Optical and electrical properties of GaZnO films deposited by co-sputtering method on two types of substrates

ABSTRACT

Gallium zinc oxide GaZnO (GZO) thin films are deposited on silica glass and quartz substrates using DC power and RF power on ZnO and GaO targets, respectively. Structural characteristics are investigated using X-ray diffraction XRD, optical parameters such as refractive index n, optical energy gap E_op and dispersion parameters in addition to the electrical property are investigated for all considered films. The optical properties reveal that GZO films have high transmittance (70–98%) and a low absorption coefficient in the visible range of the spectra. The optical band gap was found to increase from 3.28 to 3.44 eV with increasing the RF power on GaO target. The dielectric constant of GZO was found to be larger than the dielectric loss and has high optical conductivity (≈10¹⁵S⁻¹), The VELF and SELF values of GZO films are calculated and investigated.

KEYWORDS:

• Co-sputtering method
• GaZnO
• thin films
• refractive index
• energy band gap
• dispersion energies
• optical and electrical conductivities

Disclosure statement

No potential conflict of interest was reported by the author(s).