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Ferroelectrics Volume 304, 2004 - Issue 1
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Original Articles

Temperature Coefficient of SAW Device on SiO2/Proton Exchanged LiNbO3 Substrate

CHIEN-CHUAN CHENG Department of Electronic Engineering De Lin Institute of Technology Tucheng, Taipei, Taiwan, R.O.C.
,
KUO-SHENG KAO Department of Electrical Engineering National Sun Yat-Sen University, Kaohsiung, Taiwan, R.O.C.
,
YING-CHUNG CHEN Department of Electrical Engineering National Sun Yat-Sen University, Kaohsiung, Taiwan, R.O.C.
&
CHUNG-JEN CHUNG Department of Electrical Engineering National Sun Yat-Sen University, Kaohsiung, Taiwan, R.O.C.
Pages 143-145 | Received 01 Aug 2003, Accepted 01 Jan 2004, Published online: 07 Sep 2010
 
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Abstract

Proton exchange (PE) is an attractive method for the fabrication of optical and acoustic waveguides in lithium niobate (LiNbO3). LiNbO3 substrate has large electromechanical coupling coefficient (K2) and moderate SAW velocity, but its temperature coefficient of frequency (TCF) is as large as -73 ppm/°C. Silicon dioxide (SiO2) is a well-known non-piezoelectric material having the positive TCF for SAW. The SiO2 thin films are deposited on the PE-LiNbO3 substrates to improve the TCF of the SAW devices. The results show that the temperature stability of SAW on SiO2/PE-LiNbO3 substrate is improved to be about -55 ppm/°C.

Acknowledgement

The National Science Council, the Republic of China, supported this research under contract no. NSC 91-2216-E-237-001 and NSC 90-2216-E-110-025.

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