High-speed on-chip light sources at the nanoscale

Figures & data

Figure 1. (a) Electrically pumped single-mode photonic crystal nano-cavity LED, reprinted from ref [26] with permission; (b) Waveguide-coupled metallic nano-pillar LED on silicon, reprinted from ref [8]; (c) Bowtie nano-antenna produces large single-molecule fluorescence enhancements, reprinted from ref [30] with permission; (d) Plasmon nano-antenna arrays enhances light emission rate from InP MQW, reprinted from ref [31] with permission.

Figure 2. Theoretically predicted modulation bandwidth of nanoLEDs and nanolasers, reprinted from ref [22] with permission. (a) Bulk; (b) Quantum well. The maximum modulation bandwidth is shown as a function of Q factor and the normalized effective modal volume. The color bars show the scale of modulation bandwidth with unit of GHz.

Figure 3. (a) Cross-sectional view shows the structure and material stack of the electrically pumped cavity-backed slot antenna-coupled LED; (b) Top-view of the antenna-coupled LED showing extremely confined electromagnetic energy within the slot; (c) SEM picture of the fabrication antenna-coupled LED, reprinted from ref [23] with permission.

Figure 4. (a) Cross-sectional view, top-view and Purcell factor of metal-coated nanocylinder cavity, reprinted from ref [42] with permission; (b) Schematic of nano-pillar LED on silicon substrate, calculated spontaneous emission power (coupled into the fundamental quasi-TE mode of the waveguide) as a function of the dipole wavelength, reprinted from ref [8] with permission.

Figure 5. Direct current modulation of laser, reprinted from ref [44] with permission.

Figure 6. Structure of the shifted-core coaxial nano-emitter, reprinted from ref [24] with permission. (a) 3D view. The SiO₂/InGaAsP/InP/SiO₂ stack forms a Fabry–Pérot cavity in the vertical direction. The Ag/InGaAsP/Ag structure forms a coaxial cavity in the horizontal direction. ‘d’ denotes core-shifting distance in the y direction. (b) Cross-sectional view.

Figure 7. (a) Q factor and resonant wavelength of the device as a function of the core-shifting distance. Inset: mode profile without shift (d = 0 nm) and at maximum shift (d = 110 nm). (b) Modulation bandwidth as a function of the core-shifting distance, reprinted from ref [24] with permission. Note that the Q factor, V_eff, Purcell factor and modulation bandwidth are all functions of the core shifting distance d.

Figure 8. Far-field emission pattern of the shifted core coaxial nano-cavity, reprinted from ref [24] with permission. (a) d = 0 nm; (b) d = 110 nm. Omni-directional emission can be changed to in-line bi-directional emission; (c) Evolution of emission directivity as a function of core-shifting distance.

Figure 9. Threshold energy consumption at 3 V applied voltage, as a function of core-shifting distance.

Figure 10. Energy output/bit for selected data rates and current levels.

Figure 11. Device energy efficiency for selected data rates and current bias levels, as a function of core-shifting distance.

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