Abstract
The question of the applicability of the scanning capacitive microscopy method for the composite mapping of ferroelectric crystals with the growth periodic structure TGS – TGS + Cr is considered. Contrast images of nominally pure stripes and impurity ones with concentration of Cr+3 ∼0.08 wt% were obtained. Volt-ampere characteristics were measured, which revealed current increase in the impurity stripes in 1.5–3 times. It was shown that capacitive contrast was formed in the stripes with a gradient of impurity concentration and at the domain boundaries.