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Integrated Ferroelectrics
An International Journal
Volume 209, 2020 - Issue 1: Proceedings of the Eighteenth China International Nanoscience and Techology Symposium (CINSTS19), Part IV of V
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Articles

Homoepitaxial and Characterization of GaSb Thin Films by Molecular Beam Epitaxy

Chenglin LiState Key Laboratory of High-Power Semiconductor Laser, Changchun University of Science and Technology, Changchun, P.R. China; ;School of Applied Sciences, Jilin Engineering Normal University, Changchun, P.R. China; View further author information
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Dan FangState Key Laboratory of High-Power Semiconductor Laser, Changchun University of Science and Technology, Changchun, P.R. China; Correspondence[email protected] [email protected]
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Kaihui GuSchool of Applied Sciences, Jilin Engineering Normal University, Changchun, P.R. China; ;Jilin Engineering Laboratory for Quantum Information Technology, Changchun, P.R. China; Correspondence[email protected] [email protected]
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Dong LvOffice of Admissions and Career Development, Southwest Jiaotong University, Chengdu, P.R. China; View further author information
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Xuan FangState Key Laboratory of High-Power Semiconductor Laser, Changchun University of Science and Technology, Changchun, P.R. China; ;School of Science and Engineering, The Chinese University of Hong Kong, Shenzhen, P.R. ChinaView further author information
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Jilong TangState Key Laboratory of High-Power Semiconductor Laser, Changchun University of Science and Technology, Changchun, P.R. China; View further author information
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Dengkui WangState Key Laboratory of High-Power Semiconductor Laser, Changchun University of Science and Technology, Changchun, P.R. China; View further author information
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Fengyuan LinState Key Laboratory of High-Power Semiconductor Laser, Changchun University of Science and Technology, Changchun, P.R. China; View further author information
&
Xiaohua WangState Key Laboratory of High-Power Semiconductor Laser, Changchun University of Science and Technology, Changchun, P.R. China; View further author information
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Pages 162-170 | Received 28 Sep 2019, Accepted 03 Feb 2020, Published online: 01 Jul 2020

References

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