Abstract
The (Na x K1− x )NbO3 (NKN) thin films were fabricated by using the alkoxide-based sol-gel method. The NKN stock solution was spin-coated onto a Pt/Ti/SiO2/Si substrate. The coating and drying procedures were repeated several times to obtain the film thickness of about 200 nm, and then the films were annealed at 550–700°C for 1 h. Structural properties of the NKN thin films were investigated by thermogravimetric analysis/differential scanning calorimetry, field emission scanning electron microscope and X-ray diffraction spectroscopy. The dielectric constant and the dielectric loss for the films sintered at 650°C were found to be 338 and 0.018, respectively. The results show that the NKN thin films are promising candidate for use in tunable devices application.
Acknowledgments
This work was supported by the Korea Research Foundation Grant funded by the Korean Government (MOEHRD)′ (KRF-2005-041-D00462).