ABSTRACT
Randomly oriented Sr0.75Ba0.25Nb2O6 thin films have been deposited on Pt(111)/Ti/SiO2/Si substrates using a polymeric chemical method to study their physical properties. Refinements of the structure confirm the stoichiometry of the studied films. The relaxor behavior is evidenced by the dielectric measurements and Vögel-Fulcher analysis of the dielectric curves. Lowering the transition temperature (Tm) by about 100 K and asymmetries in the local hysteresis loops well above Tm are discussed in terms of the existence of complex defects in thin films.
Acknowledgments
The equipment of the Ural Center for Shared Use “Modern nanotechnology” UrFU was used.
Funding
We would like to express our gratitude to the Brazilian agencies FAPESP (Projects 2010/16504-0 and 2007/08534-3) and CNPq (Research grant 305973/2012–6 and Project 400677/2014–8) for their financial support. This work was also developed in the scope of the project CICECO – Aveiro Institute of Materials (Ref. FCT UID/CTM/50011/2013), financed by national funds through the FCT/MEC and when applicable co-financed by FEDER under the PT2020 Partnership Agreement. The research was made possible in part by the Ministry of Education and Science of the Russian Federation (UID RFMEFI59414X0011) by Government of the Russian Federation (Act 211, Agreement 02.A03.21.0006).