The cationic interstitials induced resistive switching: a case study on Mn-doped SnO₂

Abstract

This work has explored the possible defects in Mn-doped SnO₂ and compared the effects of interstitial Mn and oxygen vacancies on the electronic structure of SnO₂. Combining the DFT calculations and experimental measurements, we found that when the Mn-doped SnO₂ is synthesised under Sn-rich or O-poor conditions, the defect pair of Mn substitution and interstitial rather than oxygen vacancy will be formed, which induces energy band across the Fermi level and significantly affects the electronic structure of SnO₂. With the Mn interstitials, stable intrinsic multi-level resistive states and optical SET can be achieved in the Mn-doped SnO₂ memristors. This result can provide guidance in the fabrications of defective metal oxides and promote the investigations on cationic interstitial triggered multi-level resistive switching and optoelectronic memristors.

KEYWORDS:

• Tin oxide
• defects
• cationic interstitials

Disclosure statement

No potential conflict of interest was reported by the author(s).

Additional information

Funding

Z. Xu acknowledges financial support from the Beijing Technology and Business University [grant number 19005902140]. P. Guan would like to thank the financial support from the Research Training Program (RTP) funded by the Department of Education, Australia.