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Philosophical Magazine Volume 95, 2015 - Issue 10
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Part A: Materials Science

On double exponential forward bias current-voltage (I–V) characteristics of Au/Ca3Co4Ga0.001Ox/n-Si/Au (MIS) type structures in temperature range of 80–340 K

E. MarılFaculty of Sciences, Department of Physics, Gazi University, Ankara, TurkeyCorrespondence[email protected]
,
Ş. AltındalFaculty of Sciences, Department of Physics, Gazi University, Ankara, Turkey
,
A. KayaDepartment of Opticianry, Vocational School of Medical Sciences, Turgut Özal University, Ankara, Turkey
,
S. KoçyiğitChemistry Education Department, Faculty of Education, Gazi University, Ankara, Turkey
&
İ. UsluChemistry Education Department, Faculty of Education, Gazi University, Ankara, Turkey
Pages 1049-1068 | Received 01 Aug 2014, Accepted 06 Jan 2015, Published online: 13 Mar 2015

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İbrahim Hüdai Taşdemir, Özkan Vural & İlbilge Dökme. (2016) Electrical characteristics of p-Si/TiO2/Al and p-Si/TiO2-Zr/Al Schottky devices. Philosophical Magazine 96:16, pages 1684-1693.
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Ayşe Gül Eroğlu, Mert Yıldırım, Perihan Durmuş & İlbilge Dökme. (2019) Distribution of interface traps in Au/2% GC‐doped Ca 3 Co 4 Ga 0.001 O x / n ‐Si structures . Journal of Applied Polymer Science 137:8, pages 48399.
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Ze Long, Xiao-Chuan Xia, Jian-Jun Shi, Jun Liu, Xin-Lei Geng, He-Zhi Zhang & Hong-Wei Liang. (2020) Temperature dependent characteristics of Ni/Au vertical Schottky diode based on mechanically exfoliated beta-Ga<sub>2</sub>O<sub>3</sub> single crystal. Acta Physica Sinica 69:13, pages 138501.
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ELİF MARIL. (2019) The Investigation of Temperature Dependent Reverse Bias Capacitance-Voltage (C-V) Characteristics of Au/Ppy/N-Si (MPS) Type Schottky Barrier Diodes (Sbds) at 100 Khz and 500 KhzThe Investigation of Temperature Dependent Reverse Bias Capacitance-Voltage (C-V) Characteristics of Au/Ppy/N-Si (MPS) Type Schottky Barrier Diodes (Sbds) at 100 Khz and 500 Khz. Iğdır Üniversitesi Fen Bilimleri Enstitüsü Dergisi 9:4, pages 2062-2069.
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Arvind Kumar, Ashwani Kumar, K.K. Sharma & Subhash Chand. (2019) Analysis of anomalous transport mechanism across the interface of Ag/p-Si Schottky diode in wide temperature range. Superlattices and Microstructures 128, pages 373-381.
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S. Boughdachi, Y. Badali, Y. Azizian-Kalandaragh & Ş. Altındal. (2018) Current-Transport Mechanisms of the Al/(Bi2S3-PVA Nanocomposite)/p-Si Schottky Diodes in the Temperature Range Between 220 K and 380 K. Journal of Electronic Materials 47:12, pages 6945-6953.
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Elif Maril, Serhat Orkun Tan, Semsettin Altindal & Ibrahim Uslu. (2018) Evaluation of Electric and Dielectric Properties of Metal–Semiconductor Structures With 2% GC-Doped-(Ca 3 Co 4 Ga 0.001 O x ) Interlayer . IEEE Transactions on Electron Devices 65:9, pages 3901-3908.
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S. Demirezen, A. Kaya, Ş. Altındal & İ. Uslu. (2017) The energy density distribution profile of interface traps and their relaxation times and capture cross sections of Au/GO-doped PrBaCoO nanoceramic/n-Si capacitors at room temperature. Polymer Bulletin 74:9, pages 3765-3781.
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