Homoepitaxial and Characterization of GaSb Thin Films by Molecular Beam Epitaxy

Abstract

Molecular Beam Epitaxy (MBE) was used to grow GaSb thin films on GaSb substrates. We have obtained the optimized growth condition to improve films quality and the surface morphology of GaSb epilayer during growth. Two group samples were tested to study the influence of the growth rate and the V/III flux ratios on the crystal quality. It caused fewer defects when the growth rate of approximately was fixed 0.6 ML/s. And the surface morphology and performance was best for GaSb epilayer when the beam ratio was 5. The thin films were characterized by Atomic Force Microscopy (AFM) and high-resolution X-Ray Diffraction (XRD). The root means square roughness of the superlattice surface was only 0.335 nm. The full width at half maximum of the rocking curve was 39.6 arcsec and the emission wavelength of photoluminescence was 1.99 μm.

Keywords:

• Homoepitaxial
• molecular beam epitaxy
• GaSb films
• growth rate
• V/ III flux

Additional information

Funding

This work was supported by the National Natural Science Foundation of China (61574022, 61674021, 11674038, 61704011), the China Postdoctoral Science Foundation funded project (2019M652176, 2019M661680), the Foundation of the State Key Laboratory of High Power Semiconductor Lasers, the Developing Project of Science and Technology of Jilin Province (20200301052RQ, 20180519017JH, 20180520177JH) and the Shenzhen Fundamental Research Fund (JCYJ20180307151538972), and Guangdong Basic and Applied Basic Research Foundation (2020A1515010868).