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Philosophical Magazine Volume 96, 2016 - Issue 16
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Part A: Materials Science

Electrical characteristics of p-Si/TiO2/Al and p-Si/TiO2-Zr/Al Schottky devices

İbrahim Hüdai TaşdemirFaculty of Arts and Science, Department of Chemistry, Amasya University, Amasya, Turkey
,
Özkan VuralFaculty of Arts and Science, Department of Physics, Amasya University, Amasya, TurkeyCorrespondence[email protected]
&
İlbilge DökmeFaculty of Gazi Education, Department of Science Education, Gazi University, Ankara, Turkey
Pages 1684-1693 | Received 18 Dec 2015, Accepted 08 Apr 2016, Published online: 02 May 2016

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Haziret Durmuş & Şükrü Karataş. (2019) The analysis of the electrical characteristics and interface state densities of Re/n-type Si Schottky barrier diodes at room temperature. International Journal of Electronics 106:4, pages 507-520.
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Articles from other publishers (15)

Ahmed M. El-Mahalawy, Mahmoud M. Abdrabou, Ahmed R. Wassel, Mohamed Abd El-Salam & Fatma M. Amin. (2022) Plasmonic enhanced ultraviolet photodetection performance of n-TiO2/p-Si anisotype heterojunction with aluminum patterned array. Journal of Physics and Chemistry of Solids 170, pages 110943.
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Fatih Ünal. (2022) Investigation of Diode Parameters of Photoconductive and Photovoltaic p-Type Si/Ge-Doped WOx Heterojunction. Journal of Electronic Materials 51:11, pages 6397-6409.
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Ahlem Rouis, Neila Hizem, Mohamed Hassen & Adel Kalboussi. (2021) Electrical Properties of Silicon Nanowires Schottky Barriers Prepared by MACE at Different Etching Time. Silicon 14:9, pages 4731-4737.
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Aloke Kumar Das, R. Mandal & D.K. Mandal. (2022) The current transport mechanism of Al/Beetroot/Cu used as an organic semiconductor Schottky diode is superior than natural dye-based thin film devices. Microelectronic Engineering 261, pages 111816.
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M. Koca, M. Yilmaz, D. Ekinci & Ş. Aydoğan. (2021) Light Sensitive Properties and Temperature-Dependent Electrical Performance of n-TiO2/p-Si Anisotype Heterojunction Electrochemically Formed TiO2 on p-Si. Journal of Electronic Materials 50:9, pages 5184-5195.
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M. Sağlam, B. Güzeldir, A. Türüt & D. Ekinci. (2021) Role of Reduced Graphene Oxide-Gold Nanoparticle Composites on Au/Au-RGO/p-Si/Al Structure Depending on Sample Temperature. Journal of Electronic Materials 50:8, pages 4752-4761.
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Zakir Çaldıran. (2021) Modification of Schottky barrier height using an inorganic compound interface layer for various contact metals in the metal/p-Si device structure. Journal of Alloys and Compounds 865, pages 158856.
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Hüseyin Kaan Kaplan, Ali Olkun, Sertan Kemal Akay & Suat Pat. (2021) Si-based photodiode and material characterization of TiO2 thin film. Optical and Quantum Electronics 53:5.
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M. Koca, Z. Kudaş, D. Ekinci & Ş. Aydoğan. (2021) Performance improvement of n-TiO2/p-Si heterojunction by forming of n-TiO2/polyphenylene/p-Si anisotype sandwich heterojunction. Materials Science in Semiconductor Processing 121, pages 105436.
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E. Şenarslan, B. Güzeldir & M. Sağlam. (2020) Effects of surface passivation on capacitance-voltage and conductance-voltage characteristics of Al/p-type Si/Al and Al/V2O5/p-type Si/Al diodes. Journal of Physics and Chemistry of Solids 146, pages 109564.
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Abderhamane Boutelala, Fouzia Bourfa & Mohamed Mahtali. (2020) Effect of light on electrical and photoelectrical characteristics of Al/TiO2/p-Si Schottky diode. Journal of Materials Science: Materials in Electronics 31:14, pages 11379-11389.
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M.O. Erdal, A. Kocyigit & M. Yıldırım. (2020) The rate of Cu doped TiO2 interlayer effects on the electrical characteristics of Al/Cu:TiO2/n-Si (MOS) capacitors depend on frequency and voltage. Microelectronics Reliability 106, pages 113591.
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Asmaa Djeghlouf, Djillali Hamri, Abdelkader Teffahi, Abdelkader Saidane, Faisal S. Al Mashary, Maryam M. Al Huwayz, Mohamed Henini, Ikram Orak, Abdulrahman M. Albadri & Ahmed Y. Alyamani. (2019) Effect of indium doping on the electrical and structural properties of TiO2 thin films used in MOS devices. Journal of Alloys and Compounds 775, pages 202-213.
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Rifat Capan & Asim K. Ray. (2017) Dielectric Measurements on Sol–Gel Derived Titania Films. Journal of Electronic Materials 46:11, pages 6646-6652.
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ALOKE KUMAR DAS, R. Mandal & D. K. Mandal. (2022) Quantum Tunneling with Trap-Assisted Current Transport Mechanism and Insulating Temperature of Al/Beetroot/Cu Used as Organic Semiconductor Schottky Diode. SSRN Electronic Journal.
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