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Science and Technology of Advanced Materials Volume 23, 2022 - Issue 1
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Optical, magnetic and electronic device materials

High reactivity of H2O vapor on GaN surfaces

Masatomo Sumiyaa Next Generation Semiconductor Group, National Institute for Materials Science, Tsukuba, JapanCorrespondence[email protected]
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Masato Sumitab Center for Advanced Intelligence Project (AIP), RIKEN, Tokyo, JapanView further author information
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Yasutaka Tsudac Materials Sciences Research Center, Japan Atomic Energy Agency, Hyogo, JapanView further author information
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Tetsuya Sakamotoc Materials Sciences Research Center, Japan Atomic Energy Agency, Hyogo, JapanView further author information
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Liwen Sangd International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science, Ibaraki, JapanView further author information
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Yoshitomo Haradae Research and Services Division of Materials Data and Integrated System, National Institute for Materials Science, Ibaraki, JapanView further author information
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Akitaka Yoshigoec Materials Sciences Research Center, Japan Atomic Energy Agency, Hyogo, JapanView further author information
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Pages 189-198 | Received 13 Oct 2021, Accepted 06 Mar 2022, Published online: 08 Apr 2022

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