Controlling the defect density to improve the output power of InGaN/GaN-based vertical light-emitting diodes by using substrates patterned with SiO₂ lenses

Daesung KangLED Division, LG Innotek Co. Ltd, Paju-city, Korea;Department of Nanophotonics, Korea University, Seoul, Korea

Da-Som KimDepartment of Applied Physics, Kyung Hee University, Yongin-si, Korea

Sun-Kyung KimDepartment of Applied Physics, Kyung Hee University, Yongin-si, Korea

Kiyoung SongLED Division, LG Innotek Co. Ltd, Paju-city, Korea

Myunghoon JungLED Division, LG Innotek Co. Ltd, Paju-city, Korea

Hwanhee JeongLED Division, LG Innotek Co. Ltd, Paju-city, Korea

June-O SongLED Division, LG Innotek Co. Ltd, Paju-city, Korea

Tae-Yeon SeongDepartment of Nanophotonics, Korea University, Seoul, Korea;Department of Materials Science and Engineering, Korea University, Seoul, KoreaCorrespondence[email protected]

show all

Citations (2)

Keep up to date with the latest research on this topic with citation updates for this article.

Read on this site (1)

Luqiao Yin, Piaopiao He, Tingting Nan & Jianhua Zhang. (2017) The degradation mechanism of GaN HP-LED under accelerated aging was analyzed by illuminance and temperature distribution. Molecular Crystals and Liquid Crystals 651:1, pages 149-154.
Read now

Articles from other publishers (1)

Sang-Youl Lee, Kiman Kang, Eunduk Lee, Yoomin Jo, Doyub Kim, Jeong-Tak Oh, Hwan-Hee Jeong, Tae-Yeon Seong & Hiroshi Amano. (2020) Improved Leakage and Output Characteristics of Pixelated LED Array for Headlight application. ECS Journal of Solid State Science and Technology 9:4, pages 045011.
Crossref

Reprints and Corporate Permissions

Please note: Selecting permissions does not provide access to the full text of the article, please see our help page How do I view content?

To request a reprint or corporate permissions for this article, please click on the relevant link below:

Order Reprints Request Corporate Permissions

Academic Permissions

Please note: Selecting permissions does not provide access to the full text of the article, please see our help page How do I view content?

Obtain permissions instantly via Rightslink by clicking on the button below:

Request Academic Permissions

If you are unable to obtain permissions via Rightslink, please complete and submit this Permissions form. For more information, please visit our Permissions help page.

Controlling the defect density to improve the output power of InGaN/GaN-based vertical light-emitting diodes by using substrates patterned with SiO₂ lenses

Articles from other publishers (1)

Information for

Open access

Opportunities

Help and information

Your download is now in progress and you may close this window

Login or register to access this feature

Controlling the defect density to improve the output power of InGaN/GaN-based vertical light-emitting diodes by using substrates patterned with SiO2 lenses

Citations (2)

Read on this site (1)

Articles from other publishers (1)

Reprints and Corporate Permissions

Academic Permissions

Related research

To cite this article:

Download citation

Information for

Open access

Opportunities

Help and information

Keep up to date

Controlling the defect density to improve the output power of InGaN/GaN-based vertical light-emitting diodes by using substrates patterned with SiO₂ lenses