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İbrahim Hüdai Taşdemir, Özkan Vural & İlbilge Dökme. (2016) Electrical characteristics of p-Si/TiO2/Al and p-Si/TiO2-Zr/Al Schottky devices. Philosophical Magazine 96:16, pages 1684-1693.
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R. Marnadu, S. Karthik Kannan, M. Vidhya, G. Sujithkumar, K. Mohanraj, S. Maruthamuthu, Abdullah M. Al-Enizi, Mohd Ubaidullah & Sreedevi Gedi. (2022) Influence of Ag+ ions on the physical properties of spray coated CeO2 thin films and photo-response of p-Si/n-SDC junction diodes. Surfaces and Interfaces 30, pages 101866.
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P. Harishsenthil, J. Chandrasekaran, R. Marnadu & V. Balasubramani. (2021) Incorporation of Zn ions on high dielectric HfO2 thin films by spray pyrolysis and fabrication of Al/Zn@HfO2/n-Si Schottky barrier diodes. Sensors and Actuators A: Physical 331, pages 112725.
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P. Harishsenthil, J. Chandrasekaran, R. Marnadu & Mohd Shkir. (2021) Enhancing of Al/Sn-HfO2/n-Si (MIS) Schottky barrier diode performance through the incorporation of Sn ions on high dielectric HfO2 thin films formed by spray pyrolysis. Journal of Inorganic and Organometallic Polymers and Materials 31:9, pages 3686-3699.
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Ayşe Gül Eroğlu, Mert Yıldırım, Perihan Durmuş & İlbilge Dökme. (2019)
Distribution of interface traps in Au/2% GC‐doped Ca
3
Co
4
Ga
0.001
O
x
/
n
‐Si structures
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ELİF MARIL. (2019) The Investigation of Temperature Dependent Reverse Bias Capacitance-Voltage (C-V) Characteristics of Au/Ppy/N-Si (MPS) Type Schottky Barrier Diodes (Sbds) at 100 Khz and 500 KhzThe Investigation of Temperature Dependent Reverse Bias Capacitance-Voltage (C-V) Characteristics of Au/Ppy/N-Si (MPS) Type Schottky Barrier Diodes (Sbds) at 100 Khz and 500 Khz. Iğdır Üniversitesi Fen Bilimleri Enstitüsü Dergisi 9:4, pages 2062-2069.
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Selçuk Demirezen. (2019) The role of interface traps, series resistance and (Ni-doped PVA) interlayer effects on electrical characteristics in Al/p-Si (MS) structures. Journal of Materials Science: Materials in Electronics 30:22, pages 19854-19861.
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Seçkin ALTINDAL YERİŞKİN. (2019) Effects of (0.01Ni-PVA) interlayer, interface traps (Dit), and series resistance (Rs) on the conduction mechanisms(CMs) in the Au/n-Si (MS) structures at room temperature. Iğdır Üniversitesi Fen Bilimleri Enstitüsü Dergisi 9:2, pages 835-846.
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Haziret Durmuş, Mert Yıldırım & Şemsettin Altındal. (2019) On the possible conduction mechanisms in Rhenium/n-GaAs Schottky barrier diodes fabricated by pulsed laser deposition in temperature range of 60–400 K. Journal of Materials Science: Materials in Electronics 30:9, pages 9029-9037.
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Arvind Kumar, Ashwani Kumar, K.K. Sharma & Subhash Chand. (2019) Analysis of anomalous transport mechanism across the interface of Ag/p-Si Schottky diode in wide temperature range. Superlattices and Microstructures 128, pages 373-381.
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M. Hussein Al-Dharob, H. Elif Lapa, A. Kökce, A. Faruk Özdemir, D. Ali Aldemir & Ş. Altındal. (2018) The investigation of current-conduction mechanisms (CCMs) in Au/ (0.07Zn-PVA)/n-4H-SiC (MPS) Schottky diodes (SDs) by using (I-V-T) measurements. Materials Science in Semiconductor Processing 85, pages 98-105.
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Ö. Sevgili, S. Yılmaz, Ş. Altındal, E. Bacaksız & Ç. Bilkan. (2017) The Investigation of Current-Conduction Mechanisms of Te/NaF:CdS/SnO2 Structure in Wide Temperature Range of 80–400 K. Proceedings of the National Academy of Sciences, India Section A: Physical Sciences 87:3, pages 409-417.
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OSMAN KAHVECI, ABDULLAH AKKAYA, ENISE AYYILDIZ & ABDÜLMECIT TÜRÜT. (2016) COMPARISON OF THE Ti/n-GaAs SCHOTTKY CONTACTS’ PARAMETERS FABRICATED USING DC MAGNETRON SPUTTERING AND THERMAL EVAPORATION. Surface Review and Letters 24:04, pages 1750047.
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Abdulkerim Karabulut, Hasan Efeoglu & Abdulmecit Turut. (2017)
Influence of Al
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O
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barrier on the interfacial electronic structure of Au/Ti/n-GaAs structures
. Journal of Semiconductors 38:5, pages 054003.
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Varun Singh Nirwal & Koteswara Rao Peta. (2016) Behavior of temperature dependent electrical properties of Pd/Au Schottky contact to GaN grown on Si substrate by MBE. Materials Research Express 3:12, pages 125901.
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A. Kaya, H. G. Çetinkaya, Ş. Altındal & İ. Uslu. (2016) A comparative study on the electrical parameters of Au/n-Si Schottky diodes with and without interfacial (Ca1.9Pr0.1Co4Ox) layer. International Journal of Modern Physics B 30:16, pages 1650090.
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A. Turut, K. Ejderha, N. Yildirim & B. Abay. (2016) Characteristic diode parameters in thermally annealed Ni/p-InP contacts. Journal of Semiconductors 37:4, pages 044001.
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