Controlling the defect density to improve the output power of InGaN/GaN-based vertical light-emitting diodes by using substrates patterned with SiO₂ lenses

References

• B.S. Tan, S. Yuan, and X.J. Kang, Performance enhancement of InGaN light- emitting diodes by laser lift-off and transfer from sapphire to copper substrate, Appl. Phys. Lett. 84 (2004), pp. 2757–2759.10.1063/1.1704862
   Web of Science ®Google Scholar
• J.-T. Chu, H.-W. Huang, C.-C. Kao, W.-D. Liang, F.-I. Lai, C.-F. Chu, H.-C. Kuo, and S.-C. Wang, Fabrication of large-area GaN-based light-emitting diodes on Cu substrate, Jpn. J. Appl. Phys. 44 (2005), pp. 2509–2511.10.1143/JJAP.44.2509
   Web of Science ®Google Scholar
• W.Y. Lin, D.S. Wuu, K.F. Pan, S.H. Huang, C.E. Lee, W.K. Wang, S.C. Hsu, Y.Y. Su, S.Y. Huang, and R.H. Horng, High-power GaN-mirror-Cu light-emitting diodes for vertical current injection using laser liftoff and electroplating techniques, IEEE Photonics Technol. Lett. 17 (2005), pp. 1809–1811.10.1109/LPT.2005.852321
   Web of Science ®Google Scholar
• T.-M. Chang, H.-K. Fang, C. Liao, W.-Y. Hsu, and Y.S. Wu, Laser lift-off mechanisms of GaN epi-Layer grown on pattern sapphire substrate, ECS J. Solid State Sci. Technol. 4 (2015), pp. R20–R22.
   Web of Science ®Google Scholar
• K.-M. Uang, S.-J. Wang, S.-L. Chen, Y.-C. Yang, T.-M. Chen, and B.-W. Liou, Effect of surface treatment on the performance of vertical-structure GaN-based high-power light-emitting diodes with electroplated metallic substrates, Jpn. J. Appl. Phys. 45 (2006), pp. 3436–3441.10.1143/JJAP.45.3436
   Web of Science ®Google Scholar
• S.-Y. Lee, K.-K. Choi, H.-H. Jeong, H.-S. Choi, T.-H. Oh, J.-O. Song, and T.-Y. Seong, Wafer-level fabrication of GaN-based vertical light-emitting diodes using a multi-functional bonding material system, Semicond. Sci. Technol. 24 (2009), pp. 092001–92004.10.1088/0268-1242/24/9/092001
   Google Scholar
• V. Haerle, B. Hahn, S. Kaiser, A. Weimar, S. Bader, F. Eberhard, A. Plossl, and D. Eisert, High brightness LEDs for general lighting applications Using the new ThinGaN™-Technology, Phys. Status Solidi (a) 201 (2004), pp. 2736–2739.
   Web of Science ®Google Scholar
• H. Kim, K.-K. Choi, K.-K. Kim, J. Cho, S.-N. Lee, Y. Park, J. S. Kwak, T.-Y. Seong, and T.-Y. Seong, Light-extraction enhancement of vertical-injection GaN-based light-emitting diodes fabricated with highly integrated surface textures, Opt. Lett. 33 (2008), pp. 1273–1275.10.1364/OL.33.001273
   PubMed Web of Science ®Google Scholar
• D.-S. Wuu, S.-C. Hsu, S.-H. Huang, C.-C. Wu, C.-E. Lee, and R.-H. Horng, GaN/Mirror/Si light-emitting diodes for vertical current injection by laser lift-off and wafer bonding techniques, Jpn. J. Appl. Phys. 43 (2004), pp. 5239–5242.10.1143/JJAP.43.5239
   Web of Science ®Google Scholar
• J.S. Ha, S.W. Lee, H.J. Lee, H.-J. Lee, S.H. Lee, H. Goto, T. Kato, K. Fujii, M.W. Cho, and T. Yao, The fabrication of vertical light-emitting diodes using chemical lift-off process, IEEE Photonics Technol. Lett. 20 (2008), pp. 175–177.10.1109/LPT.2007.912491
   Web of Science ®Google Scholar
• K. Tadatomo, H. Okagawa, Y. Ohuchi, T. Tsunekawa, Y. Imada, M. Kato, and T. Taguchi, High output power InGaN ultraviolet light-emitting diodes fabricated on patterned substrates using metalorganic vapor phase epitaxy, Jpn. J. Appl. Phys. 40 (2001), pp. L583–L585.10.1143/JJAP.40.L583
   Google Scholar
• D.-W. Lin, J.-K. Huang, C.-Y. Lee, R.-W. Chang, Y.-P. Lan, C.-C. Lin, K.-Y. Lee, C.-H. Lin, P.-T. Lee, G.-C. Chi, and H.-C. Kuo, Enhanced light output power and growth mechanism of GaN-based light-emitting diodes grown on cone-shaped SiO2 patterned template, J. Disp. Technol. 9 (2013), pp. 285–291.10.1109/JDT.2012.2230395
   Web of Science ®Google Scholar
• J.-H. Lee, J.-T. Oh, S.-B. Choi, Y.-C. Kim, H.-I. Cho, and J.-H. Lee, Enhancement of InGaN-based vertical LED with concavely patterned surface using patterned sapphire substrate, IEEE Photonics Technol. Lett. 20 (2008), pp. 345–347.10.1109/LPT.2007.915648
   Web of Science ®Google Scholar
• X.J. Su, K. Xu, G.Q. Ren, J.F. Wang, Y. Xu, X.H. Zeng, J.C. Zhang, D.M. Cai, T.F. Zhou, Z.H. Liu, and H. Yang, Electrical and optical inhomogeneity in N-face GaN grown by hydride vapor phase epitaxy, J. Cryst. Growth 372 (2013), pp. 43–48.10.1016/j.jcrysgro.2013.03.018
   Web of Science ®Google Scholar
• T. Hino, S. Tomiya, T. Miyajima, K. Yanashima, S. Hashimoto, and M. Ikeda, Characterization of threading dislocations in GaN epitaxial layers, Appl. Phys. Lett. 76 (2000), pp. 3421–3423.10.1063/1.126666
   Web of Science ®Google Scholar
• E. A. Stach, C. F. Kisielowski, W. S. Wong, T. Sands, and N. W. Cheung, Real time observation and characterization of dislocation motion, nitrogen desorption and nanopipe formation in GaN, Mat. Res. Soc. Symp. 622 (2000), pp. T5.8.1–6.
   Google Scholar
• T.S. Oh, H. Jeong, Y.S. Lee, T.H. Seo, A.H. Park, H. Kim, K.J. Lee, M.S. Jeong, and E.-K. Suh, Defect structure originating from threading dislocations within the GaN film grown on a convex patterned sapphire substrate, Thin Solid Films 519 (2011), pp. 2398–2401.10.1016/j.tsf.2010.11.043
   Web of Science ®Google Scholar
• H. Takahashi, A. Ito, T. Tanaka, A. Watanabe, H. Ota, and K. Chikuma, Effect of intentionally formed ‘v-defects’ on the emission efficiency of gainn single quantum well, Jpn. J. Appl. Phys. 39 (2000), pp. L569–L571.10.1143/JJAP.39.L569
   Google Scholar
• N. Sharma, P. Thomas, D. Tricker, and C. Humphreys, Chemical mapping and formation of V-defects in InGaN multiple quantum wells, Appl. Phys. Lett. 77 (2000), pp. 11274–11276.
   Google Scholar
• C. Bazioti, E. Papadomanolaki, Th. Kehagias, T. Walther, J. Smalc-Koziorowska, E. Pavlidou, P. Komninou, T. Karakostas, E. Iliopoulos, and G.P. Dimitrakopulos, Defects, strain relaxation, and compositional grading in high indium content InGaN epilayers grown by molecular beam epitaxy, J. Appl. Phys. 118 (2015), pp. 155301–155311.10.1063/1.4933276
   Web of Science ®Google Scholar
• S. Suihkonen, T. Lang, O. Svensk, J. Sormunen, P.T. Törmä, M. Sopanen, H. Lipsanen, M.A. Odnoblyudov, and V.E. Bougrov, Control of the morphology of InGaN/GaN quantum wells grown by metalorganic chemical vapor deposition, J. Crystal Growth 300 (2007), pp. 324–329.10.1016/j.jcrysgro.2007.01.006
   Web of Science ®Google Scholar
• V.S. Kopp, V.M. Kaganer, M.V. Baidakova, W.V. Lundin, A.E. Nikolaev, E.V. Verkhovtceva, M.A. Yagovkina, and N. Cherkashin, X-ray determination of threading dislocation densities in GaN/Al2O3(0001) films grown by metalorganic vapor phase epitaxy, J. Appl. Phys. 115 (2014), pp. 073507–73509.10.1063/1.4865502
   Google Scholar
• M.S. Minsky, M. White, and E.L. Hu, Room-temperature photoenhanced wet etching of GaN, Appl. Phys. Lett. 68 (1996), pp. 1531–1533.10.1063/1.115689
   Web of Science ®Google Scholar
• T. Fujii, Y. Gao, R. Sharma, E.L. Hu, S.P. DenBaars, and S. Nakamura, Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening, Appl. Phys. Lett. 84 (2004), pp. 855–858.10.1063/1.1645992
   Web of Science ®Google Scholar
• T. Wei, X. Ji, K. Wu, H. Zheng, C. Du, Y. Chen, Q. Yan, L. Zhao, Z. Zhou, J. Wang, and J. Li, Efficiency improvement and droop behavior in nanospherical-lens lithographically patterned bottom and top photonic crystal InGaN/GaN light-emitting diodes, Opt. Lett. 39 (2014), pp. 379–382.10.1364/OL.39.000379
   PubMed Web of Science ®Google Scholar
• Y.-J. Moon, D.-Y. Moon, J. Jang, J.-Y. Na, J.-H. Song, M.-K. Seo, S. Kim, D. Bae, E.H. Park, Y. Park, S.-K. Kim, and E. Yoon, Microstructured air cavities as high-index contrast substrates with strong diffraction for light-emitting diodes, Nano Lett. 16 (2016), pp. 3301–3308.10.1021/acs.nanolett.6b00892
   PubMed Web of Science ®Google Scholar
• H.-Y. Ryu, K.-S. Jeon, M.-G. Kang, Y. Choi, and J.-S. Lee, Dependence of efficiencies in GaN-based vertical blue light-emitting diodes on the thickness and doping concentration of the n-GaN layer, Opt. Express 21 (2013), pp. A190–A200.10.1364/OE.21.00A190
   Google Scholar
• S.-K. Kim and H.-G. Park, Coherent vertical beaming using Bragg mirrors for high-efficiency GaN light-emitting diodes, Opt. Express 21 (2013), pp. 14566–14572.10.1364/OE.21.014566
   PubMed Web of Science ®Google Scholar