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The Philosophical Magazine: A Journal of Theoretical Experimental and Applied Physics
Series 8
Volume 34, 1976 - Issue 4
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Correspondence

Substitutional doping in amorphous semiconductors the As-Si system

J. C. Knights Xerox Palo Alto Research Center, Palo Alto, California, U.S.A.
Pages 663-667 | Received 03 Jun 1976, Published online: 20 Aug 2006

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Masahiko Kojima, Hisao Kato & Mitsuru Gatto. (1996) Optical and electrical properties of amorphous Sb‐Sn‐O thin films. Philosophical Magazine B 73:2, pages 277-288.
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D.E. Carlson. (1990) The doping of hydrogenated amorphous silicon and its impact on devices. Critical Reviews in Solid State and Materials Sciences 16:6, pages 417-435.
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M. Tanielian. (1982) Adsorbate effects on the electrical conductance of a-Si: H. Philosophical Magazine B 45:4, pages 435-462.
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D.A. Anderson & W. Paul. (1982) Transport properties of a-Si: H alloys prepared by r.f. sputtering. Philosophical Magazine B 45:1, pages 1-23.
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J.C. Anderson, Ki-Wan Kim & E. Seferiades. (1981) Preparation of amorphous silicon by sputtering in silane. Philosophical Magazine B 43:1, pages 51-60.
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JohnC. Knights & Gerald Lucovsky. (1980) Hydrogen in amorphous semiconductors. Critical Reviews in Solid State and Materials Sciences 9:3, pages 211-283.
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G. Müller & S. Kalbitzer. (1978) Doping of amorphous silicon in the hopping transport regime. Philosophical Magazine B 38:3, pages 241-254.
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J.C. Knights, G. Lucovsky & R.J. Nemanich. (1978) Hydrogen bonding in silicon-hydrogen alloys. Philosophical Magazine B 37:4, pages 467-475.
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Articles from other publishers (70)

Debashree Banerjee, Örjan Vallin, Kabir Majid Samani, Subimal Majee, Shi-Li Zhang, Johan Liu & Zhi-Bin Zhang. (2018) Elevated thermoelectric figure of merit of n-type amorphous silicon by efficient electrical doping process. Nano Energy 44, pages 89-94.
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Arun Madan. (2006) Amorphous silicon – From doping to multi-billion dollar applications. Journal of Non-Crystalline Solids 352:9-20, pages 881-886.
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Fanying Meng, Tietun Sun & Rongqiang Cui. (2000) Recombination properties of grain boundaries in polycrystalline silicon under illumination. Semiconductor Science and Technology 15:9, pages 926-930.
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Kin Man Yu, W. Walukiewicz, S. Muto, H.-C. Jin, J. R. Abelson, C. Clerc, C. J. Glover & M. C. Ridgway. (1999) Local structures of Ga atoms in amorphous silicon and hydrogenated amorphous silicon before and after synchrotron x-ray irradiation. Applied Physics Letters 75:21, pages 3282-3284.
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J. I. Pankove. 1999. Inorganic Reactions and Methods. Inorganic Reactions and Methods 241 243 .
Katsuhiro Yokota, Masanori Sakaguchi, Daidou Uchida, Takafumi Kuroda & Susumu Tamura. (1993) Crystallization of arsenic-doped hydrogenated amorphous silicon deposited on gallium arsenide. Journal of Applied Physics 74:5, pages 3084-3090.
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G.S. CargillIIIIII & M. Matsuura. (1992) EXAFS studies of arsenic in amorphous silicon. Journal of Non-Crystalline Solids 150:1-3, pages 347-350.
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A. R. Zanatta & I. Chambouleyron. (1992) Transport properties of nitrogen-doped hydrogenated amorphous germanium films. Physical Review B 46:4, pages 2119-2125.
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Ashok Kumar Barua & Ratnabali Banerjee. 1992. New Materials. New Materials 96 126 .
S C Agarwal. (1991) Amorphous silicon-based superlattices. Bulletin of Materials Science 14:5, pages 1257-1278.
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G. Bruno, P. Capezzuto & G. Cicala. (1991) rf glow discharge of SiF4-H2 mixtures: Diagnostics and modeling of the a -Si plasma deposition process . Journal of Applied Physics 69:10, pages 7256-7266.
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James Kakalios. 1991. Hydrogen in Semiconductors. Hydrogen in Semiconductors 381 445 .
. 1990. Thin Films by Chemical Vapour Deposition. Thin Films by Chemical Vapour Deposition 525 681 .
M. Stutzmann, R. A. Street, C. C. Tsai, J. B. Boyce & S. E. Ready. (1989) Structural, optical, and spin properties of hydrogenated amorphous silicon-germanium alloys. Journal of Applied Physics 66:2, pages 569-592.
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E. Canova, Y. H. Kao, T. Marshall & Emil Arnold. (1989) Local environment of arsenic impurities in semi-insulating polycrystalline silicon. Physical Review B 39:5, pages 3131-3137.
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P.K. Shufflebotham, H.C. Card & A. Thanailakis. (1987) A review of amorphous silicon alloys. Journal of Non-Crystalline Solids 92:2-3, pages 183-244.
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G Myburg & R Swanepoel. (1987) The influence of preparation parameters on the deposition rate, density and optical properties of thin hydrogenated amorphous silicon films prepared by r.f. glow discharge. Thin Solid Films 149:3, pages 331-340.
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M. Stutzmann, D. K. Biegelsen & R. A. Street. (1987) Detailed investigation of doping in hydrogenated amorphous silicon and germanium. Physical Review B 35:11, pages 5666-5701.
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G. Myburg & R. Swanepoel. (1987) The influence of substrate temperature on the deposition rate and optical properties of a-Si:H thin films prepared by RF-glow discharge. Journal of Non-Crystalline Solids 89:1-2, pages 13-23.
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S. G. Greenbaum, W. E. Carlos & P. C. Taylor. (1984) Local bonding arrangements of boron in doped hydrogenated amorphous silicon. Journal of Applied Physics 56:6, pages 1874-1877.
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J. P. Harbison, A. J. Williams & D. V. Lang. (1984) Effect of silane dilution on intrinsic stress in glow discharge hydrogenated amorphous silicon films. Journal of Applied Physics 55:4, pages 946-951.
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Herbert A. Weakliem. 1984. Hydrogenated Amorphous Silicon - Part A: Preparation and Structure. Hydrogenated Amorphous Silicon - Part A: Preparation and Structure 195 222 .
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B.W. Faughnan & J.J. Hanak. (1983) Photovoltaically active p layers of amorphous silicon. Journal of Non-Crystalline Solids 59-60, pages 1127-1130.
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Francesco Cramarossa & Capezzuto Pio. (1983) Deposition techniques and applications of amorphous silicon films. Materials Chemistry and Physics 9:1-3, pages 213-233.
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Y. Takano, T. Sato, N. Kitaoka & H. Ozaki. (1983) The effect of nitrogen doping on amorphous germanium. Journal of Non-Crystalline Solids 55:3, pages 325-333.
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B. W. Faughnan & J. J. Hanak. (1983) Photovoltaically active p layers of amorphous silicon . Applied Physics Letters 42:8, pages 722-724.
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Jeffrey A. Reimer & T. M. Duncan. (1983) Local bonding configuration of phosphorus in doped and compensated amorphous hydrogenated silicon. Physical Review B 27:8, pages 4895-4901.
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Kasturi Lal Chopra & Suhit Ranjan DasKasturi Lal Chopra & Suhit Ranjan Das. 1983. Thin Film Solar Cells. Thin Film Solar Cells 427 456 .
David V. Lang, J. David Cohen & James P. Harbison. (1982) Measurement of the density of gap states in hydrogenated amorphous silicon by space charge spectroscopy. Physical Review B 25:8, pages 5285-5320.
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S. Ahmed & D. Sigurd. (1982) Electrical Properties of Glow Discharge a-Si:H Thin Films Prepared with a RF Plasma Etch Unit. physica status solidi (a) 69:1, pages 305-314.
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M.M. Mandurah, K.C. Saraswat & T.I. Kamins. (1981) A model for conduction in polycrystalline silicon—Part I: Theory. IEEE Transactions on Electron Devices 28:10, pages 1163-1171.
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M. Toulemonde, P. Siffert, A. Deneuville & J. C. Bruyère. (1981) Interaction between arsenic, hydrogen, and silicon matrix in doping of sputtered amorphous hydrogenated silicon. Applied Physics Letters 39:2, pages 152-154.
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Isamu Shimizu, Shigeru Shirai & Eiichi Inoue. (1981) Photoreceptor of a -Si:H with diodelike structure for electrophotography . Journal of Applied Physics 52:4, pages 2776-2781.
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M. Dayan, N. Croitoru & Y. Lereah. (1981) Sputtered hydrogenated amorphous Si alloyed with Al. Physics Letters A 82:6, pages 306-308.
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D.E. Carlson. (1981) Amorphous silicon. Progress in Crystal Growth and Characterization 4:3, pages 173-193.
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I. Weitzel, R. Primig & K. Kempter. (1981) Preparation of glow discharge amorphous silicon for passivation layers. Thin Solid Films 75:2, pages 143-150.
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John D. Joannopoulos & Douglas C. Allan. 1981. Festkörperprobleme 21. Festkörperprobleme 21 167 190 .
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D.E. Carlson. (1980) Recent developments in amorphous silicon solar cells. Solar Energy Materials 3:4, pages 503-518.
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M.G Thompson & D.K Reinhard. (1980) Modification of amorphous hydrogenated silicon by co-sputtered aluminum. Journal of Non-Crystalline Solids 37:3, pages 325-333.
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Zimmer S. Jan, Richard H. Bube & John C. Knights. (1980) Field effect and thermoelectric power on boron doped amorphous silicon. Journal of Applied Physics 51:6, pages 3278-3281.
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G.G. Roberts, N. Apsley & R.W. Munn. (1980) Temperature dependent electronic conduction in semiconductors. Physics Reports 60:2, pages 59-150.
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V. Šmíd & H. Fritzsche. (1980) Hydrogenated chalcogenide glasses As2−xSe3+x and As2−xS3+x prepared by plasma decomposition. Solid State Communications 33:7, pages 735-738.
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H. Fritzsche, M. Tanielian, C. C. Tsai & P. J. Gaczi. (1979) Hydrogen content and density of plasma‐deposited amorphous silicon‐hydrogen. Journal of Applied Physics 50:5, pages 3366-3369.
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G. Lucovsky, R. J. Nemanich & J. C. Knights. (1979) Structural interpretation of the vibrational spectra of -Si: H alloys . Physical Review B 19:4, pages 2064-2073.
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C. C. Tsai. (1979) Characterization of amorphous semiconducting silicon-boron alloys prepared by plasma decomposition. Physical Review B 19:4, pages 2041-2055.
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C.C. Tsai & H. Fritzsche. (1979) Effect of annealing on the optical properties of plasma deposited amorphous hydrogenated silicon. Solar Energy Materials 1:1-2, pages 29-42.
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J.C. Knights, G. Lucovsky & R.J. Nemanich. (1979) Defects in plasma-deposited a-Si: H. Journal of Non-Crystalline Solids 32:1-3, pages 393-403.
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Zimmer S. Jan, Richard H. Bube & John C. Knights. (1979) Field effect and thermoelectric power on arsenic-doped amorphous silicon. Journal of Electronic Materials 8:1, pages 47-56.
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J. J. Hanak, V. Korsun & J. P. Pellicane. 1979. 2nd E.C. Photovoltaic Solar Energy Conference. 2nd E.C. Photovoltaic Solar Energy Conference 270 277 .
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T.M Hayes. (1978) EXAFS studies of disordered solids. Journal of Non-Crystalline Solids 31:1-2, pages 57-79.
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J. C. Knights & R. A. Lujan. (1978) Plasma deposition of GaP and GaN. Journal of Applied Physics 49:3, pages 1291-1293.
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H. Okamoto & Y. Hamakawa. (1977) Electronic behaviors of the gap states in amorphous semiconductors. Solid State Communications 24:1, pages 23-27.
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J. C. Knights, T. M. Hayes & J. C. Mikkelsen. (1977) Coordination of Arsenic Impurities in Amorphous Silicon-Hydrogen Alloys. Physical Review Letters 39:11, pages 712-715.
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J.C. Knights, D.K. Biegelsen & I. Solomon. (1977) Optically induced electron spin resonance in doped amorphous silicon. Solid State Communications 22:2, pages 133-137.
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J.C. Knights & J.E. Mahan. (1977) Optical and electrical properties of amorphous arsenic. Solid State Communications 21:10, pages 983-986.
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