, pages 1964-1973.
Crossref
Keiji Tanaka, Yoshikatsu Ichimura & Kiyotaka Sindoh. (1988) Pyroelectric photothermal spectroscopy for thin solid films. Journal of Applied Physics 63:6, pages 1815-1819.
Crossref
A. H. Mahan, A. Mascarenhas, D. L. Williamson & R. S. Crandall. (2011) Microstructure and the Urbach Edge in Glow Discharge Deposited a-SiC:H. MRS Proceedings 118.
Crossref

Reprints and Corporate Permissions

Please note: Selecting permissions does not provide access to the full text of the article, please see our help page How do I view content?

To request a reprint or corporate permissions for this article, please click on the relevant link below:

Academic Permissions

Please note: Selecting permissions does not provide access to the full text of the article, please see our help page How do I view content?

Obtain permissions instantly via Rightslink by clicking on the button below:

If you are unable to obtain permissions via Rightslink, please complete and submit this Permissions form. For more information, please visit our Permissions help page.