High reactivity of H₂O vapor on GaN surfaces

References

• Oka T, Ina T, Ueno Y, et al. 1.8 mΩcm2 vertical GaN-based trench metal–oxide–semiconductor field-effect transistors on a free-standing GaN substrate for 1.2-kV-class operation. Appl Phys Express. 2015;8:054101.
   Web of Science ®Google Scholar
• Taoka N, Kubo T, Yamada T, et al. Impacts of oxidants in atomic layer deposition method on Al2O3/GaN interface properties. Jpn J Appl Phys. 2018;57:01AD04.
   Web of Science ®Google Scholar
• Hori Y, Mizue C, Hashizume T. Interface state characterization of ALD-Al2O3/ GaN and ALD-Al2O3/AlGaN/GaN structures. Phys Status Solidi C. 2012;9:1356.
   Google Scholar
• Sumiya M, Yoshimura K, Ohtsuka K, et al. Dependence of impurity incorporation on the polar direction of GaN film growth. Appl Phys Lett. 2000;76:2098.
   Web of Science ®Google Scholar
• Sumiya M, Sumita M, Asai Y, et al. Dynamic observation and theoretical analysis of initial O2 molecule adsorption on polar and m-plane surfaces of GaN. J Phys Chem C. 2020;124:25282.
   Web of Science ®Google Scholar
• Teraoka Y, Yoshigoe A. Commissioning of surface chemistry end-station in BL23SU of SPring-8. Appl Surf Sci. 2001;169-170:738.
   Web of Science ®Google Scholar
• Teraoka Y, Yoshigoe A. Precise Control of Si(001) Initial Oxidation by Translational Kinetic Energy of O2 Molecules. Jpn J Appl Phys. 2002;41:4253.
   Web of Science ®Google Scholar
• Yoshigoe A, Teraoka Y. Adsorption dynamics on Si(111)-7 × 7 surface induced by supersonic O2 beam studied using real-time photoelectron spectroscopy. J Phys Chem C. 2010;114:22539.
   Google Scholar
• The CP2K developers group. http://www.cp2k.org/
   Google Scholar
• Perdew JP, Burke K, Ernerhof M. Generalized gradient approximation made simple. Phys Rev Lett. 1996;77:3865.
   PubMed Web of Science ®Google Scholar
• Lippert G, Hutter J, Parrinello M. A hybrid Gaussian and plane wave density functional scheme. Mol Phys. 1997;92:477.
   Web of Science ®Google Scholar
• Goedecker S, Teter M, Hutter J. Separable dual-space Gaussian pseudopotentials. Phys Rev B. 1996;54:1703.
   PubMed Web of Science ®Google Scholar
• Bussi G, Donadio D, Parrinello M. Canonical sampling through velocity rescaling. J Chem Phys. 2007;126:014101.
   PubMed Web of Science ®Google Scholar
• Hashimoto T, Koinuma H, Kishio K. Thermodynamic estimation of oxidation ability of various gases used for the preparation of superconducting films at high vacuum. Jpn J Appl Phys. 1991;30:1685.
   Web of Science ®Google Scholar
• Fujimoto E, Watanabe K, Matsumoto Y, et al. Reduction of non-radiative recombination center for ZnO films grown under Zn-rich conditions by metalorganic chemical vapor deposition. Appl Phys Lett. 2010;97:131913.
   Web of Science ®Google Scholar
• Imazeki Y, Sato M, Takeda T, et al. Band bending of n‑GaN under ambient H2O vapor studied by X‑ray photoelectron spectroscopy. J Phys Chem C. 2021;125:9011–9019. DOI:10.1021/acs.jpcc.0c11174.
   Web of Science ®Google Scholar
• Li D, Sumiya M, Fuke S, et al. Selective etching of GaN polar surface in potassium hydroxide solution studied by x-ray photoelectron spectroscopy. J Appl Phys. 2001;90:4219.
   Web of Science ®Google Scholar
• Lorenz P, Gutt R, Haensel T, et al. Interaction of GaN (0001)-2x2 surfaces with H2O. Phys Status Solid C. 2010;7:169.
   Google Scholar
• Imazeki Y, Sato M, Takeda T, et al. Band bending of n-GaN under Ambient H2O vapor studied by x-ray photoelectron spectroscopy. J Phys Chem C. 2021;125:9011. DOI:10.1021/acs.jpcc.0c11174.
   Web of Science ®Google Scholar
• Yamada T, Ito J, Asahara R, et al. Improved interface properties of GaN-based metal-oxide-semiconductor devices with thin Ga-oxide interlayers. Appl Phys Lett. 2017;110:261603.
   Web of Science ®Google Scholar
• Eller BS, Yang J, Nemanich RJ. Electronic surface and dielectric interface states on GaN and AlGaN. J Vac Sci Technol A. 2013;31:050807.
   Web of Science ®Google Scholar
• Yamada A, Watanabe K, Nozaki M, et al. Control of Ga-oxide interlayer growth and Ga diffusion in SiO2/GaN stacks for high-quality GaN-based metal–oxide–semiconductor devices with improved gate dielectric reliability. Appl Phys Express. 2018;11:015701.
   Web of Science ®Google Scholar
• Fujimoto E, Sumiya M, Ohnishi T, et al. Hetero-Epitaxial growth of ZnO Film by temperature-modulated metalorganic chemical vapor deposition. Appl Phys Express. 2009;2:045502.
   Web of Science ®Google Scholar