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Ferroelectrics Volume 370, 2008 - Issue 1
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SECTION L: THIN FILMS AND SUPERLATTICES

Effect of Back-Etching on Electrical Properties of (001)&(100) Oriented PZT(30/70) Thin Films

Tomoya Ohno Electronic Ceramics Department, Jožef Stefan Institute, Jamova 39, SI-1000, Ljubljana, Slovenia; Department of Materials Science, Kitami Institute of Technology, 165, Kouen-cho Kitami, Japan, 090-8507
,
Babara Malič Electronic Ceramics Department, Jožef Stefan Institute, Jamova 39, SI-1000, Ljubljana, Slovenia
,
Marija Kosec Electronic Ceramics Department, Jožef Stefan Institute, Jamova 39, SI-1000, Ljubljana, Slovenia
,
Takeshi Matsuda Department of Materials Science, Kitami Institute of Technology, 165, Kouen-cho Kitami, Japan, 090-8507
,
Naoki Wakiya Graduate School of Science and Technology, Shizuoka University, 3-5-1, Johoku Hamamatsu Shizuoka, Japan, 432-8561
&
Hisao Suzuki Graduate School of Science and Technology, Shizuoka University, 3-5-1, Johoku Hamamatsu Shizuoka, Japan, 432-8561
Pages 119-125 | Received 28 Aug 2007, Published online: 20 Sep 2010
 
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Abstract

This paper focuses on the effect of back-etching on the electrical properties in (001)&(100) oriented Pb(Zr 0.3 Ti 0.7 )O 3 (PZT30) thin films. The PZT30 thin films were deposited by chemical solution deposition (CSD) on a Pt/Ti/SiO 2 /Si substrate with different back-etching depth. The back-etching depth was controlled by changing the etching time in the range from 287 μ m to 98 μ m (residual Si thickness; T Si = 13–202 μ m). The residual stress in PZT30 thin film was estimated at the back etched part and the un-etched part by Raman analysis. In addition, the dielectric and ferroelectric properties in PZT30 thin film were measured to estimate the effect of the back-etching depth on the electrical properties.

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