Recent progress in perovskite-based photodetectors: the design of materials and structures

Figures & data

Figure 1. (a) Device schematic diagram. (b) The energy level diagram of the CsPbBr₃-PC₇₁BM bilayer photodetector under the illumination of hν > 2.3 eV. Photodetector performances of EQE (c) and photodetectivity (d) with the relationship of light irradiance, respectively [33]. Copyright from 2018 Chem. Phys. Lett.

Figure 2. (a) Schematic illustration of the VGHP photodetectors. (b) Responsivity and detectivity of the reference and VGHP photodetectors [35]. Copyright from 2018 ACS Nano. (c) The SEM image of the nanowires and time response behavior of reversible on/off switching for HPNW-based photodetectors. (d) The detectivity performance of HPNW-based photodetectors fabricated with PbI₂ molar ratios of 0.4 M and 0.8 M devices [46]. Copyright from 2018 Nano Energy. (e) Schematic illustration of CH₃NH₃PbI₃ NW array photodetector. (f) Plots of responsivity and photoconductive gain of the photodetector as a function of light wavelength [49]. Copyright from 2017 Nano Lett.

Figure 3. (a) Schematic of a 2D CH₃NH₃PbI₃ platelet phototransistor. The upright inset showed the optical microscopy image of the 2D CH₃NH₃PbI₃ platelet phototransistor. (b) Dependence of photocurrent and photoresponsivity on incident light power, the blue and black dots correspond to original data [55]. Copyright from 2018 Nanomaterials. (c) Schematic image of the CH₃NH₃PbI₃ vertical structure photodetector looking through the back side of the glass substrate. (d) The band alignment for the ITO/perovskite/Au vertical heterostructure [56]. Copyright from 2017 J. Phys. D. (e) Schematic illustration of the mechanism of perovskite nanonet photodetector. (f) I–t curves of the CH₃NH₃PbI₃ photodetectors based on nanonet and compact film illuminated under monochromatic light at 700 nm [57]. Copyright from 2017 Adv. Funct. Mater.

Figure 4. (a) Photocurrent spectra of different SWCNT/PbS-QDs hybrid devices made with QDs of different sizes, showing the responses in the NIR which can be tuned by varying the PbS-QDs size. (b) Comparison between the photocurrent and the corresponding responsivity of the SWCNT/MAPbI_3-xCl_x hybrid and of the SWCNT/PbS-QDs/MAPbI_3-xCl_x hybrid photodetectors as a function of the illumination power of a 980 nm laser. (c) Responsivity and photoconductive gain of the SWCNT/PbS-QDs/MAPbI_3-xCl_x hybrid fabricated with PbS-QDs of 4.95 nm diameter measured with lamp power 10 times at 1 V [59]. Copyright from 2018 Nanoscale. (d) Schematic diagram of energy levels of the CsPbBr₃:ZnO photodetectors. (e) I–V curves of CsPbBr₃:ZnO photodetectors. Insets showed the zoomed-in areas. (f) Photoresponse of the CsPbBr₃:ZnO devices with external bias [60]. Copyright from 2017 Sol. Energ. Mat. Sol. C.

Figure 5. (a) Schematic of the working mechanism of perovskite and carbon nanotubes composites in photodetector [64]. Copyright from 2018 Organic Electronics. (b) Energy level of CsPbBr₃ nanosheets and CNTs. Simplified circuit diagrams of the pristine CsPbBr₃ nanosheet PDs and the hybrid PDs [65]. Copyright from 2017 ACS Nano. (c) Photocurrent spectra of different SWCNT/MAPbI_3−xCl_x hybrid devices made with various densities of SWCNT. (d) Responsivity and photoconductive gain spectra of the best device [67]. Copyright from 2017 Sci. Rep. (e) The energy-level diagram of photodetector device [68]. Copyright from 2018 Adv. Mater. (f) Schematic of ZnO nanofiber and perovskite hybrid photodetectors and the band energy alignment between ZnO and perovskite [76]. Copyright from 2017 Nano Research.

Figure 6. (a) Device structure of the perovskite photodetector, and insets showed the chemical structures of the PCBM and F4-TCNQ. (b) The energy levels distribution and the carrier transport characteristics of the device under illumination [85]. Copyright from 2018 Adv. Optical Mater. (c) Schematic configuration of CH₃NH₃PbI₃/C8BTBT heterojunction photodetector. Inset showed the molecular structure of C8BTBT. (d) Responsivity of C8BTBT, CH₃NH₃PbI₃, and CH₃NH₃PbI₃/C8BTBT heterojunction photodetectors as a function of the light wavelength, in which the data were measured at a bias of 10 V. The responsivity was an average value of five photodetector devices [88]. Copyright from 2017 Adv. Electron. Mater. (e) The EQE spectra of devices and the schematic morphologies of the infrared absorption layer and charge carrier transportation for devices, respectively [89]. Copyright from 2017 Adv. Optical Mater. (f) Schematics of MAPbI₃/Fullerenes photodetector and the energy diagram of each layer in devices [90]. Copyright from 2017 12^th IEEE.

Figure 7. (a) Band diagrams of the CH₃NH₃PbI₃/Si and CH₃NH₃PbI₃/TiO₂/Si samples. (b) The dark current and light current as a function of applied voltage: the CH₃NH₃PbI₃/Si and CH₃NH₃PbI₃/TiO₂/Si photodetectors [93]. Copyright from 2018 Mater. Chem. Front. (c) I–V curves of the photodetectors with different SnO₂ layer under illumination. Inset: device structure of the photodetectors (upper) and work mechanism of the heterojunction photodetectors (lower) [94]. Copyright from 2018 Organic Electronics. (d) PL spectra of the CsPbBr₃ and CsPbBr₃/ZnO films. The inset schematically represented the charge transfer at the CsPbBr₃/ZnO interface under light illumination. The band profiles and working mechanisms of (d) the CsPbBr₃/ZnO heterostructure photodetector were also shown [96]. Copyright from 2017 J. Mater. Chem. C.

Figure 8. (a) Schematic structure and optoelectronic characteristics of the vertical structure MoS₂/CH₃NH₃Pb₃ photodetector. The effects of drain biased and illumination on carrier transportation and separation under (b) dark and (c) under illumination based on the diagram of the MoS₂/CH₃NH₃Pb₃ vertical photoconductor [80]. Copyright from 2018 Adv. Mater. Interfaces. The photoresponsivity of the planar (d) and vertical (e) photodetectors based on a 2D CH₃NH₃PbI₃ perovskite nanosheets. Incident light: 635 nm [56]. Copyright from 2017 J. Phys. D. (f) Energy diagram of the perovskite photodetector composed of ITO/PEDOT:PSS/CH₃NH₃PbI_xCl_3-x/PC₆₀BM/Zr–TiO_x/Al [99]. Copyright from 2018 RSC Adv.

Figure 9. Schematics of (left) planar and (right) vertical device for in-plane and out-of-plane transport measurements, respectively. Comparison of in-plane and out-of-plane (b) mobility and (c) electrical conductance with regard to the n in (C₄H₉NH₃)_n(CH₃NH₃)_n-1Pb_nI_3n+1 quasi-2D perovskite SCMs [100]. Copyright from 2018 ACS Nano. (d) Schematic structure and optoelectronic characteristics of the planar structure MoS₂/CH₃NH₃Pb₃ photodetector. (e) Energy band diagram of the MoS₂/CH₃NH₃Pb₃ planar photoconductor under dark and under illumination. (f) Power-dependent peculiarity of photocurrent for planar structure. The photoexcited current increased gradually and the responsivity reduced accordingly with increasing the light intensity [80]. Copyright from 2018 Adv. Mater. Interfaces.

Table 1. The comparison of the key parameters for perovskite-based photodetectors.

Device structure type	Responsivity (R) @Vbias (light source)	Detectivity (D*) @Vbias (light source)	EQE (%)	On/off ratio	Spectral range (nm)	Response time	Ref.
Au/0D CsPbBr3/PC71BM/Au Planar	1.72 AW^−1 @ 2V (405 nm)	1.76 × 10^7 Jones @ 2V (405 nm)	530			1 ms	33
ITO/NH3PbI3 VGHP/ITO Planar	1 AW^−1 @ 50V (520 nm)	5 × 10^9 Jones @ 50V (520 nm)				3.3 ns/43.5 ns	35
FTO/MAPbI3-x(SCN)x NW network/FTO Planar	0.23 AW^−1 @ 2V (490 nm)	7.1x10^11 Jones @ 2V (490 nm)				53.2 μs/50.2 μs	46
Al/Ca/NH3Pb(I1−xBrx)3 NW arrays/Al/Ca Planar	12,500 AW^−1 @ 5V (550 nm)	1.73 × 10^11 Jones @ 5V (550 nm)			370–780	0.34 μs/0.42 μs	49
Au/CH3NH3PbI3 platelets/Au Planar	8.3 AW^− 1 @ 1V (405 nm)			~10^3		30 ms/50 ms	55
Au/CH3NH3PbI3 nanosheets/ITO Vertical	36 mA W^−1 @ 1V (635 nm)					320 ms/330 ms	56
Au/CH3NH3PbI3 nanosheets/Au Planar	0.5 mA W^−1 @ 1V (635 nm)					230 ms/190 ms	56
FTO/CH3NH3PbI3 nanonets arrays/FTO Planar	10.33 AW^−1 @ 10V (700 nm)					0.02 ms/0.01 ms	57
ITO/SWWCNT/PbS-QDs/MAPbI3-xClx/ITO Planar	0.5 AW^−1 @ 1V (500 nm)	1.4 x 10^11 Jones @ 1V (500 nm)			300–1500	<250 μs	59
Ag/CsPbBr3:ZnO/ITO Vertical	11.5 mAW^−1 @ 0V			12.86		0.409 s/0.0179 s	60
ITO/CH3NH3PbBrx/CNTs/ITO Planar				10^3			64
ITO/CsPbBr3 nanosheet/CNTs/ITO Planar	31.1 AW^−1 @ 10V		7488			16 μs/0.38 ms	65
Ag/SWCNT/MAPbI3−xClx/Ag Planar	13.8 AW^−1 @ 10V (500 nm)				300–800	10 ms	67
C/TiO2/CuO/Cu2O/Cu Vertical	562.9 mAW^−1 @ 0V (800 nm)	2.15 x 10^13 Jones @ 0V (800 nm)		562.9	350–1050	<200 ms	68
Metal/Gd-doped ZnO NRs/CH3NH3PbI3/ITO Vertical	28 AW^−1 @ 2V (white light)	1.1 × 10^12 Jones @ 2V (white light)			250−1357	0.4 s/0.5 s	73
ITO/Gd-doped ZnO NRs/CH3NH3PbI3/ITO Planar	0.67 AW^−1 @ 1V (740 nm)	1.4 × 10^13 Jones @ 1V (740 nm)		2800		0.2 s	76
Au/MoS2/CH3NH3PbI3/Au Vertical	68.11 AW^−1 @ 1V			1522		205 ms/206 ms	80
Au/MoS2/CH3NH3PbI3/Au Planar	28 AW^−1 @ 1V			1476		356 ms/204 ms	80
Ti/Au/2D CH3NH3PbI3/grapheme/Ti/Au Planar	61.2 AW^−1 @ 1V (405 nm)			4.28 × 10^3		130 ms/290 ms	81
Au/BCP/PCBM:F4-TCNQ/CH3NH3PbI3/PEDOT/ITO Vertical	260 AW^−1 @ −1V (532 nm)	8.1 × 10^14 Jones @ −1V (532 nm)	6.26 × 10^4			9 μs/27μs	85
Au/C8BTBT/CH3NH3PbI3/Au Planar	24.8 AW^−1 @ 10V (532 nm)			2.4 × 10^4			88
Al/PDPP3T:PC71BM/CH3NH3PbI3/PEDOT/ITO Vertical		3 × 10^13 Jones @ −0.1V (850 nm)	80		350−950		89
Au/PC61BM/CH3NH3PbI3/Au Planar	57.6 mA W^−1 @ 5V (500 nm)			49			90
Ag/CH3NH3PbI3/TiO2/Ag Planar	62.5 A W^−1 @ 10V (white light)	4.85 × 10^13 Jones @ 10V (white light)		6 × 10^3	350−1100		93
Au/CH3NH3PbI3/SnO2/Au Planar	1.65 AW^−1 @ 1V (705 nm)	10^12 Jones @ 1V (705 nm)				10 ms	94
Au/MeOTAD/(FAPbI3)1-x(MAPbBr3)x/SnO2/ITO Vertical		10^12 Jones @ −0.5V (450 nm)		10^5		3 μs/6 μs	95
Au/CsPbBr3/ZnO/Au Planar	4.25 AW^−1 @ 10V (450 nm)			>10^4		210 μs	96
Al/Zr–TiOx/PC60BM/CH3NH3PbIxCl3-xPEDOT:PSS/ITO Vertical		1.37 × 10^13 Jones @ −0.1V (525 nm)		90			99
Au/2D perovskite/Au Planar		2.1 × 10^13 Jones @ 0.4V (550 nm)		~10^4			100

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